US4205263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature compensated constant current MOS field effective transistor circuit
Assignee: Toshiba Corp
•
Filing: 1977-08-02
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Granted: 1980-05-27
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Expires: 1997-08-02
Abstract
Abstract There is provided a MOS field effect transistor circuit comprising a negative power terminal, an N-channel type field effect transistor with the substrate coupled to the negative power terminal, a diode coupled in the forward direction between the negative power terminal and the gate of the N-channel type field effect transistor, and a high-resistance resistor coupled between the junction of the diode and the gate of the N-channel type field effect transistor and an earth terminal. The variation in the threshold voltage of the N-channel type field effect transistor owing to temperature change is compensated by variation in the forward voltage of diode with the temperature change to keep constant the voltage applied to the gate of the field effect transistor, thereby securing the constant current property of the field effect transistor for temperature change.
Inventors
- 👤 Kenji Kawagai
- 👤 Shigeki Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:20
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/245
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
116 words
A MOS field effect transistor circuit comprising a first and a second power terminal, a MOS field effect transistor, a unidirectional circuit element coupled in the forward direction between the gate of said MOS field effect transistor and said first power terminal, a high-resistance element coupled between the junction of said unidirectional circuit element and the gate of said MOS field effect transistor and said second power terminal; said MOS field effect transistor circuit further comprising a voltage-dividing circuit coupled between said first and second power terminals, and a switching element coupled between said MOS field effect transistor and said second power terminal, said switching element being controlled by a voltage divided by said voltage-dividing circuit.
Claim 2
Dependent Claim
116 words
A MOS field effect transistor circuit comprising a first and a second power terminal, a MOS field effect transistor, a unidirectional circuit element coupled in the forward direction between the gate of said MOS field effect transistor and said first power terminal, a high-resistance element coupled between the junction of said unidirectional circuit element and the gate of said MOS field effect transistor and said second power terminal; said MOS field effect transistor circuit further comprising a voltage-dividing circuit coupled between said first and second power terminals, and a switching element coupled between said MOS field effect transistor and said second power terminal, said switching element being controlled by a voltage divided by said voltage-dividing circuit.
Claim 3
Dependent Claim
43 words
A MOS field effect transistor circuit according to claim 1, wherein said switching element is a MOS field effect transistor whose gate is connected to receive the divided voltage from said voltage-dividing circuit, and whose substrate is coupled to said second power terminal.
Claim 4
Dependent Claim
21 words
A MOS field effect transistor circuit according to claim 1, wherein said high resistance element comprises an MOS field effect transistor.
Claim 5
Dependent Claim
22 words
A MOS field effect transistor circuit according to claim 1, wherein said voltage-dividing circuit includes first and second resistive means serially connected.
Claim 6
Dependent Claim
33 words
A MOS field effect transistor circuit according to claim 4, wherein said first resistive means is formed of a variable resistor and said second resistive means is formed of a field effect transistor.
Claim 7
Dependent Claim
42 words
A MOS field effect transistor circuit according to claim 1, wherein said voltage-dividing circuit is formed of a variable resistor and a field effect transistor connected serially to each other and said high resistance element is formed of a field effect transistor.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-27 | 1983-11-26 | 1984-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-27 | 1987-11-26 | 1988-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-27 | 1991-11-26 | 1992-05-27 | $7700.00 | Window Closed / Lapsed |