US4216574A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge coupled device
Assignee: Raytheon Co
•
Filing: 1978-06-29
•
Granted: 1980-08-12
•
Expires: 1998-06-29
Abstract
Abstract A two-phase buried-channel charge coupled device wherein a doped layer of first type conductivity is formed with a predetermined doping concentration under a surface of a semiconductor body of second type conductivity. A first plurality of electrodes is formed in spaced relationship on the surface over the doped layer. Particles generating the first type conductivity are ion implanted into regions of the doped layer between the first plurality of electrodes, increasing the doping concentration of the portion of the doped layer disposed beneath such spaced regions. A second plurality of electrodes is formed over the increased concentration portions of the doped layer. The first plurality of electrodes provides the transfer gates of the device and the second plurality of electrodes provides the storage gates for the device.
Inventors
- 👤 Wolfgang M. Feist
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 21:01
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D44/464; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A method comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming a first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes; and (e) forming a second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
Claim 2
Independent Claim
180 words
A method comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming a first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes; and (e) forming a second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
Claim 3
Dependent Claim
19 words
The method recited in claim 1 wherein both ion implantation steps are performed using substantially the same energy levels.
Claim 4
Dependent Claim
19 words
The method recited in claim 1 wherein both ion implantation steps implant the particles with substantially the same dosages.
Claim 5
Independent Claim
226 words
A method comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity with a predetermined dosage and with a predetermined energy level into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming a first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity with substantially the predetermined dosage and with substantially the predetermined energy level through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes, increasing the doping concentration of said corresponding spaced regions of the doped layer beneath the spaced regions of the first plurality of gate electrodes; and (e) forming a second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
Claim 6
Independent Claim
226 words
A method comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity with a predetermined dosage and with a predetermined energy level into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming a first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity with substantially the predetermined dosage and with substantially the predetermined energy level through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes, increasing the doping concentration of said corresponding spaced regions of the doped layer beneath the spaced regions of the first plurality of gate electrodes; and (e) forming a second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
Claim 7
Independent Claim
259 words
A method for forming a charge coupled device having a first plurality of electrically interconnected gate electrodes and a second plurality of electrically interconnected gate electrodes disposed between a source electrode and a drain electrode, comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity with a predetermined dosage and with a predetermined energy level into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming the first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity with substantially the predetermined dosage and with substantially the predetermined energy level through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes, increasing the doping concentration of said corresponding spaced regions of the doped layer beneath the spaced regions of the first plurality of gate electrodes; and (e) forming the second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
Claim 8
Independent Claim
259 words
A method for forming a charge coupled device having a first plurality of electrically interconnected gate electrodes and a second plurality of electrically interconnected gate electrodes disposed between a source electrode and a drain electrode, comprising the steps of: (a) forming an insulating layer with uniform thickness over a surface of a semiconductor body, such semiconductor body having a first type conductivity; (b) ion implanting particles generating a second type conductivity with a predetermined dosage and with a predetermined energy level into the semiconductor body through the insulating layer forming a doped layer of predetermined doping concentration in the semiconductor body, such second type conductivity being opposite to the first type conductivity of the semiconductor body; (c) forming the first plurality of gate electrodes in spaced relationship on the insulating layer and over the doped layer; (d) ion implanting particles generating the second type conductivity with substantially the predetermined dosage and with substantially the predetermined energy level through portions of the insulating layer disposed between spaced regions of the first plurality of gate electrodes into corresponding spaced regions of the doped layer disposed beneath the spaced regions of the first plurality of gate electrodes, increasing the doping concentration of said corresponding spaced regions of the doped layer beneath the spaced regions of the first plurality of gate electrodes; and (e) forming the second plurality of gate electrodes on the portions of the insulating layer disposed between the spaced regions of the first plurality of gate electrodes and over the spaced regions of the doped layer having increased doping concentrations.
References Cited (Backward Citations)
US3950188A
Cited
US4062699A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-12 | 1984-02-11 | 1984-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-12 | 1988-02-11 | 1988-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-12 | 1992-02-11 | 1992-08-12 | $7700.00 | Window Closed / Lapsed |