Reduction of sparkle noise and mottling in CCD imagers

Claim 2

A charge-coupled device (CCD) imager comprising: a semiconductor substrate; a single layer electrode structure lying over and insulated from one surface of said substrate, said structure comprising semiconductor electrodes of one conductivity type spaced from one another by semiconductor "gaps" of opposite conductivity type; means for controlling, at a desired level, greater than zero, the conduction of current through the gaps comprising a control electrode lying over the surface of and insulated from the single layer electrode structure, said control electrode covering both the electrodes and gaps; and means for applying a control voltage to said control electrode of a sense and amplitude to produce current flow at said desired level through said gaps during operation of said imager, said means for applying a control voltage comprising means for applying a DC level, open-loop fashion.

Claim 3

A charge-coupled device (CCD) imager comprising: a semiconductor substrate; a single layer electrode structure lying over and insulated from one surface of said substrate, said structure comprising semiconductor electrodes of one conductivity type spaced from one another by semiconductor "gaps" of opposite conductivity type; means for controlling, at a desired level, greater than zero, the conduction of current through the gaps comprising a control electrode lying over the surface of and insulated from the single layer electrode structure, said control electrode covering both the electrodes and gaps; and means for applying a control voltage to said control electrode of a sense and amplitude to produce current flow at said desired level through said gaps during operation of said imager, said means for applying a control voltage comprising feedback circuit means for supplying said control voltage at a controllable level such as to maintain said conduction of current through the gaps at a substantially constant level over a relatively wide temperature range.

Claim 4

A charge-coupled device (CCD) imager comprising: a semiconductor substrate; a single layer electrode structure lying over and insulated from one surface of said substrate, said structure comprising semiconductor electrodes of one conductivity type spaced from one another by semiconductor "gaps" of opposite conductivity type; means for controlling, at a desired level, greater than zero, the conduction of current through the gaps comprising a control electrode lying over the surface of and insulated from the single layer electrode structure, said control electrode covering both the electrodes and gaps; and means for applying a control voltage to said control electrode of a sense and amplitude to produce current flow at said desired level through said gaps during operation of said imager, said means for applying a control voltage comprising feedback circuit means for supplying said control voltage at a controllable level such as to maintain said conduction of current through the gaps at a substantially constant level over a relatively wide temperature range.

Claim 5

A charge-coupled device (CCD) imager comprising: a semiconductor substrate; a single layer electrode structure lying over and insulated from one surface of said substrate, said structure comprising semiconductor electrodes of one conductivity type spaced from one another by semiconductor "gaps" of opposite conductivity type; means for controlling, at a desired level, greater than zero, the conduction of current through the gaps comprising a control electrode lying over the surface of and insulated from the single layer electrode structure, said control electrode covering both the electrodes and gaps; and means for applying a control voltage to said control electrode of a sense and amplitude to produce current flow at said desired level through said gaps during operation of said imager, said means for applying a control voltage comprising: means for sensing the conduction of current through at least one of said gaps; and means responsive to any tendency of said current to change from said desired value for varying the value of said control voltage in a sense and amount to return the flow of said current through said at least one gap to said desired value.

Claim 6

A charge-coupled device (CCD) imager comprising: a semiconductor substrate; a single layer electrode structure lying over and insulated from one surface of said substrate, said structure comprising semiconductor electrodes of one conductivity type spaced from one another by semiconductor "gaps" of opposite conductivity type; means for controlling, at a desired level, greater than zero, the conduction of current through the gaps comprising a control electrode lying over the surface of and insulated from the single layer electrode structure, said control electrode covering both the electrodes and gaps; and means for applying a control voltage to said control electrode of a sense and amplitude to produce current flow at said desired level through said gaps during operation of said imager, said means for applying a control voltage comprising: means for sensing the conduction of current through at least one of said gaps; and means responsive to any tendency of said current to change from said desired value for varying the value of said control voltage in a sense and amount to return the flow of said current through said at least one gap to said desired value.

Claim 7

In a charge-coupled device (CCD) imager of the field-transfer type comprising: a CCD A register including a substrate formed with channels extending in a column direction, the opposite edges of each channel being defined by potential barriers in the substrate for confining any charge which may be present in a channel to the channel, said A register also having electrodes extending in a row direction substantially orthogonal to said column direction, over said channels, responsive to applied voltages for the storage in and transfer of charges along said channels, said register for producing and storing charge signals in response to a radiation image projected onto said register; a CCD B register coupled to the A register and into which a field of charge signals from said A register may be shifted for temporary storage in said B register, said B register including a substrate formed with channels aligned with corresponding channels of the A register, the opposite edges of each such channel in said B register also being defined by potential barriers in the substrate for confining any charge which may be present in a channel to that channel, said B register having electrodes extending in the row direction over the channels of said B register responsive to applied multiple phase voltages for the storage in and transfer of charge along the channels of said B register; said electrodes of said A and B registers being of the single layer type and comprising semiconductor material of one conductivity type and being separated from one another by "gaps" formed of semiconductor material of opposite conductivity type; and a control electrode insulated from the electrodes of the A register and overlying both said electrodes and the gaps between said electrodes, said control electrode for receiving a control voltage for controlling the conduction through said gaps.

Claim 8

In a charge-coupled device (CCD) imager of the field-transfer type comprising: a CCD A register including a substrate formed with channels extending in a column direction, the opposite edges of each channel being defined by potential barriers in the substrate for confining any charge which may be present in a channel to the channel, said A register also having electrodes extending in a row direction substantially orthogonal to said column direction, over said channels, responsive to applied voltages for the storage in and transfer of charges along said channels, said register for producing and storing charge signals in response to a radiation image projected onto said register; a CCD B register coupled to the A register and into which a field of charge signals from said A register may be shifted for temporary storage in said B register, said B register including a substrate formed with channels aligned with corresponding channels of the A register, the opposite edges of each such channel in said B register also being defined by potential barriers in the substrate for confining any charge which may be present in a channel to that channel, said B register having electrodes extending in the row direction over the channels of said B register responsive to applied multiple phase voltages for the storage in and transfer of charge along the channels of said B register; said electrodes of said A and B registers being of the single layer type and comprising semiconductor material of one conductivity type and being separated from one another by "gaps" formed of semiconductor material of opposite conductivity type; and a control electrode insulated from the electrodes of the A register and overlying both said electrodes and the gaps between said electrodes, said control electrode for receiving a control voltage for controlling the conduction through said gaps.

Claim 9

In a CCD imager as set forth in claim 4, further including: means responsive to current passing through at least one of said gaps between electrodes of said A register for supplying said control voltage to said control electrode at a level to maintain said current constant.

Claim 10

In a CCD imager as set forth in claim 4, further including: a second control electrode, this one insulated from the electrodes of the B register and from the control electrode over the A register, said second control electrode overlying the electrodes of the B register and the gaps between the electrodes of the B register, said second control electrode for receiving a second control voltage for controlling the conduction through said gaps between the electrodes of the B register.

Claim 11

In a CCD imager as set forth in claim 6, further including: first means responsive to current passing through at least one of the gaps between electrodes of said A register for supplying said control voltage to said control electrode over the electrodes of the A register at a level to maintain said current passing through said gaps between electrodes of the A register at a substantially constant value; and second means responsive to current passing through at least one of the gaps between electrodes of said B register for supplying said second control voltage at a level to maintain the current passing through the gaps between electrodes of the B register at a substantially constant value.