US4238757A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor for detection of biological reactions
Assignee: General Electric Co
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Filing: 1976-03-19
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Granted: 1980-12-09
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Expires: 1996-03-19
Abstract
Abstract A field effect transistor including conventional source and drain electrodes employs, in the gate region, a layer of antibody specific to a particular antigen. An electrolyte solution such as 0.155 Normal sodium chloride atop the antibody layer provides a predetermined drain current versus drain voltage characteristic for the device. Replacement of the electrolyte solution with another electrolyte solution containing the antigen alters the charge of the protein surface layer due to the antigen-antibody reaction, thus affecting charge concentration in a semiconductor inversion layer in the transistor. The time rate of change of drain current thus provides a measure of the antigenic protein concentration in the replacement solution.
Inventors
- 👤 John F. Schenck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; G01N27/4145; G01N33/00; G01N33/48; G01N33/50; G01N33/53; G01N33/543; G01N33/54366; G01N33/54373; Y; Y10; Y10S; Y10S436/00; Y10S436/806
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
136 words
A field effect transistor comprising: a substrate of semiconductor material of one conductivity type, said semiconductor material containing first and second separated regions of opposite conductivity type extending a predetermined distance into said substrate from the upper surface thereof, each of said first and second regions, respectively, being situated at, and defining, opposite ends of a channel region of said one conductivity type semiconductor material; first and second electrical conducting means contacting each of said first and second separated regions of opposite conductivity type, respectively; an insulating coating overlaying said substrate atop said channel region; a monomolecular layer of a first protein adsorbed atop said insulating coating, said layer of said first protein being adapted to support a fluid specimen to be investigated; and third electrical conducting means adapted to make contact to said fluid specimen.
Claim 2
Dependent Claim
136 words
A field effect transistor comprising: a substrate of semiconductor material of one conductivity type, said semiconductor material containing first and second separated regions of opposite conductivity type extending a predetermined distance into said substrate from the upper surface thereof, each of said first and second regions, respectively, being situated at, and defining, opposite ends of a channel region of said one conductivity type semiconductor material; first and second electrical conducting means contacting each of said first and second separated regions of opposite conductivity type, respectively; an insulating coating overlaying said substrate atop said channel region; a monomolecular layer of a first protein adsorbed atop said insulating coating, said layer of said first protein being adapted to support a fluid specimen to be investigated; and third electrical conducting means adapted to make contact to said fluid specimen.
Claim 3
Dependent Claim
15 words
The apparatus of claim 1 wherein said monomolecular layer of a first protein comprises antibodies.
Claim 4
Dependent Claim
23 words
The apparatus of claim 2 wherein said fluid specimen comprises a solution to be tested for presence of antigens specific to said antibodies.
Claim 5
Dependent Claim
18 words
The apparatus of claim 1 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon dioxide.
Claim 6
Dependent Claim
18 words
The apparatus of claim 1 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon nitride.
Claim 7
Dependent Claim
18 words
The apparatus of claim 3 wherein said semiconductor material comprises silicon and said insulated coating comprises silicon dioxide.
Claim 8
Dependent Claim
18 words
The apparatus of claim 3 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon nitride.
Claim 9
Dependent Claim
33 words
The apparatus of claim 1 wherein said fluid specimen comprises a solution containing an antibody concentration to be measured and said monomolecular layer of a first protein comprises antigen specific to said antibody.
Claim 10
Dependent Claim
18 words
The apparatus of claim 8 wherein said semiconductor material comprises silicon and said insulated coating comprises silicon dioxide.
Claim 11
Dependent Claim
18 words
The apparatus of claim 8 wherein said semiconductor material comprises silicon and said insulated coating comprises silicon nitride.
Claim 12
Dependent Claim
160 words
An integrated circuit comprising: a wafer of semiconductor material of one conductivity type, said material containing a plurality of pairs of separated regions of opposite conductivity type in said wafer extending a predetermined distance into said wafer from the upper surface thereof, each pair of said regions defining opposite ends of a channel region therebetween of said one conductivity type semiconductor material; a plurality of pairs of electrical conducting means contacting each of said pairs of separated regions of opposite conductivity type, respectively; a conductive strip interconnecting one electrical conducting means in each of said pairs thereof; an insulating coating overlaying said wafer atop each of said channel regions; a monomolecular layer of different protein material absorbed atop the insulating coating above each of said channel regions, respectively, each said layer of different protein material being adapted to contact, in common, a fluid specimen to be investigated; and third electrical conducting means adapted to make contact to said fluid specimen.
Claim 13
Dependent Claim
160 words
An integrated circuit comprising: a wafer of semiconductor material of one conductivity type, said material containing a plurality of pairs of separated regions of opposite conductivity type in said wafer extending a predetermined distance into said wafer from the upper surface thereof, each pair of said regions defining opposite ends of a channel region therebetween of said one conductivity type semiconductor material; a plurality of pairs of electrical conducting means contacting each of said pairs of separated regions of opposite conductivity type, respectively; a conductive strip interconnecting one electrical conducting means in each of said pairs thereof; an insulating coating overlaying said wafer atop each of said channel regions; a monomolecular layer of different protein material absorbed atop the insulating coating above each of said channel regions, respectively, each said layer of different protein material being adapted to contact, in common, a fluid specimen to be investigated; and third electrical conducting means adapted to make contact to said fluid specimen.
Claim 14
Dependent Claim
20 words
The apparatus of claim 11 wherein each said monomolecular layer of different protein material comprises a different antibody layer, respectively.
Claim 15
Dependent Claim
38 words
The apparatus of claim 12 wherein said fluid specimen comprises a solution to be tested for presence of antigens specific to any of the antibody layers adsorbed atop the insulating coating above each of said channel regions, respectively.
Claim 16
Dependent Claim
18 words
The apparatus of claim 12 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon dioxide.
Claim 17
Dependent Claim
18 words
The apparatus of claim 12 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon nitride.
Claim 18
Dependent Claim
18 words
The apparatus of claim 13 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon dioxide.
Claim 19
Dependent Claim
18 words
The apparatus of claim 13 wherein said semiconductor material comprises silicon and said insulating coating comprises silicon nitride.
References Cited (Backward Citations)
US3831432A
Cited
US3853467A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1983-12-09 | 1984-06-09 | 1984-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-09 | 1988-06-09 | 1988-12-09 | $3760.00 | Window Closed / Lapsed |
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