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US4242149A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making photodetectors using ion implantation and laser annealing

Assignee: United States Department of the Army
•
Filing: 1979-07-31
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Granted: 1980-12-30
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Expires: 1999-07-31
📄 Original PDF 🌐 Google Patents

Abstract

Abstract A semiconductor substrate is bombarded by ions of sufficient energy to penetrate the surface of the substrate to some average predetermined depth. The substrate is then scanned by a laser beam having a small diameter compared to the substrate thickness and having sufficient energy to heat the substrate to the predetermined depth. The heat allows surface damage on the substrate from the ion bombardment to heal, and allows the ions and substrate to form a compound to the predetermined depth with controllable redistribution. This compound is the photodetector of the method. The ions may be implanted through a mask to produce isolated detector regions, or the entire substrate surface may be bombarded, and those regions not desired for detector regions may be removed by a laser beam of sufficient energy to cause evaporation of a layer of the substrate. Exemplary substrate and ions are respectively cadmium telluride and mercury.

Inventors

  • 👤 Gerard J. King
  • 👤 Aubrey J. Dunn

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 03:42
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/125; H10F71/1253; H10F71/1272; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543; Y02E10/544; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/003; Y10S148/006; Y10S148/084; Y10S148/093

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 77 words
A method of making at least one semiconductor photodetector including the steps of: preparing a binary compound semiconductor substrate; ion bombarding a side of said substrate in at least one predetermined area to implant ions to a predetermined depth; and locally laser heating at least said predetermined area to said predetermined depth, whereby ion bombardment damage is healed, and whereby the implanted ions combine with at least one element of said compound to form a photodetector compound.
Claim 2
Independent Claim 77 words
A method of making at least one semiconductor photodetector including the steps of: preparing a binary compound semiconductor substrate; ion bombarding a side of said substrate in at least one predetermined area to implant ions to a predetermined depth; and locally laser heating at least said predetermined area to said predetermined depth, whereby ion bombardment damage is healed, and whereby the implanted ions combine with at least one element of said compound to form a photodetector compound.
Claim 3
Dependent Claim 40 words
The method as recited in claim 1 wherein an entire surface of said substrate is ion bombarded, and including an additional step of: locally laser heating said surface to evaporate said surface in a predetermined pattern to a predetermined depth.
Claim 4
Dependent Claim 12 words
Products as produced by the methods of either claim 1 or 2.
Claim 5
Independent Claim 69 words
The method as set forth in either of claims 1 or 2 wherein the substrate is a compound of elements with at least one element taken from Group IIIA and at least one element taken from Group VA of the periodic table of elements, and the ion bombarding is performed with ions of an element chosen from the two said groups, but different from the elements of the substrate.
Claim 6
Dependent Claim 69 words
The methods as set forth in either of claims 1 or 2 wherein the substrate is a compound of elements with at least one element taken from Group IIB and at least one element taken from Group VIA of the periodic table of elements, and the ion bombarding is performed with ions of an element chosen from the two said groups, but different from the elements of the substrate.

References Cited (Backward Citations)

DE2208271A1 Cited
US4081653A Cited
US4154625A Cited
US4147563A Cited
US4155779A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-12-30 1984-06-30 1984-12-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-12-30 1988-06-30 1988-12-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-12-30 1992-06-30 1992-12-30 $7700.00 Window Closed / Lapsed

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