US4252861A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Growth technique for silicon-on-ceramic
Assignee: Honeywell Inc
•
Filing: 1979-09-28
•
Granted: 1981-02-24
•
Expires: 1999-09-28
Abstract
Abstract The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a higher temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The higher temperature of the substrate causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is away from the substrate. This provides several advantages including increased growth speed, a nonhomogeneous doping of the silicon layer, that is an impurity concentration gradient and results in a high-low junction at the back surface and gives the back surface field effect.
Inventors
- 👤 J. Don Heaps
- 👤 J. David Zook
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:43
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/80; C04B41/81; C04B41/85; C30; C30B; C30B15/00; C30B15/007; C30B29/00; C30B29/60; C30B29/605; H; H10; H10F; H10F71/00; H10F71/121; H10F71/1221; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
119 words
An improved method for growing a layer of polycrystalline silicon on a substrate from a source of molten silicon comprising the steps of: providing a source of molten silicon; providing a substrate to grow a silicon layer on; transporting the substrate with respect to and proximate the molten silicon whereby contact is made between the molten silicon and the substrate surface causing a silicon layer to grow on said surface; and tilting the solid-liquid interface of the growing silicon layer to be substantially parallel with the outer surface of the layer by heating the substrate from the non-coated side to provide a heat flow through the substrate, to, through and out of the outer surface of the silicon layer.
Claim 2
Dependent Claim
119 words
An improved method for growing a layer of polycrystalline silicon on a substrate from a source of molten silicon comprising the steps of: providing a source of molten silicon; providing a substrate to grow a silicon layer on; transporting the substrate with respect to and proximate the molten silicon whereby contact is made between the molten silicon and the substrate surface causing a silicon layer to grow on said surface; and tilting the solid-liquid interface of the growing silicon layer to be substantially parallel with the outer surface of the layer by heating the substrate from the non-coated side to provide a heat flow through the substrate, to, through and out of the outer surface of the silicon layer.
Claim 3
Dependent Claim
40 words
The method according to claim 1 in which the substrate to grow the silicon layer on is a ceramic and in which the ceramic substrate has a surface thereof carbon coated where it is desired that the silicon layer grow.
Claim 4
Dependent Claim
88 words
The method according to claim 2 and wherein the step of transporting the substrate further comprises: immersing the substrate in molten silicon; removing the substrate from the melt in a non vertical position with the carbon coated surface of the substrate facing upwardly; growing a silicon layer on the emerging carbon coated surface of the substrate; and wherein the heating of the substrate from the non-coated side is by way of the still immersed lower face of the substrate opposite the area where solidification of silicon is occuring.
Claim 5
Dependent Claim
141 words
The method according to claim 2 wherein the step of providing a source of molten silicon further comprises: providing an elongated crucible for containing the molten silicon; maintaining the level in the crucible such that the silicon surface rises up from the crucible surface in a convex meniscus; and wherein the step of transporting further comprises: supporting the substrate with the carbon coated surface facing downwardly; traversing the downwardly facing surface of the substrate over and across the surface of the molten silicon meniscus with the surface making contact with the silicon meniscus as the substrate traverses to grow a silicon layer as the carbonized surface emerges from contact with the silicon meniscus; and wherein the step of tilting the interface by heating the substrate further comprises: providing a heater above the substrate in the region where silicon growth is occuring.
Claim 6
Dependent Claim
141 words
The method according to claim 1 wherein the step of providing a source of molten silicon further comprises: providing an elongated crucible for containing the molten silicon; maintaining the level in the crucible such that the silicon surface rises up from the crucible surface in a convex meniscus; and wherein the step of transporting further comprises: supporting the substrate with the surface to be coated facing downwardly; traversing the downwardly facing surface of the substrate over and across the surface of the molten silicon meniscus with the surface making contact with the silicon meniscus as the substrate traverses to grow a silicon layer as the surface emerges from contact with the silicon meniscus; and wherein the step of tilting the interface by heating the substrate further comprises: providing a heater above the substrate in the region where silicon growth is occuring.
Claim 7
Dependent Claim
21 words
A silicon layer on a substrate, said layer having an impurity concentration gradient, made according to the method of claim 1.
Claim 8
Dependent Claim
168 words
An improved method for growing a layer of polycrystalline silicon on a substrate from a source of molten silicon comprising the steps of: providing a source of molten silicon; providing a substrate to grow a silicon layer on said substrate having a surface area thereof of carbon where it is desired that the silicon layer grow; transporting the substrate with respect to and proximate the molten silicon whereby contact is made between the molten silicon and the carbon surface of the substrate causing a silicon layer to grow on said surface; and further heating an area of the substrate in the region of silicon solidification from the non-coated side to provide heat flow through the substrate to, through and out of the outer surface of the silicon layer whereby because of the heat flow pattern, solidification of the silicon layer commences at the outer surface and progresses inwardly towards the substrate resulting in an increasing impurity level gradient from outer surface to substrate surface of the silicon layer.
Claim 9
Dependent Claim
168 words
An improved method for growing a layer of polycrystalline silicon on a substrate from a source of molten silicon comprising the steps of: providing a source of molten silicon; providing a substrate to grow a silicon layer on said substrate having a surface area thereof of carbon where it is desired that the silicon layer grow; transporting the substrate with respect to and proximate the molten silicon whereby contact is made between the molten silicon and the carbon surface of the substrate causing a silicon layer to grow on said surface; and further heating an area of the substrate in the region of silicon solidification from the non-coated side to provide heat flow through the substrate to, through and out of the outer surface of the silicon layer whereby because of the heat flow pattern, solidification of the silicon layer commences at the outer surface and progresses inwardly towards the substrate resulting in an increasing impurity level gradient from outer surface to substrate surface of the silicon layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |