Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
169 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a semiconductive metal oxide layer which is gas-permeable on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) subjecting the product of step (d) to a vapor phase treatment for a period not shorter than 30 hours at a relative humidity of not lower than 90% at a temperature not lower than 80° C.
Claim 2
Independent Claim
169 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a semiconductive metal oxide layer which is gas-permeable on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) subjecting the product of step (d) to a vapor phase treatment for a period not shorter than 30 hours at a relative humidity of not lower than 90% at a temperature not lower than 80° C.
Claim 3
Independent Claim
152 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a gas-permeable, semiconductive metal oxide layer on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) immersing the product of step (d) in boiling water for a predetermined period of time ranging from 10 to 180 minutes.
Claim 4
Independent Claim
152 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a gas-permeable, semiconductive metal oxide layer on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) immersing the product of step (d) in boiling water for a predetermined period of time ranging from 10 to 180 minutes.
Claim 5
Independent Claim
202 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a gas-permeable, semiconductive metal oxide layer on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) subjecting the product of step (d) to a combination of treatments which comprises immersing said product in boiling water for a period of from 10 to 60 minutes and maintaining the thus treated product in a vapor phase atmosphere for a period of not shorter than 1 hour but shorter than 30 hours at a relative humidity of not lower than 90% and at a temperature not lower than 80° C.
Claim 6
Independent Claim
202 words
A method of producing a humidity sensing element of a capacitance change type, the method comprising the steps of: (a) anodizing a valve metal body to form a dielectric oxide layer film on a surface of said metal body; (b) forming a gas-permeable, semiconductive metal oxide layer on said dielectric film by thermal decomposition of an aqueous solution comprising a thermally decomposable metal salt applied to said dielectric oxide film; (c) forming a gas-permeable layer of carbon on at least a portion of the outer surface of said semiconductive metal oxide layer; (d) forming a gas-permeable and electronically conductive layer on said layer of carbon by applying a paint comprising a metal powder and a synthetic resin as a binder to the outer surface of said layer of carbon; and (e) subjecting the product of step (d) to a combination of treatments which comprises immersing said product in boiling water for a period of from 10 to 60 minutes and maintaining the thus treated product in a vapor phase atmosphere for a period of not shorter than 1 hour but shorter than 30 hours at a relative humidity of not lower than 90% and at a temperature not lower than 80° C.
Claim 7
Dependent Claim
23 words
A method according to claim 1, 2 or 3, wherein an anodization voltage to accomplish step (a) is not higher than 150 volts.
Claim 8
Dependent Claim
24 words
A method according to claim 4, wherein said aqueous solution is a solution of manganese nitrate and has a density not higher than 1.7.
Claim 9
Dependent Claim
38 words
A method according to claim 1, 2 or 3, wherein said aqueous solution is a solution of at least one thermally decomposable salt selected from the group consisting of manganese nitrate, lead nitrate, ruthenium nitrate and ruthenium trichloride.
Claim 10
Dependent Claim
63 words
A method according to claim 1, 2 or 3, wherein step (c) is accomplished by applying an aqueous dispersion of colloidal particles of carbon onto at least a portion of the outer surface of said semiconductive metal oxide layer and thereafter drying said aqueous dispersion applied onto said semiconductive metal oxide layer, the density of said aqueous dispersion being not higher than 1.5.
Claim 11
Dependent Claim
34 words
A method according to claim 1, 2, or 3, wherein said paint comprises as said binder at least one synthetic resin selected from the group consisting of an acrylic resin and a fluorocarbon resin.
Claim 12
Dependent Claim
31 words
A method according to claim 8, wherein said metal powder in said paint is of at least one metal selected from the group consisting of silver, gold, platinum, copper and aluminum.
Claim 13
Dependent Claim
65 words
A method according to claim 1, 2, or 3, further comprising the step of washing the product of step (a) with water to remove an anodizing liquid used in step (a) from said dielectric oxide film and then exposing the washed product to a clean gas atmosphere thereby to evaporate a portion of moisture present on and in said dielectric film prior to step (b).
Claim 14
Dependent Claim
45 words
A method according to claim 10, wherein said clean gas atmosphere is air of which temperature is in the range from 20° to 90° C., the washed product being exposed to said air for a period of time ranging from 1 minute to 10 minutes.
Claim 15
Dependent Claim
34 words
A method according to claim 1, 2, or 3, further comprising the step of treating the product of step (d) with an organic solvent for a predetermined period of time prior to step (e).
Claim 16
Dependent Claim
26 words
A method according to claim 12, wherein said predetermined period of time ranges from 20 seconds to 20 minutes, said organic solvent being a polar solvent.
Claim 17
Dependent Claim
34 words
A method according to claim 13, wherein said organic solvent consists of at least one organic compound selected from the group consisting of ketones, carboxylic acids, esters, alcohols, amides, xylenes and halogenated organic compounds.