US4276137A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Control of surface recombination loss in solar cells
Assignee: International Business Machines Corp
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Filing: 1979-07-23
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Granted: 1981-06-30
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Expires: 1999-07-23
Abstract
Abstract Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.
Inventors
- 👤 Harold J. Hovel
- 👤 Jerry M. Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:53
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
162 words
The process of fabricating a solar cell comprising in combination: providing a monocrystalline GaAs semiconductor solar cell device body with a light receiving surface and having a p-n junction essentially parallel to said light receiving surface; providing a layer of GaAlAs on said light receiving surface; depositing a layer of aluminum over said GaAlAs layer of the order of 100 A thick; oxidizing said device body as the anode in an RF field of the order of 30 to 100 volts positive in an evacuated environment containing oxygen at a pressure of the order of 10 -3 to 1 -2 Torr for a time sufficient to form an oxide layer from said GaAlAs layer of the order of 700 to 1000 A thick covered by an aluminum oxide layer; and annealing said device body in the presence of hydrogen at a temperature of the order of 400° to 500° C. for a period of the order of 15 minutes to 1 hour.
Claim 2
Dependent Claim
162 words
The process of fabricating a solar cell comprising in combination: providing a monocrystalline GaAs semiconductor solar cell device body with a light receiving surface and having a p-n junction essentially parallel to said light receiving surface; providing a layer of GaAlAs on said light receiving surface; depositing a layer of aluminum over said GaAlAs layer of the order of 100 A thick; oxidizing said device body as the anode in an RF field of the order of 30 to 100 volts positive in an evacuated environment containing oxygen at a pressure of the order of 10 -3 to 1 -2 Torr for a time sufficient to form an oxide layer from said GaAlAs layer of the order of 700 to 1000 A thick covered by an aluminum oxide layer; and annealing said device body in the presence of hydrogen at a temperature of the order of 400° to 500° C. for a period of the order of 15 minutes to 1 hour.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-29 | 1984-12-29 | 1985-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-29 | 1988-12-29 | 1989-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-29 | 1992-12-29 | 1993-06-30 | $7700.00 | Window Closed / Lapsed |