Polysilicon-to-substrate contact processing

Claim 2

A process for forming at least a contact between a doped region of a silicon substrate and a layer of polysilicon formed on the substrate, comprising: forming a polysilicon-etch-resistant mask on the polysilicon layer and exposing a selected portion of the layer to define a conductor pattern; etching partially through the selected portion; oxidizing the residual polysilicon; etching the oxidized residual polysilicon to remove the oxidized residual polysilicon without etching the silicon substrate; and doping the contact region formed between the polysilicon conductor and the semiconductor substrate.

Claim 3

The process of claim 1 wherein the polysilicon conductor has an outer surface on the side thereof opposite the contact region and wherein the contact region is doped by exposing the conductor outer surface to dopant provided by one of diffusion or ion implantation to deposit the dopant in the exposed surface and driving-in the dopant to the contact region.

Claim 4

The process of claim 1 wherein the polysilicon layer is formed on the substrate using chemical vapor deposition to provide a layer of predetermined, precisely controlled thickness, further comprising: forming a separate monitor layer of polysilicon of the predetermined thickness on a non-silicon base by chemical vapor deposition; determining the time, t c , required to completely etch through the polysilicon monitor layer; and wherein the process of etching the polysilicon layer comprises parameters duplicating those used in etching the polysilicon monitor layer except that etching is for a time sufficiently less than t c to provide a polysilicon residual of the desired thickness.

Claim 5

The process of claim 1 or 3 wherein the polysilicon layer is formed by the pyrolysis of silane at approximately 600° C. to 700° C.

Claim 6

The process of claim 1 or 3 wherein the polysilicon layer is formed by the pyrolysis of silane to a thickness of about 5,000 Angstroms.

Claim 7

The process of claim 3 wherein: the monitor layer of polysilicon is formed on a non-silicon layer; and t c is determined by etching the polysilicon monitor layer to completely remove the monitor layer and measuring the time required for removal as determined by the change of color or reflectance properties from those characteristic of polysilicon to those characteristic of the non-silicon layer.

Claim 8

In a process for forming an integrated circuit comprising a silicon substrate having impurity regions forming active and passive components and interconnections therein, wherein contacts are formed connecting selected regions of the substrate to polysilicon conductors terminating at the selected regions, the improvement comprising: forming (1) a layer of polysilicon on the silicon substrate and (2) a separate monitor layer of polysilicon of the same thickness as the polysilicon layer on a non-silicon layer; determining the time, t c , required to etch through the polysilicon monitor layer; etching the polysilicon layer in the presence of a polysilicon-etch-resistant mask formed on the polysilicon defining a conductor pattern therein, and for a time sufficiently less than t c to form the polysilicon conductors bounded by a residual thickness of the polysilicon layer; converting the residual polysilicon to silicon oxide; removing the oxidized residual polysilicon by applying an etchant that selectively etches silicon oxide; and forming ohmic contact between the conductors and the underlying impurity regions of the substrate by doping through the polysilicon conductors.

Claim 9

In a process for forming an integrated circuit comprising a silicon substrate having impurity regions forming active and passive components and interconnections therein, wherein contacts are formed connecting selected regions of the substrate to polysilicon conductors terminating at the selected regions, the improvement comprising: forming (1) a layer of polysilicon on the silicon substrate and (2) a separate monitor layer of polysilicon of the same thickness as the polysilicon layer on a non-silicon layer; determining the time, t c , required to etch through the polysilicon monitor layer; etching the polysilicon layer in the presence of a polysilicon-etch-resistant mask formed on the polysilicon defining a conductor pattern therein, and for a time sufficiently less than t c to form the polysilicon conductors bounded by a residual thickness of the polysilicon layer; converting the residual polysilicon to silicon oxide; removing the oxidized residual polysilicon by applying an etchant that selectively etches silicon oxide; and forming ohmic contact between the conductors and the underlying impurity regions of the substrate by doping through the polysilicon conductors.

Claim 10

The process of claim 7 wherein the polysilicon layer and polysilicon monitor layer are formed by the pyrolysis of silane at approximately 600° C. to 700° C.

Claim 11

The process of claim 7 or 8 wherein hydrofluoric acid is used to selectively etch the oxidized polysilicon.

Claim 12

An improved process for forming at least a contact between a silicon substrate and a layer of polysilicon formed on the substrate, the improvement comprising: forming a polysilicon-etch-resistant mask on the polysilicon layer and exposing a selected portion of the layer to define a conductor pattern; etching partially through the selected portion; oxidizing the residual polysilicon; and removing the oxidized residual polysilicon using a selective etchant that etches the oxidized residual polysilicon and not silicon.

Claim 13

An improved process for forming at least a contact between a silicon substrate and a layer of polysilicon formed on the substrate, the improvement comprising: forming a polysilicon-etch-resistant mask on the polysilicon layer and exposing a selected portion of the layer to define a conductor pattern; etching partially through the selected portion; oxidizing the residual polysilicon; and removing the oxidized residual polysilicon using a selective etchant that etches the oxidized residual polysilicon and not silicon.

Claim 14

The process of claim 10 wherein buffered hydrofluoric acid is the etchant for the oxidized polysilicon.