US4368083A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for doping semiconductors
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1981-01-23
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Granted: 1983-01-11
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Expires: 2001-01-23
Abstract
Abstract The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.
Inventors
- 👤 Michel Bruel
- 👤 Michel Floccari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:15
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/214
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
150 words
Process for doping semiconductors consisting in implanting dopant particles in a substrate and in rendering them electrically active, so as to modify the physical properties of the substrate, comprising the following successive steps of: effecting an implantation by recoil of the dopant particles in the substrate, which consists in depositing on the surface of the substrate a layer of material containing dopant particles, and in bombarding said layer by means of a beam of bombarding particles, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; effecting transitory annealing, which consists in bringing to the surface, or to the level of the first implanted layers, for a very short length of time, an energy density such that very high temperatures are reached, so as to produce a local liquefaction of the first layers of the substrate.
Claim 2
Dependent Claim
150 words
Process for doping semiconductors consisting in implanting dopant particles in a substrate and in rendering them electrically active, so as to modify the physical properties of the substrate, comprising the following successive steps of: effecting an implantation by recoil of the dopant particles in the substrate, which consists in depositing on the surface of the substrate a layer of material containing dopant particles, and in bombarding said layer by means of a beam of bombarding particles, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; effecting transitory annealing, which consists in bringing to the surface, or to the level of the first implanted layers, for a very short length of time, an energy density such that very high temperatures are reached, so as to produce a local liquefaction of the first layers of the substrate.
Claim 3
Dependent Claim
19 words
The doping process of claim 1, wherein the layer of material containing the dopant particles is made by evaporation.
Claim 4
Dependent Claim
26 words
The doping process of either one of claims 1 and 2, wherein the beam of bombarding particles is constituted by a beam of rare gas ions.
Claim 5
Dependent Claim
23 words
The process of either one of claims 1 to 2, wherein the layer of material deposited on the substrate is eliminated by sublimation.
Claim 6
Dependent Claim
27 words
The doping process of either one of claims 1 to 2, wherein the layer of material deposited on the substrate is eliminated by means of chemical attack.
Claim 7
Dependent Claim
32 words
The doping process of either one of claims 1 to 2, wherein the layer of material deposited on the substrate is eliminated by ionic atomization with the aid of an ion beam.
Claim 8
Dependent Claim
25 words
The doping process of either one of claims 1 to 2, wherein the transitory annealing is effected with the aid of a pulsed electron beam.
Claim 9
Dependent Claim
23 words
The doping process of either one of claims 1 to 2, wherein transitory annealing is effected with the aid of a laser shot.
Claim 10
Dependent Claim
27 words
The doping process of either one of claim 1 to 2, wherein the different steps of the process are carried out in the same enclosure in vacuo.
Claim 11
Dependent Claim
29 words
The doping process of claim 3, wherein the ion beam used for implantation by recoil has the same constitution as that used for eliminating the layer of deposited material.
Claim 12
Dependent Claim
98 words
Application of the process of either one of claims 1 to 2 to the doping of silicon by antimony with the aid of a bombardment of argon ions, wherein the respresentative point, having the thickness of the layer of dopant material for x-axis and the energy of the bombarding particles for y-axis, is located within the range between two curves represented by y 1 =m 1 X and y 2 =m 2 X where y 1 =1500, y 2 =3000, X=500, m 1 =3 and m 2 =6 for values of X from 0 to approximately 500 Angstrom.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |