Photo electro transducer device

Claim 2

A photo electro transducer device comprising a photo electro transducer portion having n photo electro transducer elements provided with photoreceptor faces and arranged in an array and a crosstalk preventing portion having n diode elements electrically connected respectively to said n photo electro transducer elements, wherein each of said n photo electro transducer elements is composed of one of n electrode areas A arranged in an array on a substrate, a photoreceptor layer provided on said electrode area A and an electrode area B provided on said photoreceptor layer, and wherein each of said diode elements is composed of a portion of said electrode area A, an electrode area C and a semiconductor layer provided between said electrode areas A and C.

Claim 3

A photo electro transducer device according to claim 1, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and Shottky junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 4

A photo electro transducer device according to claim 1, wherein Shottky junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and ohmic junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 5

A photo electro transducer device according to claim 1, wherein hetero junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and ohmic junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 6

A photo electro transducer device according to claim 1, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and hetero junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 7

A photo electro transducer device according to claim 1, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, ohmic junctions are further formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C, and said semiconductor layer contains a homo junction area.

Claim 8

A photo electro transducer device according to claim 1, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, an ohmic junction is further formed between said photoreceptor area and said electrode area B, and a Shottky junction is formed between said semiconductor layer and said electrode area C.

Claim 9

A photo electro transducer device according to claim 1, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, an ohmic junction is further formed between said photoreceptor layer and said electrode area B, and a hetero junction is formed between said semiconductor layer and said electrode area C.

Claim 10

A photo electro transducer device according to claim 1, wherein said crosstalk preventing portion comprises light shielding means.

Claim 11

A photo electro transducer device according to claim 1, wherein said photoreceptor layer and said semiconductor layer are mutually separated on said electrode area A.

Claim 12

A photo electro transducer device, comprising: a photo electro transducer portion composed of n photo electro transducer elements arranged in a linear array of a substantially constant pitch on a substrate and equally divided into N photo electro transducer blocks each containing k photo electro transducer elements; a crosstalk preventing portion composed of n diode elements respectively connected in series to said photo electro transducer elements and divided into N diode blocks corresponding to said photo electro transducer blocks; a storage section composed of k storage elements each connected to the photo electro transducer elements of the same ordinal position among said k photo electro transducer elements in different photo electro transducer blocks; a switching element block composed of k switching elements provided in correspondence with said storage elements, respectively, for transferring the signals stored therein; a shift register for controlling said switching elements; N switching elements respectively connected in series to said diode blocks; and a shift register for controlling said N switching elements; wherein each block of k photo electro transducer elements is composed of one of k electrode areas A arranged in an array on said substrate, a photoreceptor layer provided on said electrode area A and an electrode area B provided on said photoreceptor layer, and wherein each of said diode elements is composed of a portion of said electrode area A, an electrode area C and a semiconductor layer provided between said electrode areas A and C.

Claim 13

A photo electro transducer device, comprising: a photo electro transducer portion composed of n photo electro transducer elements arranged in a linear array of a substantially constant pitch on a substrate and equally divided into N photo electro transducer blocks each containing k photo electro transducer elements; a crosstalk preventing portion composed of n diode elements respectively connected in series to said photo electro transducer elements and divided into N diode blocks corresponding to said photo electro transducer blocks; a storage section composed of k storage elements each connected to the photo electro transducer elements of the same ordinal position among said k photo electro transducer elements in different photo electro transducer blocks; a switching element block composed of k switching elements provided in correspondence with said storage elements, respectively, for transferring the signals stored therein; a shift register for controlling said switching elements; N switching elements respectively connected in series to said diode blocks; and a shift register for controlling said N switching elements; wherein each block of k photo electro transducer elements is composed of one of k electrode areas A arranged in an array on said substrate, a photoreceptor layer provided on said electrode area A and an electrode area B provided on said photoreceptor layer, and wherein each of said diode elements is composed of a portion of said electrode area A, an electrode area C and a semiconductor layer provided between said electrode areas A and C.

Claim 14

A photo electro transducer device according to claim 11, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and Shottky junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 15

A photo electro transducer device according to claim 11, wherein Shottky junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and ohmic junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 16

A photo electro transducer device according to claim 11, wherein hetero junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and ohmic junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 17

A photo electro transducer device according to claim 11, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, and hetero junctions are formed between said photoreceptor layer and said electrode area B and between said semiconductor layer and said electrode area C.

Claim 18

A photo electro transducer device according to claim 11, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, ohmic junctions are further formed between said photoconductor layer and said electrode area B and between said semiconductor layer and said electrode area C, and said semiconductor layer contains a homo junction area therein.

Claim 19

A photo electro transducer device according to claim 11, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, an ohmic junction is further formed between said photoreceptor layer and said electrode area B, and a Shottky junction is formed between said semiconductor layer and said electrode area C.

Claim 20

A photo electro transducer device according to claim 11, wherein ohmic junctions are formed between said electrode area A and said photoreceptor layer and between said electrode area A and said semiconductor layer, an ohmic junction is further formed between said photoreceptor layer and said electrode area B, and a hetero junction is formed between said semiconductor layer and said electrode area C.

Claim 21

A photo electro transducer device according to claim 11, wherein said crosstalk preventing portion comprises light shielding means.

Claim 22

A photo electro transducer device according to claim 11, wherein said photoreceptor layer and said semiconductor layer are mutually separated on said electrode area A.

Claim 23

A photo electro transducer device, comprising: a photo electro transducer portion composed of plural photo electro transducer elements having respective photoreceptor faces and arranged in an array, each photo electro transducer element being composed of a photoreceptor layer, an electrode A provided on one surface of said photoreceptor layer and an electrode B provided on the other surface of said photoreceptor layer and having a crosstalk preventing diode structure portion formed by contact of said photoreceptor layer with said electrode A and a photo electro transducing photodiode structure portion formed by contact of said photoreceptor layer with said electrode B; means for causing the photo electro transducer function of said photo electro transducer elements; storage means for storing the signals output from said photo electro transducer elements; and transfer means for transferring the signals stored in said storage means.

Claim 24

A photo electro transducer device, comprising: a photo electro transducer portion composed of plural photo electro transducer elements having respective photoreceptor faces and arranged in an array, each photo electro transducer element being composed of a photoreceptor layer, an electrode A provided on one surface of said photoreceptor layer and an electrode B provided on the other surface of said photoreceptor layer and having a crosstalk preventing diode structure portion formed by contact of said photoreceptor layer with said electrode A and a photo electro transducing photodiode structure portion formed by contact of said photoreceptor layer with said electrode B; means for causing the photo electro transducer function of said photo electro transducer elements; storage means for storing the signals output from said photo electro transducer elements; and transfer means for transferring the signals stored in said storage means.

Claim 25

A photo electro transducer device according to claim 21, wherein said diode structure portion and said photodiode structure portion are formed by Shottky junctions.

Claim 26

A photo electro transducer device according to claim 21, wherein said diode structure portion and said photodiode structure portion are formed by hetero junctions.

Claim 27

A photo electro transducer device according to claim 21, wherein either one of said diode structure portion and said photodiode structure portion is formed by a Shottky junction and the other is formed by a hetero junction.

Claim 28

A photo electro transducer device, comprising: (a) N photo electro transducer blocks each composed of k photo electro transducer elements respectively having photoreceptor faces and arranged in an array, each photo electro-transducer element being composed of a photoreceptor layer, an electrode A provided on one surface of said photoreceptor layer and an electrode B provided on the other surface of said photoreceptor layer and having a crosstalk preventing diode structure portion formed by contact of said photoreceptor layer with said electrode A and a photo electro transducing photodiode structure portion formed by contact of said photoreceptor layer with said electrode B; (b) a storage section composed of k storage elements each interconnected in series to the photo electro transducer elements in the same ordinal position in different photo electro transducer blocks; (c) a switching element block composed of k switching elements provided in correspondence with said storage elements, respectively, for performing a switching function for transferring the signals stored in said storage elements; (d) a shift register for causing the switching function of each of said k switching elements; (e) N switching elements respectively interconnected in series to said photo electro transducer blocks; and (f) a shift register for controlling the switching of said N switching elements.

Claim 29

A photo electro transducer device, comprising: (a) N photo electro transducer blocks each composed of k photo electro transducer elements respectively having photoreceptor faces and arranged in an array, each photo electro-transducer element being composed of a photoreceptor layer, an electrode A provided on one surface of said photoreceptor layer and an electrode B provided on the other surface of said photoreceptor layer and having a crosstalk preventing diode structure portion formed by contact of said photoreceptor layer with said electrode A and a photo electro transducing photodiode structure portion formed by contact of said photoreceptor layer with said electrode B; (b) a storage section composed of k storage elements each interconnected in series to the photo electro transducer elements in the same ordinal position in different photo electro transducer blocks; (c) a switching element block composed of k switching elements provided in correspondence with said storage elements, respectively, for performing a switching function for transferring the signals stored in said storage elements; (d) a shift register for causing the switching function of each of said k switching elements; (e) N switching elements respectively interconnected in series to said photo electro transducer blocks; and (f) a shift register for controlling the switching of said N switching elements.