US4380490A
Expired / Lapsed
US
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Method of preparing semiconductor surfaces
Assignee: Agere Systems LLC
•
Filing: 1981-03-27
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Granted: 1983-04-19
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Expires: 2001-03-27
Abstract
Abstract A method of treating semiconductor surfaces to produce an abrupt dielectric discontinuity between the semiconductor bulk and the ambient is described.
Inventors
- 👤 David E. Aspnes
- 👤 Ambrose A. Studna
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:26
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; C; C23; C23F; C23F3/00; H10P52/00; H10P52/40; H10P52/402
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
73 words
A method of treating a semiconductor surface comprising the steps pretreating said surface, said semiconductor being selected from the group consisting of Si, Ge, Ga-Group V compounds, and In-Group V compounds, chemomechanically polishing said surface with a mixture of a halogen and an organic solvent, said mixture consists essentially of bromine and methanol, said polishing step comprises diluting said bromine-methanol mixture from 0.05 volume percent bromine to pure methanol, and stripping residual layers.
Claim 2
Independent Claim
73 words
A method of treating a semiconductor surface comprising the steps pretreating said surface, said semiconductor being selected from the group consisting of Si, Ge, Ga-Group V compounds, and In-Group V compounds, chemomechanically polishing said surface with a mixture of a halogen and an organic solvent, said mixture consists essentially of bromine and methanol, said polishing step comprises diluting said bromine-methanol mixture from 0.05 volume percent bromine to pure methanol, and stripping residual layers.
Claim 3
Dependent Claim
21 words
A method as recited in claim 1 in which said semiconductor is selected from the group consisting of Si and Ge.
Claim 4
Dependent Claim
39 words
A method as recited in claim 2 in which said surface is Si<111> and said stripping step comprises flowing solutions of HF in methanol and NH 4 OH in H 2 O and HF in methanol over said surface.
Claim 5
Dependent Claim
29 words
A method as recited in claim 2 in which said surface is Si<110> and said stripping step comprises flowing a solution of buffered HF in methanol over said surface.
Claim 6
Dependent Claim
28 words
A method as recited in claim 2 in which said surface is Si<100> and said stripping step comprises flowing a solution of HF in methanol over said surface.
Claim 7
Dependent Claim
21 words
A method as recited in claim 1 in which said semiconductor is selected from the group consisting of Ga-Group V compounds.
Claim 8
Dependent Claim
13 words
A method as recited in claim 6 in which said compound is GaAs.
Claim 9
Dependent Claim
19 words
A method as recited in claim 7 comprising the further step of stripping residual layers with H 2 O.
Claim 10
Dependent Claim
21 words
A method as recited in claim 1 in which said semiconductor is selected from the group consisting of In-Group V compounds.
References Cited (Backward Citations)
US2619414A
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US3156596A
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US3262825A
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US3577286A
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US4184908A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-18 | 1986-10-18 | 1987-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-18 | 1990-10-18 | 1991-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-18 | 1994-10-18 | 1995-04-19 | $7700.00 | Window Closed / Lapsed |