US4385199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1981-04-10
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Granted: 1983-05-24
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Expires: 2001-04-10
Abstract
Abstract A photovoltaic cell having a hetero junction of amorphous silicon and amorphous silicon carbide has at least one of its p and n layers composed of amorphous silicon carbide of the general formula a-Si 1-x C x obtained by glow discharge decomposition of a mixture of at least one gas selected from among silane, silicon fluoride and the derivatives thereof, and at least one gas selected from among hydrocarbons, alkylsilanes, the fluorides thereof and the derivatives thereof.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:59
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
92 words
In a p-i-n junction photovoltaic cell in which the i and n layers both comprise amorphous silicon, the improvement in which the p type doped semiconductor has an electrical conductivity of at least about 10 -8 (Ohm-cm) -1 at room temperature and a thickness of about 30 A to about 300 A and is made of a substance represented by the general formula a-Si 1-x C x and wherein said p type doped layer is in ohmic contact with a transparent film electrode on the light incidence side of the photovoltaic cell.
Claim 2
Dependent Claim
92 words
In a p-i-n junction photovoltaic cell in which the i and n layers both comprise amorphous silicon, the improvement in which the p type doped semiconductor has an electrical conductivity of at least about 10 -8 (Ohm-cm) -1 at room temperature and a thickness of about 30 A to about 300 A and is made of a substance represented by the general formula a-Si 1-x C x and wherein said p type doped layer is in ohmic contact with a transparent film electrode on the light incidence side of the photovoltaic cell.
Claim 3
Dependent Claim
24 words
A photovoltaic cell as set forth in claim 1, wherein said p type doped layer has a thickness of 50 A to 200 A.
Claim 4
Dependent Claim
100 words
In a p-i-n junction photovoltaic cell in which the i layer comprises amorphous silicon, the improvement in which the n type doped semiconductor has an electrical conductivity of at least about 10 -7 (Ohm-cm) -1 at room temperature and a thickness of about 30 A to about 300 A and is made of a substance represented by the general formula a-Si 1-x C x ; the p type doped semiconductor being made of amorphous silicon, and wherein said n type doped layer is in ohmic contact with a transparent film electrode on the light incidence side of the photovoltaic cell.
Claim 5
Dependent Claim
100 words
In a p-i-n junction photovoltaic cell in which the i layer comprises amorphous silicon, the improvement in which the n type doped semiconductor has an electrical conductivity of at least about 10 -7 (Ohm-cm) -1 at room temperature and a thickness of about 30 A to about 300 A and is made of a substance represented by the general formula a-Si 1-x C x ; the p type doped semiconductor being made of amorphous silicon, and wherein said n type doped layer is in ohmic contact with a transparent film electrode on the light incidence side of the photovoltaic cell.
Claim 6
Dependent Claim
24 words
A photovoltaic cell as set forth in claim 3, wherein said n type doped layer has a thickness of 50 A to 200 A.
Claim 7
Dependent Claim
30 words
A photovoltaic cell as set forth in claim 1 or 3, wherein the atomic fraction X in said general formula is in the range of about 0.05 to about 0.95.
Claim 8
Dependent Claim
21 words
A photovoltaic cell as set forth in claim 5, wherein the atomic fraction X in said general formula is below 0.5.
References Cited (Backward Citations)
US4109271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-23 | 1986-11-22 | 1987-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-23 | 1990-11-22 | 1991-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-23 | 1994-11-22 | 1995-05-24 | $7700.00 | Window Closed / Lapsed |