US4386142A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface treatment of semiconductor materials
Assignee: Yeda Research and Development Co Ltd
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Filing: 1980-10-14
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Granted: 1983-05-31
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Expires: 2000-10-14
Abstract
Abstract A process for preparing the surface of a metal chalcogenide. The metal chalcogenide is immersed in a suitable electrolyte. The electrolyte is selected such that the metal chalcogenide is relatively stable therein in the dark, but unstable as a photoelectrode under illumination. The metal chalcogenide is connected to another electrode; and the electrode is immersed in the electrolyte. The metal chalcogenide is illuminated to photoetch the chalcogenide thereby improving the surface electronic properties of the semiconductor. A process for the surface treatment of metal chalcogenides including immersing the metal chalcogenide in an aqueous solution containing Zn and/or Cr ions.
Inventors
- 👤 Gary Hodes
- 👤 Joost Manassen
- 👤 David Cahen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:41
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; C25F; C25F3/00; C25F3/02; C25F3/12; H01M; H01M14/00; H01M14/005; Y; Y02; Y02P; Y02P20/00; Y02P20/10; Y02P20/133; Y10; Y10S; Y10S204/00; Y10S204/03
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
172 words
A process for pretreating the surface of a metal chalcogenide semiconductor body for use in a cell wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing said metal chalcogenide semiconductor body in a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide semiconductor body is relatively stable therein in the dark, but unstable as a photoelectrode under illumination; (b) providing a connection of said chalcogenide semiconductor body to an electrode; (c) immersing said electrode along with said metal chalcogenide semiconductor body in said electrolyte; (d) illuminating said metal chalcogenide semiconductor body to photoelectrochemically etch said metal chalcogenide semiconductor body, thus improving the surface electronic properties of said metal chalcogenide semiconductor body; (e) removing said metal chalcogenide semiconductor body from said electrolyte after achieving a maximum improvement of the surface electronic characteristics by the photoelectrochemical etch process of step (d); and (f) inserting the metal chalcogenide semiconductor body of step (e) into said cell as a component thereof.
Claim 2
Dependent Claim
172 words
A process for pretreating the surface of a metal chalcogenide semiconductor body for use in a cell wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing said metal chalcogenide semiconductor body in a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide semiconductor body is relatively stable therein in the dark, but unstable as a photoelectrode under illumination; (b) providing a connection of said chalcogenide semiconductor body to an electrode; (c) immersing said electrode along with said metal chalcogenide semiconductor body in said electrolyte; (d) illuminating said metal chalcogenide semiconductor body to photoelectrochemically etch said metal chalcogenide semiconductor body, thus improving the surface electronic properties of said metal chalcogenide semiconductor body; (e) removing said metal chalcogenide semiconductor body from said electrolyte after achieving a maximum improvement of the surface electronic characteristics by the photoelectrochemical etch process of step (d); and (f) inserting the metal chalcogenide semiconductor body of step (e) into said cell as a component thereof.
Claim 3
Dependent Claim
27 words
The process as defined by claim 1 wherein said metal chalcogenide semiconductor body internally comprises said electrode of step (b), being thus automatically connected to said electrode.
Claim 4
Dependent Claim
33 words
The process as defined by claim 2 wherein said metal chalcogenide semiconductor body is in the form of a powder, each particle of which comprises anodic and cathodic sites exposed to said electrolyte.
Claim 5
Dependent Claim
14 words
The process as defined by claim 1 wherein said electrolyte is a dilute acid.
Claim 6
Dependent Claim
29 words
The process as defined by claim 4 wherein said dilute acid is selected from the group consisting of H 2 SO 4 , HCl, HNO 3 and mixtures thereof.
Claim 7
Dependent Claim
48 words
The process as defined by claim 1 further comprising adding at least one of the ions selected from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(CN) 6 4- , and Fe(CN) 6 3- to said electrolyte.
Claim 8
Dependent Claim
37 words
The process as defined by claim 1 further comprising treating said metal chalcogenide semiconductor body of step (d) in a solution comprising ions of a member selected from the group consisting of zinc, chromium or mixtures thereof.
Claim 9
Dependent Claim
37 words
The process as defined by claim 1 wherein said chalcogenide semiconductor body is selected from the group consisting of cadmium, mercury or zinc chalcogenides, alloys of said cadmium, mercury or zinc chalcogenides, and compounds having chalcopyrite structure.
Claim 10
Dependent Claim
25 words
The process as defined by claim 8 wherein said chalcopyrite structure compound is selected from the group consisting of CuInS 2 and CuInSe 2 .
Claim 11
Dependent Claim
18 words
A photoelectrochemical cell comprising an electrolyte and a metal chalcogenide electrode produced by the process of claim 1.
Claim 12
Dependent Claim
16 words
The process as defined by claim 1 wherein said cell is a solid state photovoltaic cell.
Claim 13
Dependent Claim
14 words
The process as defined by claim 1 wherein said cell is a photoelectrochemical cell.
Claim 14
Dependent Claim
18 words
The process as defined by claim 1 wherein said cell is a photoelectrochemical cell comprising a polychalcogenide electrode.
Claim 15
Dependent Claim
78 words
A process for the surface treatment of metal chalcogenide semiconductor bodies wherein said chalcogenides are selected from the group consisting of sulfur, selenium, and tellurium, said process consisting of the ion treatment steps of: (a) immersing said metal chalcogenide semiconductor body in an aqueous solution comprising ions selected from the group consisting of the elements Zn, Cr, and mixtures thereof; and (b) then immersing said metal chalcogenide semiconductor body of step (a) in a solution containing chalcogenide ions.
Claim 16
Dependent Claim
78 words
A process for the surface treatment of metal chalcogenide semiconductor bodies wherein said chalcogenides are selected from the group consisting of sulfur, selenium, and tellurium, said process consisting of the ion treatment steps of: (a) immersing said metal chalcogenide semiconductor body in an aqueous solution comprising ions selected from the group consisting of the elements Zn, Cr, and mixtures thereof; and (b) then immersing said metal chalcogenide semiconductor body of step (a) in a solution containing chalcogenide ions.
Claim 17
Dependent Claim
109 words
A process for the pretreatment of metal chalcogenide semiconductor bodies, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, comprising the steps of: (a) placing said metal chalcogenide semiconductor body, electrically connected to a second electrode, in an electrolyte solution; (b) exposing the metal chalcogenide semiconductor body to light, whereby the surface of the metal chalcogenide semiconductor body is etched; (c) removing the metal chalcogenide semiconductor body from the solution after achieving a maximum improvement of the surface electronic characteristics by the etching process of step (b); and (d) placing the metal chalcogenide semiconductor body into a photoelectrochemical cell for use as a photoelectrode.
Claim 18
Dependent Claim
109 words
A process for the pretreatment of metal chalcogenide semiconductor bodies, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, comprising the steps of: (a) placing said metal chalcogenide semiconductor body, electrically connected to a second electrode, in an electrolyte solution; (b) exposing the metal chalcogenide semiconductor body to light, whereby the surface of the metal chalcogenide semiconductor body is etched; (c) removing the metal chalcogenide semiconductor body from the solution after achieving a maximum improvement of the surface electronic characteristics by the etching process of step (b); and (d) placing the metal chalcogenide semiconductor body into a photoelectrochemical cell for use as a photoelectrode.
Claim 19
Dependent Claim
55 words
The process as defined by claim 15 comprising treating the metal chalcogenide semiconductor body after step (b) is completed with ions selected from the group consisting of Ce 4+ , Sn 2+ , Zn 2+ , Cr 6+ , or mixtures thereof, by adding these metal ions to the electrolyte in which etching is achieved.
Claim 20
Dependent Claim
18 words
The process as defined by claim 15 comprising measuring the current between the two electrodes during step (b).
Claim 21
Dependent Claim
90 words
A process for the pretreatment of metal chalcogenide semiconductor bodies comprising the steps of: (a) adding metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(Cn) 6 3- , Fe(CN) 6 4- or mixtures thereof, to a suitable electrolyte solution; (b) inserting the metal chalcogenide semiconductor body to be treated into said electrolyte solution; and (c) removing the treated metal chalcogenide semiconductor body; wherein (a) and (b) are the only ion treatment steps applied to said body.
Claim 22
Dependent Claim
90 words
A process for the pretreatment of metal chalcogenide semiconductor bodies comprising the steps of: (a) adding metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(Cn) 6 3- , Fe(CN) 6 4- or mixtures thereof, to a suitable electrolyte solution; (b) inserting the metal chalcogenide semiconductor body to be treated into said electrolyte solution; and (c) removing the treated metal chalcogenide semiconductor body; wherein (a) and (b) are the only ion treatment steps applied to said body.
Claim 23
Dependent Claim
32 words
The process as defined by claim 18 wherein the ions added during step (a) are Ce 4+ and/or Sn 2+ , and wherein the metal chalcogenide semiconductor is rinsed after step (c).
Claim 24
Dependent Claim
42 words
A photoelectrochemical cell comprising a chalcogenide electrode, the chalcogenide being selected from the group consisting of sulfur, selenium, and tellurium; said electrode being photoelectrochemically etched prior to regular use in the photoelectrochemical cell; said etching taking place in a dilute-acid electrolyte solution.
Claim 25
Dependent Claim
42 words
A photoelectrochemical cell comprising a chalcogenide electrode, the chalcogenide being selected from the group consisting of sulfur, selenium, and tellurium; said electrode being photoelectrochemically etched prior to regular use in the photoelectrochemical cell; said etching taking place in a dilute-acid electrolyte solution.
Claim 26
Dependent Claim
52 words
The photoelectrochemical cell as defined by claim 20 wherein the chalcogenide metal electrode has also been treated in a solution of metal ions from the group consisting of Ce 4+ , Sn 2+ , Zn 2+ , Cr 6+ , or mixtures thereof, after being etched, but before use in said cell.
Claim 27
Dependent Claim
72 words
A photoelectrochemical cell comprising a metal chalcogenide semiconductor electrode, wherein the chalcogenide is selected from the group consisting of sulfur, selenium, or tellurium, wherein said chalcogenide semiconductor electrode has been treated in a solution of metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Fe(CN) 6 4- , Fe(CN) 6 3- or mixtures thereof prior to its use in said photoelectrochemical cell.
Claim 28
Dependent Claim
72 words
A photoelectrochemical cell comprising a metal chalcogenide semiconductor electrode, wherein the chalcogenide is selected from the group consisting of sulfur, selenium, or tellurium, wherein said chalcogenide semiconductor electrode has been treated in a solution of metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Fe(CN) 6 4- , Fe(CN) 6 3- or mixtures thereof prior to its use in said photoelectrochemical cell.
Claim 29
Dependent Claim
49 words
A solid-state photovoltaic device comprising a metal chalcogenide semiconductor, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, which semiconductor has been photoelectrochemically etched prior to use in a photoelectrochemical cell containing a dilute-acid electrolyte solution so as to maximize its surface-operating electronic characteristics.
Claim 30
Dependent Claim
49 words
A solid-state photovoltaic device comprising a metal chalcogenide semiconductor, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, which semiconductor has been photoelectrochemically etched prior to use in a photoelectrochemical cell containing a dilute-acid electrolyte solution so as to maximize its surface-operating electronic characteristics.
Claim 31
Dependent Claim
63 words
The solid-state photovoltaic device as defined by claim 23 wherein the metal chalcogenide semiconductor, after etching, and before use in a photovoltaic device, is treated in an electrolyte solution containing metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(CN) 6 4- , Fe(CN) 6 3- , or mixtures thereof.
Claim 32
Dependent Claim
72 words
A solid-state photovoltaic device comprising a metal chalcogenide semiconductor, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, or tellurium, which semiconductor has been treated in a solution of metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(CN) 6 4- , Fe(CN) 6 3- or mixtures thereof prior to its use in a photovoltaic cell.
Claim 33
Dependent Claim
72 words
A solid-state photovoltaic device comprising a metal chalcogenide semiconductor, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, or tellurium, which semiconductor has been treated in a solution of metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Cr 6+ , Fe(CN) 6 4- , Fe(CN) 6 3- or mixtures thereof prior to its use in a photovoltaic cell.
Claim 34
Dependent Claim
132 words
A process for pretreating the surface of a metal chalcogenide semiconductor powder for use in a cell wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing the said metal chalcogenide semiconductor powder in a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide powder is relatively stable therein in the dark, but unstable as a photoelectrode under illumination, and wherein said metal chalcogenide powder internally comprises an electrode, thus being automatically connected to said electrode; (b) illuminating said metal chalcogenide semiconductor powder to photoelectrochemically etch said chalcogenide semiconductor, thereby improving the surface electronic properties of said chalcogenide semiconductor; and subsequently (c) placing the chalcogenide semiconductor of step (b) in a cell for use as a cell electrode.
Claim 35
Dependent Claim
132 words
A process for pretreating the surface of a metal chalcogenide semiconductor powder for use in a cell wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing the said metal chalcogenide semiconductor powder in a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide powder is relatively stable therein in the dark, but unstable as a photoelectrode under illumination, and wherein said metal chalcogenide powder internally comprises an electrode, thus being automatically connected to said electrode; (b) illuminating said metal chalcogenide semiconductor powder to photoelectrochemically etch said chalcogenide semiconductor, thereby improving the surface electronic properties of said chalcogenide semiconductor; and subsequently (c) placing the chalcogenide semiconductor of step (b) in a cell for use as a cell electrode.
Claim 36
Dependent Claim
115 words
A metal chalcogenide electrode produced by the process comprising the steps of: (a) immersing a metal chalcogenide semiconductor body, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, into a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide semiconductor body is relatively stable therein in the dark, but unstable as a photoelectrode under illumination; (b) providing electrical connection of said metal chalcogenide semiconductor body to an electrode; (c) immersing said electrode along with said metal chalcogenide body in said electrolyte; and (d) illuminating said metal chalcogenide semiconductor body to photoelectrochemically etch said chalcogenide semiconductor body, thus improving the surface electronic properties of said metal chalcogenide semiconductor body.
Claim 37
Dependent Claim
115 words
A metal chalcogenide electrode produced by the process comprising the steps of: (a) immersing a metal chalcogenide semiconductor body, wherein said chalcogenide is selected from the group consisting of sulfur, selenium, and tellurium, into a suitable electrolyte, said electrolyte being selected such that said metal chalcogenide semiconductor body is relatively stable therein in the dark, but unstable as a photoelectrode under illumination; (b) providing electrical connection of said metal chalcogenide semiconductor body to an electrode; (c) immersing said electrode along with said metal chalcogenide body in said electrolyte; and (d) illuminating said metal chalcogenide semiconductor body to photoelectrochemically etch said chalcogenide semiconductor body, thus improving the surface electronic properties of said metal chalcogenide semiconductor body.
Claim 38
Dependent Claim
62 words
A process for the surface treatment of metal chalcogenide semiconductor bodies wherein said chalcogenides are selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing said metal chalcogenide semiconductor body in an aqueous solution of Zn ions; and (b) immersing said metal chalcogenide semiconductor body of step (a) in a solution containing chalcogenide ions.
Claim 39
Dependent Claim
62 words
A process for the surface treatment of metal chalcogenide semiconductor bodies wherein said chalcogenides are selected from the group consisting of sulfur, selenium, and tellurium, said process comprising the steps of: (a) immersing said metal chalcogenide semiconductor body in an aqueous solution of Zn ions; and (b) immersing said metal chalcogenide semiconductor body of step (a) in a solution containing chalcogenide ions.
Claim 40
Dependent Claim
73 words
A process for the pretreatment of metal chalcogenide semiconductor bodies comprising the steps of: (a) adding metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Fe(CN) 6 3- , Fe(CN) 6 4- or mixtures thereof, to a suitable electrolyte solution; (b) inserting the metal chalcogenide semiconductor body to be treated into said electrolyte solution; and (c) removing the treated metal chalcogenide semiconductor body.
Claim 41
Dependent Claim
73 words
A process for the pretreatment of metal chalcogenide semiconductor bodies comprising the steps of: (a) adding metal ions from the group consisting of Ce 4+ , Sn 2+ , Sn 4+ , Zn 2+ , Fe(CN) 6 3- , Fe(CN) 6 4- or mixtures thereof, to a suitable electrolyte solution; (b) inserting the metal chalcogenide semiconductor body to be treated into said electrolyte solution; and (c) removing the treated metal chalcogenide semiconductor body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-05-30 | 1986-11-29 | 1987-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-30 | 1990-11-29 | 1991-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-30 | 1994-11-29 | 1995-05-31 | $7700.00 | Window Closed / Lapsed |