US4388147A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for steam leaching phosphorus from phosphosilicate glass during semiconductor fabrication
Assignee: Intel Corp
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Filing: 1982-08-16
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Granted: 1983-06-14
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Expires: 2002-08-16
Abstract
Abstract A process for reducing the concentration of phosphorus in phosphosilicate glass having particular application in semiconductor fabrication is disclosed. A steam environment is provided, the temperature and pressure of which is adjusted within a predetermined range. The semiconductor device is inserted and maintained within the environment for a given time. The exposure to the steam environment effectively leaches phosphorus from the glass. The device is removed from the steam environment once a desired quantity of phosphorus has been removed.
Inventors
- 👤 Paul R. Engel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:28
CPC Classifications
C; C03; C03C; C03C15/00; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
84 words
A process for reducing the phosphorus concentration in a phosphosilicate glass, comprising the steps of: providing a steam environment; adjusting the temperature of said environment, such that said temperature lies within a predetermined range; adjusting the pressure within said environment, such that said pressure lies within a predetermined range; inserting said phosphosilicate glass into said environment; removing said glass from said environment once a desired amount of phosphorus has been leached from said glass; whereby the concentration of phosphorus in said glass is reduced.
Claim 2
Dependent Claim
84 words
A process for reducing the phosphorus concentration in a phosphosilicate glass, comprising the steps of: providing a steam environment; adjusting the temperature of said environment, such that said temperature lies within a predetermined range; adjusting the pressure within said environment, such that said pressure lies within a predetermined range; inserting said phosphosilicate glass into said environment; removing said glass from said environment once a desired amount of phosphorus has been leached from said glass; whereby the concentration of phosphorus in said glass is reduced.
Claim 3
Dependent Claim
18 words
The process as defined by claim 1 wherein said pressure lies generally within the range of 1.5-2.5 atm.
Claim 4
Dependent Claim
18 words
The process as defined by claim 2 wherein said temperature lies generally within the range of 115°-125° C.
Claim 5
Dependent Claim
19 words
The process as defined by claim 3 wherein said glass is maintained within said environment for a predetermined time.
Claim 6
Dependent Claim
14 words
The process as defined by claim 4 wherein said predetermined time is 2 hours.
Claim 7
Dependent Claim
91 words
A process for reducing the phosphorus concentration of a phosphosilicate glass deposited on a surface of an semiconductor device, comprising the steps of: providing a steam environment; adjusting the temperature of said environment, such that said temperature lies within a predetermined range; adjusting the pressure of said environment, such that said pressure lies within a predetermined range; inserting said semiconductor device into said environment; removing said semiconductor device from said environment after a predetermined time; whereby the concentration of said phosphorus in said glass may be reduced to a desired level.
Claim 8
Dependent Claim
91 words
A process for reducing the phosphorus concentration of a phosphosilicate glass deposited on a surface of an semiconductor device, comprising the steps of: providing a steam environment; adjusting the temperature of said environment, such that said temperature lies within a predetermined range; adjusting the pressure of said environment, such that said pressure lies within a predetermined range; inserting said semiconductor device into said environment; removing said semiconductor device from said environment after a predetermined time; whereby the concentration of said phosphorus in said glass may be reduced to a desired level.
Claim 9
Dependent Claim
18 words
The process or defined by claim 6 wherein said temperature lies generally within the range of 115°-125° C.
Claim 10
Dependent Claim
18 words
The process as defined by claim 7 wherein said pressure lies generally within the range of 1.5-2.5 Atm.
Claim 11
Dependent Claim
19 words
The process as defined by claim 8 wherein said predetermined time lies generally within the range of 1-3 hours.
Claim 12
Dependent Claim
18 words
The process as defined by claim 9 wherein said phosphorus in said glass concentration is lowered below 6%.
Claim 13
Dependent Claim
92 words
A process for reducing the phosphorus concentration of a phosphosilicate glass deposited on a surface of a semiconductor device, comprising the steps of: providing a steam environment; adjusting the temperature of said steam environment such that said temperature lies generally within the range of 115°-125° C.; adjusting the pressure in said environment such that said pressure lies generally within the range of 1.5-2.0 atm; inserting said semiconductor into said environment; removing said semiconductor device from said environment after a predetermined time; whereby the concentration of said phosphorus in said glass is reduced.
Claim 14
Dependent Claim
92 words
A process for reducing the phosphorus concentration of a phosphosilicate glass deposited on a surface of a semiconductor device, comprising the steps of: providing a steam environment; adjusting the temperature of said steam environment such that said temperature lies generally within the range of 115°-125° C.; adjusting the pressure in said environment such that said pressure lies generally within the range of 1.5-2.0 atm; inserting said semiconductor into said environment; removing said semiconductor device from said environment after a predetermined time; whereby the concentration of said phosphorus in said glass is reduced.
Claim 15
Dependent Claim
18 words
The process as defined by claim 11 wherein said predetermined time lies within the range of 1-3 hours.
Claim 16
Dependent Claim
22 words
The process as defined by claim 12 wherein said process is effectuated after said glass has been flowed on said semiconductor device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-13 | 1986-12-13 | 1987-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-13 | 1990-12-13 | 1991-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-13 | 1994-12-13 | 1995-06-14 | $7700.00 | Window Closed / Lapsed |