US4390394A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of structuring with metal oxide masks by reactive ion-beam etching
Assignee: Siemens AG
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Filing: 1982-01-11
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Granted: 1983-06-28
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Expires: 2002-01-11
Abstract
Abstract Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.
Inventors
- 👤 Josef Mathuni
- 👤 Karin Unger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:04
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/405; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/26; G03F7/40; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949; Y10S438/95
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
75 words
In a method of producing very fine structures in microelectronics with very thin photosensitive resists or resists which are electron- or x-ray-sensitive as masking, the improvement comprising: first applying a thin metal oxide layer over a layer to be etched and structuring such oxide layer with a resist by reactive ion-beam etching so as to attain a metal oxide mask; and dry-etching with an ion-beam the layer to be etched through said metal oxide mask.
Claim 2
Dependent Claim
75 words
In a method of producing very fine structures in microelectronics with very thin photosensitive resists or resists which are electron- or x-ray-sensitive as masking, the improvement comprising: first applying a thin metal oxide layer over a layer to be etched and structuring such oxide layer with a resist by reactive ion-beam etching so as to attain a metal oxide mask; and dry-etching with an ion-beam the layer to be etched through said metal oxide mask.
Claim 3
Dependent Claim
44 words
In a method as defined in claim 1 wherein a fluorocarbon is utilized as an etching gas for structuring said metal oxide layer selectively relative to a resist selected for the group consisting of a photosensitive resist, an electron-sensitive resist and a x-ray-sensitive resist.
Claim 4
Dependent Claim
12 words
A method as defined in claim 2 wherein said fluorocarbon is trifluoromethane.
Claim 5
Dependent Claim
34 words
In a method as defined in claim 1 wherein during the work step of structuring said metal oxide layer, the dry etching of the layer to be etched occurs with a suitable etching gas.
Claim 6
Dependent Claim
15 words
In a method as defined in claim 4 wherein said suitable etching gas is argon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-27 | 1986-12-27 | 1987-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-27 | 1990-12-27 | 1991-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-27 | 1994-12-27 | 1995-06-28 | $7700.00 | Window Closed / Lapsed |