US4393391A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
Assignee: Supertex LLC
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Filing: 1980-06-16
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Granted: 1983-07-12
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Expires: 2000-06-16
Abstract
Abstract A semiconductor device providing improved utilization of semiconductor surface area by enhancing the current carrying capability per unit area. The improvement arises from contouring the surface in the conductive channel region of the device so that the current carrying channel is wider than the plane surface that it occupies. This morphology may be achieved by forming troughs having optional rectangular, "U", or "V" shapes; the troughs run parallel to the conductive channel current flow. The improvement is especially useful for MOS and power MOS transistors, and is applicable to DMOS transistors as well as conventional MOS transistors.
Inventors
- 👤 Richard A. Blanchard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/65; H10D30/658; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/292; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513; H10D30/66; H10D30/668
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A semiconductor device comprising in combination: a substrate having a substantially plane first major surface; first and second spaced regions of a first conductivity type formed in said surface; a third region of a second conductivity type opposite said first conductivity type between said first and said second regions at said surface; a plurality of spaced groove regions in said major surface, said groove regions being separated by portions of said substrate coplanar with said first major surface, and said grooves extending into each of said first, second, and third regions; a thin insulating layer over said third region both in said grooves and across surface portions coplanar with said first major surface; and gate means over said insulating layer for controlling a conductive surface channel between said first and second regions in said grooves and at said first major surface.
Claim 2
Dependent Claim
141 words
A semiconductor device comprising in combination: a substrate having a substantially plane first major surface; first and second spaced regions of a first conductivity type formed in said surface; a third region of a second conductivity type opposite said first conductivity type between said first and said second regions at said surface; a plurality of spaced groove regions in said major surface, said groove regions being separated by portions of said substrate coplanar with said first major surface, and said grooves extending into each of said first, second, and third regions; a thin insulating layer over said third region both in said grooves and across surface portions coplanar with said first major surface; and gate means over said insulating layer for controlling a conductive surface channel between said first and second regions in said grooves and at said first major surface.
Claim 3
Dependent Claim
22 words
The device of claim 1, wherein said third region surrounds only one of said first and said second regions at said surface.
Claim 4
Dependent Claim
13 words
The device of claim 1, wherein said grooves are substantially "V"-shaped in cross-section.
Claim 5
Dependent Claim
28 words
The device of claim 1, wherein said gate means comprises a single electrically conductive member having a plurality of recessed portions extending between said first and second regions.
Claim 6
Dependent Claim
22 words
The device of claim 1, wherein said insulator has substantially the same thickness in said groove means and over said surface portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-11 | 1987-01-10 | 1987-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-11 | 1991-01-10 | 1991-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-11 | 1995-01-10 | 1995-07-12 | $7700.00 | Window Closed / Lapsed |