US4400710A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1980-11-25
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Granted: 1983-08-23
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Expires: 2000-11-25
Abstract
Abstract A semiconductor device having its carrier-injecting region formed with a Schottky structure, and arranged so that the current flowing through the Schottky barrier by virtue of tunnel effect is controlled by a controlling electrode to thereby control the drain or collector or anode current. Thus, this device has a large current density and a large current gain. This device can be used not only as a discrete one, but also it is quite suitable when applied to integrated circuits.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Tadahiro Ohmi
- 👤 Keishiro Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:26
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D12/00; H10D12/211; H10D12/212; H10D30/00; H10D30/80; H10D64/649
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
160 words
A semiconductor device, comprising: a first lightly-doped semiconductor region of a first conductivity type and having a principal surface; a second highly-doped semiconductor region of a second conductivity type opposite to said first conductivity type formed at said principal surface of said first semiconductor region to form a pn junction therewith and surrounding a portion of said first semiconductor region to define a current channel region therein: a Schottky metal electrode connected to that part of said principal surface corresponding to said current channel region of said semiconductor region; and a carrier-collecting highly-doped semiconductor region disposed adjacent to said first semiconductor region on that side of said first semiconductor region located opposite to said principal surface for extracting majority carriers injected from said Schottky metal electrode, through said channel region said second semiconductor region being responsive to forward bias signals applied thereto, said majority carriers injected from said Schottky metal electrode increasing with an increase of said forward bias voltage.
Claim 2
Dependent Claim
160 words
A semiconductor device, comprising: a first lightly-doped semiconductor region of a first conductivity type and having a principal surface; a second highly-doped semiconductor region of a second conductivity type opposite to said first conductivity type formed at said principal surface of said first semiconductor region to form a pn junction therewith and surrounding a portion of said first semiconductor region to define a current channel region therein: a Schottky metal electrode connected to that part of said principal surface corresponding to said current channel region of said semiconductor region; and a carrier-collecting highly-doped semiconductor region disposed adjacent to said first semiconductor region on that side of said first semiconductor region located opposite to said principal surface for extracting majority carriers injected from said Schottky metal electrode, through said channel region said second semiconductor region being responsive to forward bias signals applied thereto, said majority carriers injected from said Schottky metal electrode increasing with an increase of said forward bias voltage.
Claim 3
Dependent Claim
52 words
A semiconductor device according to claim 1, wherein said channel region has such impurity concentration and width as to insure that a portion of said channel region located in a foreground of said Schottky metal electrode is substantially covered by depletion layers growing into said channel region from said Schottky metal electrode.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 2, wherein said channel impurity concentration (N) and said channel width (2a) are selected to satisfy: N×(2a) 2 ≲1×10 8 cm -1 .
Claim 5
Dependent Claim
53 words
A semiconductor device according to claim 2, wherein said channel region has a broad width (2a) and a low impurity concentration, and said second semiconductor region has a shallow depth into said first semiconductor region, and the potential distribution in said channel region is sensitive to the voltage of said carrier-collecting semiconductor region.
Claim 6
Dependent Claim
48 words
A semiconductor device according to claim 2, wherein said channel region has a small width and said second semiconductor region has a great depth into said first semiconductor region and the potential distribution in said channel region is substantially insensitive to the voltage of said carrier-collecting semiconductor region.
Claim 7
Dependent Claim
29 words
A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said second semiconductor region has an impurity concentration of at least 1×10 18 cm -3 .
Claim 8
Dependent Claim
33 words
A semiconductor device according to claim 1, 2, 3, 4 or 5 wherein said metal electrode is a metal selected from a group of metals consisting of Pt, Ti, Ta, W and Mo.
Claim 9
Dependent Claim
39 words
A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said Schottky metal electrode comprises a layer formed of a silicide of a metal selected from the group consisting of Pt, Ti, Ta, W, and Mo.
Claim 10
Dependent Claim
28 words
A semiconductor device according to claim 1, 2, 3, 4 or 5 further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region.
Claim 11
Dependent Claim
33 words
A semiconductor device according to claim 1, 2, 3, 4 or 5 wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.
Claim 12
Dependent Claim
42 words
A semiconductor device according to claim 1, wherein said carrier-collecting semiconductor region is a third highly-doped semiconductor region having the same conductivity type as that of said second semiconductor region and an impurity concentration higher than that of said first semiconductor region.
Claim 13
Dependent Claim
133 words
A semiconductor device according to claim 1, wherein said carrier-collecting region includes alternately disposed first and second portions, said first portions having the same conductivity type as that of said second semiconductor region and an impurity concentration higher than that of said first semiconductor region, and said second portions having the same conductivity type as that of said first semiconductor region and an impurity concentration higher than that of said first semiconductor region, and a third portion disposed between said first and second portions and said first semiconductor region, said third portion comprising a thin fifth semiconductor region having the same conductivity type as that of said first semiconductor region and an impurity concentration higher than that of said first semiconductor region but lower than that of said carrier collecting region second portions.
Claim 14
Dependent Claim
26 words
A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 15
Dependent Claim
21 words
A semiconductor device according to claim 6 wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 16
Dependent Claim
21 words
A semiconductor device according to claim 7 wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 18
Dependent Claim
21 words
A semiconductor device according to claim 9, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 19
Dependent Claim
21 words
A semiconductor device according to claim 10, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type.
Claim 20
Dependent Claim
28 words
A semiconductor device according to claim 6, wherein said metal electrode is a metal selected from a group of metals consisting of Pt, Ti, Ta, W and Mo.
Claim 21
Dependent Claim
34 words
A semiconductor device according to claim 6, wherein said Schottky metal electrode comprises a layer formed for a silicide of a metal selected from the group consisting of Pt, Ti, Ta, W, and Mo.
Claim 22
Dependent Claim
23 words
A semiconductor device according to claim 6, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semicondutor region.
Claim 23
Dependent Claim
23 words
A semiconductor device according to claim 7, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region.
Claim 24
Dependent Claim
23 words
A semiconductor device according to claim 8, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region.
Claim 25
Dependent Claim
28 words
A semiconductor device according to claim 6, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.
Claim 26
Dependent Claim
28 words
A semiconductor device according to claim 7, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.
Claim 27
Dependent Claim
28 words
A semiconductor device according to claim 8, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.
Claim 28
Dependent Claim
28 words
A semiconductor device according to claim 9, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-22 | 1987-02-21 | 1987-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-22 | 1991-02-21 | 1991-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-22 | 1995-02-21 | 1995-08-23 | $7700.00 | Window Closed / Lapsed |