US4404661A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1980-10-31
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Granted: 1983-09-13
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Expires: 2000-10-31
Abstract
Abstract A MOSRAM type semiconductor memory circuit in which the storage charge per bit cell is increased without a corresponding increase in per bit chip area. A potential decision circuit is provided for each bit line in the memory for setting a potential on the corresponding bit line. A boost circuit is provided for increasing the potential on each bit line in accordance with the operation of the potential decision circuit. One boost circuit may be provided for each bit line. Alternatively, a boost circuit may be provided common to all bit lines or a plurality of bit lines in the memory circuit.
Inventors
- 👤 Yasuji Nagayama
- 👤 Makoto Taniguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:16
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4094
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
144 words
A semiconductor memory circuit of the MOSRAM type comprising: a plurality of bit lines; a sense amplifier provided for each bit line for sensing a state of a storage cell selectively coupled to said bit line and for setting said bit line to one of first and second predetermined potentials in response to the sensed state; a potential decision circuit provided for each bit line for sensing the potential on the corresponding bit line set by said sense amplifier; and a boost circuit operating in response to an output from said potential decision circuit for increasing a potential on the corresponding bit line above a maximum supply potential when said potential decision circuit senses the presence of a predetermined one of said first and second potentials on said bit line for recharging said selected storage cell at a potential above said maximum supply potential.
Claim 2
Dependent Claim
144 words
A semiconductor memory circuit of the MOSRAM type comprising: a plurality of bit lines; a sense amplifier provided for each bit line for sensing a state of a storage cell selectively coupled to said bit line and for setting said bit line to one of first and second predetermined potentials in response to the sensed state; a potential decision circuit provided for each bit line for sensing the potential on the corresponding bit line set by said sense amplifier; and a boost circuit operating in response to an output from said potential decision circuit for increasing a potential on the corresponding bit line above a maximum supply potential when said potential decision circuit senses the presence of a predetermined one of said first and second potentials on said bit line for recharging said selected storage cell at a potential above said maximum supply potential.
Claim 3
Dependent Claim
18 words
The semiconductor memory circuit of claim 1 wherein one said boost circuit is provided for each bit line.
Claim 4
Dependent Claim
19 words
The semiconductor memory circuit of claim 1 wherein said boost circuit is provided common to all said bit lines.
Claim 5
Dependent Claim
209 words
The semiconductor memory circuit of any of claims 1-3 wherein said potential decision circuit comprises a first MOST transistor having a first signal electrode coupled to a corresponding bit line and a gate electrode coupled to a bias voltage source; a second MOST transistor having a gate electrode coupled to a second signal electrode of said first MOST transistor and a first signal electrode coupled to a first connection point; a third MOST transistor having a first signal electrode coupled to said first signal electrode of said first MOST transistor and a gate electrode coupled to a second signal electrode of said second MOST transistor; and a first capacitor having a first terminal coupled to said second signal electrode of said second MOST transistor and a second terminal coupled to a second connection point; and wherein said boost circuit comprises a fourth MOST transistor having a first signal electrode coupled to a second signal electrode of said third MOST transistor and a second signal electrode and a gate electrode coupled to said bias voltage source; a second capacitor coupled between said first electrode of said fourth MOST transistor and ground; and a third capacitor coupled between said first signal electrode of said MOST transistor and a third connection point.
Claim 6
Dependent Claim
165 words
The semiconductor memory circuit of any of claims 1-3 wherein said potential decision circuit comprises a first MOST transistor having a first signal electrode coupled to a corresponding bit line and a gate electrode coupled to a bias voltage source; a second MOST transistor having a first signal electrode coupled to said bit line and a gate electrode coupled to a second signal electrode of said first MOST transistor; and a first capacitor having a first terminal coupled to said gate of said second MOST transistor and a second terminal coupled to a first connection point; and wherein said boost circuit comprises a third MOST transistor having a first signal electrode coupled to a second signal electrode of said second MOST transistor and a second signal electrode and gate electrode coupled to said bias voltage source; and a second capacitor having a first terminal coupled to said first signal electrode of said third MOST transistor and a second terminal coupled to a second connection point.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |