US4414242A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating a semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1982-11-24
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Granted: 1983-11-08
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Expires: 2002-11-24
Abstract
Abstract A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.
Inventors
- 👤 Tadashi Nishimura
- 👤 Yoji Mashiko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 22:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10D; H10D86/00; H10D86/01; H10D86/03; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2924; H10P14/2925; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3818; H10P14/382; H10P34/00; H10P34/40; H10P34/42; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1912; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
55 words
A process for producing a semiconductor device, comprising; forming an island of a polycrystalline or amorphous semiconductor layer on, and surrounding the same by, an insulator, locally heating said layer to fuse the same to form a recrystallized structure and forming at least one ridge on the underlying insulator before the formation of said layer.
Claim 2
Dependent Claim
55 words
A process for producing a semiconductor device, comprising; forming an island of a polycrystalline or amorphous semiconductor layer on, and surrounding the same by, an insulator, locally heating said layer to fuse the same to form a recrystallized structure and forming at least one ridge on the underlying insulator before the formation of said layer.
Claim 3
Dependent Claim
17 words
A process according to claim 1, wherein said heating is effected with a laser or electron beam.
Claim 4
Dependent Claim
24 words
A process according to claim 1, wherein said local heating is effected by moving said laser beam or electron beam relative to said layer.
Claim 5
Dependent Claim
40 words
A process for producing a semiconductor device, comprising; providing an insulating substrate and forming at least one ridge therein, providing an island of polycrystalline or amorphous semiconductor material with an insulator, and heating said semiconductor material to allow recrystallization thereof.
Claim 6
Dependent Claim
40 words
A process for producing a semiconductor device, comprising; providing an insulating substrate and forming at least one ridge therein, providing an island of polycrystalline or amorphous semiconductor material with an insulator, and heating said semiconductor material to allow recrystallization thereof.
Claim 7
Dependent Claim
23 words
A process according to claim 4, including controlling the shape of said ridge to thereby control the planes of crystal growth during recrystallinzation.
Claim 8
Dependent Claim
17 words
A process according to claim 4, wherein said heating is effected with a laser or electron beam.
Claim 9
Dependent Claim
19 words
A process acording to claim 4, a plurality of ridges being formed in said substrate by etching the same.
Claim 10
Dependent Claim
39 words
A process according to claim 7, said heating being locally effected by means of a scanning high-energy beam of radiation, said ridges being formed at intervals such that said intervals are smaller than a spot size of said beam.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-07 | 1987-05-09 | 1987-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-07 | 1991-05-09 | 1991-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-07 | 1995-05-09 | 1995-11-08 | $7700.00 | Window Closed / Lapsed |