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US4415916A
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Germanium semiconducting radiation detector with phosphorus implanted n+ contact
Assignee: Forschungszentrum Jülich
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Filing: 1980-06-17
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Granted: 1983-11-15
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Expires: 2000-06-17
Abstract
Abstract Germanium detectors usable for charged particle spectroscopy and capable of enduring overvoltage without impairment are produced by first implanting phosphorus ions of high energy in a small dose and then implanting more phosphorus ions of lower energy in a large dose. The low energy ions reduce surface resistance without impairing the improved properties of withstanding overvoltage that are provided by the high energy implantation. The p + contact is provided by boron ion implantation in a conventional manner. "Dead zones" on both sides have been found to have a very small thickness of 0.3 μm.
Inventors
- 👤 Davor Protic
- 👤 Georg Riepe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:39
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/292
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A semiconductor nuclear radiation detector of the PIN diode type operable up to field intensities of more than 2500 V per cm, comprising a body of high-purity germanium and an n + contact region produced therein by a first high energy implantation doping with phosphorus ions of an energy of at least 25 kV at a dose magnitude below 10 14 ions/cm 2 followed by a second implantation of phosphorus ions of a dose of at least 10 14 ions/cm 2 and of an energy level not exceeding 20 kV, said body having an annealed lattice structure at least in the deep zones of high energy implantation, and the phosphorus concentration in the region of said first implantation being at least 10 3 times as high as that of the substrate material.
Claim 2
Dependent Claim
132 words
A semiconductor nuclear radiation detector of the PIN diode type operable up to field intensities of more than 2500 V per cm, comprising a body of high-purity germanium and an n + contact region produced therein by a first high energy implantation doping with phosphorus ions of an energy of at least 25 kV at a dose magnitude below 10 14 ions/cm 2 followed by a second implantation of phosphorus ions of a dose of at least 10 14 ions/cm 2 and of an energy level not exceeding 20 kV, said body having an annealed lattice structure at least in the deep zones of high energy implantation, and the phosphorus concentration in the region of said first implantation being at least 10 3 times as high as that of the substrate material.
Claim 3
Dependent Claim
36 words
A semiconductor detector as defined in claim 1 in which said first phosphorus implantation is of an energy level between 25 and about 40 kV and of a dose of about 10 13 ions/cm 2 .
Claim 4
Dependent Claim
25 words
A semiconductor detector as defined in claim 1, or 2 in which a p+ contact region is provided in said body by boron ion implantation.
Claim 5
Dependent Claim
33 words
A semiconductor detector as defined in claim 3 in which said boron implantation is provided by a dose of about 10 14 ions/cm 2 of an ion energy level of about 20 kV.
Claim 6
Dependent Claim
25 words
A semiconductor detector as defined in claim 3 which has "dead zones" on both sides, which zones each have a thickness less than 0.5 μm.
Claim 7
Independent Claim
100 words
A method of making a durable and voltage-withstanding n + contact region on the surface of a body of high-purity germanium for enabling said body to be usable in charged particle spectroscopy which comprises the steps of: first subjecting said body to phosphorus ion implantation of a dose less than 10 14 ions/cm 2 at an energy level of at least 25 kV; and then subjecting said body to phosphorus ion implantation at an energy level below 20 kV and of a dose exceeding 10 14 ions/cm 2 , followed by annealing at a temperature of at least 300° C.
Claim 8
Independent Claim
100 words
A method of making a durable and voltage-withstanding n + contact region on the surface of a body of high-purity germanium for enabling said body to be usable in charged particle spectroscopy which comprises the steps of: first subjecting said body to phosphorus ion implantation of a dose less than 10 14 ions/cm 2 at an energy level of at least 25 kV; and then subjecting said body to phosphorus ion implantation at an energy level below 20 kV and of a dose exceeding 10 14 ions/cm 2 , followed by annealing at a temperature of at least 300° C.
Claim 9
Dependent Claim
33 words
Method as defined in claim 6 in which said first ion implantation step is of a dose of about 10 13 ions/cm 2 and of an energy level between 25 and 40 kV.
Claim 10
Dependent Claim
43 words
Method as defined in claim 6 or 7 in which said first ion implantation step is of a dose which is as small as practically possible for producing a phosphorus concentration at least 10 3 as high as that of the substrate material.
Claim 11
Dependent Claim
18 words
Method as defined in claim 6 or 7 in which said annealing is performed at about 400° C.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-14 | 1987-05-16 | 1987-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-14 | 1991-05-16 | 1991-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-14 | 1995-05-16 | 1995-11-15 | $7700.00 | Window Closed / Lapsed |