US4426657A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for producing same
Assignee: Fujitsu Ltd
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Filing: 1981-02-13
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Granted: 1984-01-17
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Expires: 2001-02-13
Abstract
Abstract A semiconductor device having a protective polyimide film layer for preventing α-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.
Inventors
- 👤 Akira Abiru
- 👤 Masahiro Sugimoto
- 👤 Juro Inomata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6342; H10P14/6346; H10W; H10W42/00; H10W42/20; H10W42/25; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/47; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/90; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
84 words
A semiconductor device comprising a substrate having at least one semiconductor element for forming an integrated circuit, said substrate being surrounded by other members of said semiconductor device, the surface of at least a region of said substrate where each said semiconductor element is formed being coated at least in part with a polyimide film having incorporated therein finely divided silicon particles of high purity, wherein each said semiconductor element is protected by said film from alpha radiation from any of said other members.
Claim 2
Dependent Claim
84 words
A semiconductor device comprising a substrate having at least one semiconductor element for forming an integrated circuit, said substrate being surrounded by other members of said semiconductor device, the surface of at least a region of said substrate where each said semiconductor element is formed being coated at least in part with a polyimide film having incorporated therein finely divided silicon particles of high purity, wherein each said semiconductor element is protected by said film from alpha radiation from any of said other members.
Claim 3
Dependent Claim
40 words
A semiconductor according to claim 1, wherein the polyimide film is comprised of, based on the weight of the polyimide film, 10 to 50% by weight of polyimide and 50 to 90% by weight of the finely divided silicon particles.
Claim 4
Dependent Claim
22 words
A semiconductor device according to claim 1 or 2, wherein the polyimide film has a thickness of about 20 to 100 microns.
Claim 5
Dependent Claim
26 words
A semiconductor device according to claim 1 or 2, wherein the finely divided silicon particles have an average particle size of about 1 to 10 microns.
Claim 6
Dependent Claim
14 words
The device of claim 1 or 2, comprising a plurality of the semiconductor elements.
Claim 7
Dependent Claim
12 words
The device of claim 3, comprising a plurality of the semiconductor elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-16 | 1987-07-18 | 1988-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-16 | 1991-07-18 | 1992-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-16 | 1995-07-18 | 1996-01-17 | $7700.00 | Window Closed / Lapsed |