US4436583A
Expired / Lapsed
US
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Selective etching method of polyimide type resin film
Assignee: Hitachi Ltd
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Filing: 1982-11-30
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Granted: 1984-03-13
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Expires: 2002-11-30
Abstract
Abstract Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.
Inventors
- 👤 Atsushi Saiki
- 👤 Takao Iwayanagi
- 👤 Saburo Nonogaki
- 👤 Takashi Nishida
- 👤 Seiki Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:32
CPC Classifications
H; H10; H10P; H10P50/00; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/0346; H05K3/00; H05K3/0011; H05K3/0017
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
A selective etching method of a polyimide type resin film, comprising forming a film made of negative type photoresist material using an unsaturated ketone polymer as a base resin on a polyimide type resin film, exposing a predetermined portion of said film, developing said film to obtain an etching mask having a predetermined pattern and etching said resin film by use of a mixed solution of 20 to 40 vol% of hydrazine hydrate and the balance of polyamine as the etching solution.
Claim 2
Dependent Claim
82 words
A selective etching method of a polyimide type resin film, comprising forming a film made of negative type photoresist material using an unsaturated ketone polymer as a base resin on a polyimide type resin film, exposing a predetermined portion of said film, developing said film to obtain an etching mask having a predetermined pattern and etching said resin film by use of a mixed solution of 20 to 40 vol% of hydrazine hydrate and the balance of polyamine as the etching solution.
Claim 3
Dependent Claim
58 words
The selective etching method of a polyimide type resin film as defined in claim 1 wherein said unsaturated ketone polymer is expressed by the following general formula ##STR3## wherein R 1 is H or an alkyl group of up to 4 carbon atoms and R 2 is an alkyl or phenyl group of up to 4 carbon atoms.
Claim 4
Dependent Claim
37 words
The selective etching method of a polyimide type resin film as defined in claim 1 wherein said unsaturated ketone polymer is at least one member selected from the group consisting of polymethylisopropenylketone, polyethylisopropenylketone, polymethylvinylketone, polyvinylphenylketone and polyethylvinylketone.
Claim 5
Dependent Claim
37 words
The selective etching method of a polyimide type resin film as defined in any of claims 1 through 3 wherein said photoresist material is prepared by adding a bisazide type photosensitive reagent to said unsaturated ketone polymer.
Claim 6
Dependent Claim
53 words
The selective etching method of a polyimide type resin film as defined in any of claims 1 through 3 wherein said photoresist material is prepared by adding at least one member selected from the group consisting of 2,6-di(4'-azidebenzal)-4-methylcyclohexanone, 4,4'-diazidenphenylthioether, 4,4'-diazidestilben, 4,4'-diazidechalcon, 4,4'-diazidebenzalacetone and 2,6-di(4-azidebenzal)cyclohexanone as said photosensitive reagent to said unsaturated ketone polymer.
Claim 7
Dependent Claim
32 words
The selective etching method of a polyimide type resin film as defined in claim 4 wherein the concentration of said photosensitive reagent in said photoresist material is from 5 to 25 wt%.
Claim 8
Dependent Claim
30 words
The selective etching method of a polyimide type resin film as defined in any of claims 1 through 3 wherein said polyamide is ethylenediamine, trimethylenediamine, tetramethylenediamine, hexamethylenediamine, diethylenetriamine or triethylenetetramine.
Claim 9
Dependent Claim
20 words
The selective etching method of a polyimide type resin film as defined in claim 7 wherein said polyamine is ethylenediamine.
References Cited (Backward Citations)
US3833436A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |