US4443533A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoresist curing method
Assignee: XENON Corp 66 INDUSTRIAL WAY WILMINGTON MA A CORP OF MA
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Filing: 1982-07-23
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Granted: 1984-04-17
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Expires: 2002-07-23
Abstract
Abstract A method of post-development cure of photoresists is described wherein the substrate carrying the developed photoresist is positioned within 6.0 cm of a flash lamp and flashed with visible light to effect a cure in 30 seconds or less.
Inventors
- 👤 C. Richard Panico
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:57
CPC Classifications
B; B05; B05D; B05D3/00; B05D3/06; B01; B01J; B01J19/00; B01J19/08; B01J19/087; B01J19/12; B01J19/122; B01J19/123; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/2024
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
117 words
In a method of forming optically delineated circuits comprising applying a photoresist to a substrate; exposing said photoresist to a photoexposure of a circuit pattern; developing said photoresist by washing away the unexposed portions; curing the remaining photoresist; and treating the exposed substrate surface to provide electrical circuits, the combination of step to produce said curing comprising: (a) positioning said substrate so that the surface of the remaining photoresist is spaced in the range of 6.0 mm to 6.0 cm from the envelope of a flash arc lamp; and, (b) discharging at least one electrical pulse through said lamp with a current density in said lamp in the range of 400 to 2000 amperes per square centimeter.
Claim 2
Dependent Claim
117 words
In a method of forming optically delineated circuits comprising applying a photoresist to a substrate; exposing said photoresist to a photoexposure of a circuit pattern; developing said photoresist by washing away the unexposed portions; curing the remaining photoresist; and treating the exposed substrate surface to provide electrical circuits, the combination of step to produce said curing comprising: (a) positioning said substrate so that the surface of the remaining photoresist is spaced in the range of 6.0 mm to 6.0 cm from the envelope of a flash arc lamp; and, (b) discharging at least one electrical pulse through said lamp with a current density in said lamp in the range of 400 to 2000 amperes per square centimeter.
Claim 3
Dependent Claim
23 words
In the method according to claim 1, the combination wherein said discharging is at the rate of one to ten pulses per second.
Claim 4
Dependent Claim
24 words
In the method according to claim 2, the combination wherein said discharging takes place over a time interval of one-half second to thirty seconds.
Claim 5
Dependent Claim
50 words
In the method according to claim 1, the combination wherein said lamp is filled with xenon gas and the fill pressure of said gas and the pulse length at which the lamp is operated are designed to emphasize output radiation in the visible spectrum with wavelengths longer than 300 nanometers.
Claim 6
Dependent Claim
23 words
In the method according to claim 1, the combination wherein said substrate is circular and said lamp is shaped in a flat spiral.
Claim 7
Dependent Claim
35 words
In a method according to claim 1, wherein said applying comprises applying a photoresist to a wafer of semiconductor crystal and said exposing comprises exposing said photoresist to a photoexposure of iterated integrated circuit patterns.
References Cited (Backward Citations)
US4167669A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-17 | 1987-10-17 | 1988-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-17 | 1991-10-17 | 1992-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-17 | 1995-10-17 | 1996-04-17 | $7700.00 | Window Closed / Lapsed |