US4446194A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual layer passivation
Assignee: NXP USA Inc
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Filing: 1982-06-21
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Granted: 1984-05-01
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Expires: 2002-06-21
Abstract
Abstract When multilayer-metal electronic devices are heated, voids can form in the metal layers. Void formation is avoided by using a double dielectric layer as the interlayer dielectric. The double layer has a first oxide layer portion in contact with the first metal which is formed by plasma assisted chemical vapor deposition, and a second oxide layer portion formed by other means. The plasma formed oxide layer portion is believed to be in compressive stress relative to the substrate.
Inventors
- 👤 Jon Candelaria
- 👤 Kurt S. Heidinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
75 words
In a process for fabricating electronic devices wherein a first metal layer is formed on a first dielectric layer on a substrate, an interlayer dielectric is formed on said first metal layer, and a second metal layer is formed on said interlayer dielectric, the improvement comprising, forming said interlayer dielectric by depositing on said first metal layer a plasma derived oxide and overlying said plasma derived oxide with an other oxide formed by other means.
Claim 2
Dependent Claim
75 words
In a process for fabricating electronic devices wherein a first metal layer is formed on a first dielectric layer on a substrate, an interlayer dielectric is formed on said first metal layer, and a second metal layer is formed on said interlayer dielectric, the improvement comprising, forming said interlayer dielectric by depositing on said first metal layer a plasma derived oxide and overlying said plasma derived oxide with an other oxide formed by other means.
Claim 3
Dependent Claim
32 words
The process of claim 1 wherein said depositing step comprises depositing said plasma derived oxide by plasma enhanced chemical vapor deposition and wherein said other oxide is formed by chemical vapor deposition.
Claim 4
Dependent Claim
30 words
The process of claim 2 wherein said first dielectric layer comprises silicon nitride, said plasma derived oxide comprises silicon oxide, and said other oxide comprises a phosphorous doped silicon oxide.
Claim 5
Dependent Claim
98 words
In a process for fabricating electronic devices wherein a first metal layer is formed on a first dielectric layer on a substrate, an interlayer dielectric is formed on said first metal layer, and a second metal layer is formed on said interlayer dielectric, the improvement comprising, forming said interlayer dielectric by depositing on said first metal layer a first oxide exhibiting intrinsic compressive stress relative to said substrate, and covering said first layer by a second layer not exhibiting substantial intrinsic compressive stress relative to said substrate and formed by a different process than said first oxide layer.
Claim 6
Dependent Claim
98 words
In a process for fabricating electronic devices wherein a first metal layer is formed on a first dielectric layer on a substrate, an interlayer dielectric is formed on said first metal layer, and a second metal layer is formed on said interlayer dielectric, the improvement comprising, forming said interlayer dielectric by depositing on said first metal layer a first oxide exhibiting intrinsic compressive stress relative to said substrate, and covering said first layer by a second layer not exhibiting substantial intrinsic compressive stress relative to said substrate and formed by a different process than said first oxide layer.
Claim 7
Dependent Claim
20 words
The process of claim 4 wherein said depositing step comprises depositing said first oxide by plasma enhanced chemical vapor deposition.
Claim 8
Dependent Claim
29 words
The process of claim 5 wherein said first dielectric layer comprises silicon nitride, said first oxide comprises silicon oxide, and said second oxide comprises a phosphorous doped silicon oxide.
Claim 9
Dependent Claim
69 words
A process for fabricating electronic devices on a substrate comprising: forming on said substrate a first dielectric layer; forming on said first dielectric layer a first metal layer; forming on said first metal layer a second dielectric layer having a predetermined compressive stress; forming on said second dielectric layer a third dielectric layer substantially free of compressive stress; and forming on said second dielectric layer a second metal layer.
Claim 10
Dependent Claim
69 words
A process for fabricating electronic devices on a substrate comprising: forming on said substrate a first dielectric layer; forming on said first dielectric layer a first metal layer; forming on said first metal layer a second dielectric layer having a predetermined compressive stress; forming on said second dielectric layer a third dielectric layer substantially free of compressive stress; and forming on said second dielectric layer a second metal layer.
Claim 11
Dependent Claim
41 words
The process of claim 7 wherein said first forming step comprises forming a first dielectric layer having an outer surface of silicon nitride, and said third forming step comprises forming said second dielectric layer by plasma assisted deposition of silicon oxide.
Claim 12
Dependent Claim
19 words
The process of claim 8 wherein said second forming step comprises forming said first metal from an aluminum alloy.
Claim 13
Dependent Claim
71 words
A process for fabricating electronic devices on a substrate comprising: forming on said substrate a first dielectric layer; forming on said first dielectric layer a first metal layer; forming on said first metal layer a substantially pure oxide layer by plasma assisted chemical vapor deposition; forming on said substantially pure oxide layer a doped oxide layer by chemical vapor deposition; and forming on said doped oxide layer a second metal layer.
Claim 14
Dependent Claim
71 words
A process for fabricating electronic devices on a substrate comprising: forming on said substrate a first dielectric layer; forming on said first dielectric layer a first metal layer; forming on said first metal layer a substantially pure oxide layer by plasma assisted chemical vapor deposition; forming on said substantially pure oxide layer a doped oxide layer by chemical vapor deposition; and forming on said doped oxide layer a second metal layer.
Claim 15
Dependent Claim
42 words
The process of claim 8 or 10 further comprising forming on said second metal layer a passivation layer comprising a first portion formed by plasma assisted deposition of silicon oxide and a second portion formed by chemical vapor deposition of silicon oxide.
Claim 16
Dependent Claim
21 words
An electronic device fabricated according to the process of claim 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-01 | 1987-10-31 | 1988-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-01 | 1991-10-31 | 1992-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-01 | 1995-10-31 | 1996-05-01 | $7700.00 | Window Closed / Lapsed |