US4457951A
Expired / Lapsed
US
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Etch solution and method
Assignee: AT&T Inc
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Filing: 1983-10-28
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Granted: 1984-07-03
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Expires: 2003-10-28
Abstract
Abstract In manufacturing a circuit which includes the step of etching a polymeric material in the presence of exposed metallic conductors, the polymer is etched with an aqueous solution comprising chromic acid [which may be added in the form of chromic oxide (CrO3)], sulfuric acid, phosphoric acid and water wherein the water added does not exceed 55 volume percent of the total volume.
Inventors
- 👤 John F. D'Amico
- 👤 Michael A. DeAngelo, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:36
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/38; H05K3/381; C; C23; C23C; C23C18/00; C23C18/16; C23C18/18; C23C18/20; C23C18/22; C23C18/24; H05K2203/00; H05K2203/07; H05K2203/0779; H05K2203/0783; H05K3/10; H05K3/18; H05K3/181
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
39 words
An aqueous polymer etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 0.55 volume percent and wherein the quantity of sulfuric acid and chromic acid are sufficient to etch the polymer.
Claim 2
Dependent Claim
39 words
An aqueous polymer etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 0.55 volume percent and wherein the quantity of sulfuric acid and chromic acid are sufficient to etch the polymer.
Claim 3
Dependent Claim
18 words
The solution recited in claim 1 wherein the chromic acid is formed by the addition of chromium trioxide.
Claim 4
Dependent Claim
47 words
An aqueous etch solution comprising 30-38 volume percent concentrated H 2 SO 4 , 10-20 volume percent concentrated H 3 PO 4 , 90 g/l-saturation CrO 3 or its molar equivalent and 50-55 volume percent H 2 O exclusive of the water content of the concentrated acids.
Claim 5
Dependent Claim
47 words
An aqueous etch solution comprising 30-38 volume percent concentrated H 2 SO 4 , 10-20 volume percent concentrated H 3 PO 4 , 90 g/l-saturation CrO 3 or its molar equivalent and 50-55 volume percent H 2 O exclusive of the water content of the concentrated acids.
Claim 6
Dependent Claim
18 words
The etch solution recited in claim 1 having a specific gravity of from about 1.49 to about 1.54.
Claim 7
Dependent Claim
18 words
The etch solution recited in claim 3 having a specific gravity of from about 1.49 to about 1.54.
Claim 8
Independent Claim
59 words
A method for manufacturing a circuit including the step of etching a polymeric material in the presence of exposed metallic conductors with an etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 55 volume percent of the total etch solution and the specific gravity is from about 1.49 to about 1.54.
Claim 9
Independent Claim
59 words
A method for manufacturing a circuit including the step of etching a polymeric material in the presence of exposed metallic conductors with an etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 55 volume percent of the total etch solution and the specific gravity is from about 1.49 to about 1.54.
Claim 10
Dependent Claim
67 words
The method recited in claim 6 wherein the etch solution comprises the equivalent of 30-38 volume percent concentrated H 2 SO 4 , 10-20 volume percent concentrated H 3 PO 4 , 50-55 volume percent H 2 O and a member of the group consisting of chromic acid and a chromic acid forming oxide in a molar amount equivalent to from 90 g/l CrO 3 to saturation.
Claim 11
Independent Claim
102 words
A method of manufacturing a multilayer circuit on a substrate having a conductive layer thereon including the steps of forming in a desired pattern a polymeric dielectric layer over the substrate and conductive layer, swelling the polymer surface with an appropriate swelling agent, etching the swelled polymer with an etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 0.55 volume percent and wherein the quantity of sulfuric acid and chromic acid are sufficient to etch the polymer, rinsing and neutralizing the surface, and forming a conductive coating over the surface in a desired pattern.
Claim 12
Independent Claim
102 words
A method of manufacturing a multilayer circuit on a substrate having a conductive layer thereon including the steps of forming in a desired pattern a polymeric dielectric layer over the substrate and conductive layer, swelling the polymer surface with an appropriate swelling agent, etching the swelled polymer with an etch solution comprising chromic acid, sulfuric acid, phosphoric acid and water wherein the water does not exceed 0.55 volume percent and wherein the quantity of sulfuric acid and chromic acid are sufficient to etch the polymer, rinsing and neutralizing the surface, and forming a conductive coating over the surface in a desired pattern.
Claim 13
Dependent Claim
67 words
The method recited in claim 8 wherein the etch solution comprises the equivalent of 30-38 volume percent concentrated H 2 SO 4 , 10-20 volume percent concentrated H 3 PO 4 , 50-55 volume percent H 2 O and a member of the group consisting of chromic acid and a chromic acid forming oxide in a molar amount equivalent to from 90 g/l CrO 3 to saturation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |