Abstract A force sensor comprising a field effect transistor (FET) structure formed on a substrate, having an insulating layer overlying the substrate adjacent to the channel region of the transistor structure. A layer of piezoelectric material overlies the insulating layer, the layer of piezoelectric material having a portion which extends beyond the insulating layer to form a cantilever structure overhanging a portion of the channel region. A control electrode overlies the cantilever structure. Forces acting on the cantilever structure modify the charge distribution in the underlaying channel region, thereby to cause the drain current of the transistor to vary with any variation of force on the cantilever structure.
A force sensor comprising: a field effect transistor structure comprising a semiconductor substrate including a source region, a drain region and a channel region between the source and drain regions; an insulating layer overlying said substrate adjacent to said channel region; a layer of a piezoelectric material overlying said insulating layer and having a portion which extends beyond said insulating layer to overhang at least a portion of said channel region; and a control electrode which overlies at least said portion of the piezoelectric layer.
Claim 2
Dependent Claim
85 words
A force sensor comprising: a field effect transistor structure comprising a semiconductor substrate including a source region, a drain region and a channel region between the source and drain regions; an insulating layer overlying said substrate adjacent to said channel region; a layer of a piezoelectric material overlying said insulating layer and having a portion which extends beyond said insulating layer to overhang at least a portion of said channel region; and a control electrode which overlies at least said portion of the piezoelectric layer.
Claim 3
Dependent Claim
17 words
A sensor according to claim 1 wherein said portion of said piezoelectric layer is of rectangular form.