US4487635A
Expired / Lapsed
US
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Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam
Assignee: DIRECTOR-GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY (AN ORGAN OF MINISTRY OF INTERNATIONAL TRADE INDUSTRY OF JAPAN
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Filing: 1983-02-14
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Granted: 1984-12-11
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Expires: 2003-02-14
Abstract
Abstract A method of producing a superior semiconductor crystallized layer rapidly on a semiconductor substrate with the surface thereof covered with an insulating film is disclosed. An opening, desirably formed by at least two insulating films, is formed at an intersection of scribe lines of the semiconductor substrate. A polycrystal semiconductor film is formed on the insulating films and the opening, after which an energy beam is irradiated spirally on the polycrystal semiconductor film in such a manner that the beam passes at least one opening during each rotation thereof thereby to transform the polycrystal semiconductor film into a crystallized layer for forming a semiconductor element.
Inventors
- 👤 Koichi Kugimiya
- 👤 Shigenobu Akiyama
- 👤 Genshu Fuse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:25
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; H10P14/382
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
152 words
A method of fabricating a multilayer-type semiconductor device comprising the steps of: forming a first-layer semiconductor element on the surface of a semiconductor substrate; forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening, depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening; irradiating an energy beam on said polycrystal semiconductor film spirally relative to said polycrystal substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and forming a second-layer semiconductor element on said crystallized layer.
Claim 2
Independent Claim
152 words
A method of fabricating a multilayer-type semiconductor device comprising the steps of: forming a first-layer semiconductor element on the surface of a semiconductor substrate; forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening, depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening; irradiating an energy beam on said polycrystal semiconductor film spirally relative to said polycrystal substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and forming a second-layer semiconductor element on said crystallized layer.
Claim 3
Dependent Claim
107 words
A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein said insulating film has a first layer and a second layer, a first rectangular opening having a longitudinal axis is formed in a first insulating film, a second insulating film is formed on the first insulating film, and a second rectangular opening having a longitudinal axis substantially perpendicular to the longitudinal axis of said first rectangular opening is formed in the second insulating film so as to be superimposed on the first rectangular opening of said first insulating film, thereby forming said opening from the superimposed portions of said first and second rectangular openings.
Claim 4
Dependent Claim
37 words
A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein said step of forming a polycrystal semiconductor includes the process of heat tratment from 700° to 900° C. after depositing said polycrystal semiconductor film.
Claim 5
Dependent Claim
51 words
A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein a plurality of openings are formed on the scribe line at pitches of not more than one half of the diameter of the energy beam irradiated on the scribe line between the intersections of adjacent two scribe lines.
Claim 6
Dependent Claim
28 words
A method of fabricating a multilayer-type semiconductor device according to claim 2, wherein said insulating film includes a silicon nitride film layer and a silicon oxide film layer.
Claim 7
Dependent Claim
27 words
A method according to claim 1, wherein said semiconductor substrate is made of a silicon single crystal, and said polycrystal semiconductor is made of a polycrystal silicon.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said crystallized layer is made of a silicon single crystal.
Claim 9
Dependent Claim
17 words
A method according to claim 1, wherein an insulating film is selectively formed on the crystallized layer.
Claim 10
Dependent Claim
14 words
A method according to claim 1, wherein said semiconductor element is a MOS transistor.
Claim 11
Independent Claim
161 words
A method of fabricating a multilayer-type semiconductor device comprising the steps of: forming a first-layer semiconductor element on the surface of each of a plurality of semiconductor substrates disposed on a supporting base; forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening; depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening; irradiating an energy beam on said polycrystal semiconductor film spirally relative to said semiconductor substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and forming a second-layer semi-conductor element on said crystallized layer.
Claim 12
Independent Claim
161 words
A method of fabricating a multilayer-type semiconductor device comprising the steps of: forming a first-layer semiconductor element on the surface of each of a plurality of semiconductor substrates disposed on a supporting base; forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening; depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening; irradiating an energy beam on said polycrystal semiconductor film spirally relative to said semiconductor substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and forming a second-layer semi-conductor element on said crystallized layer.
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| 3.5 Years (Year 4) | 1987-12-11 | 1988-06-11 | 1988-12-11 | $2000.00 | Window Closed / Lapsed |
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