US4490737A
Expired / Lapsed
US
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Smooth glass insulating film over interconnects on an integrated circuit
Assignee: National Semiconductor Corp
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Filing: 1982-03-26
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Granted: 1984-12-25
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Expires: 2002-03-26
Abstract
Abstract A low temperature insulating glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of about 40% to 55% silicon dioxide (SiO 2 ), about 55% to 40% of germanium dioxide (GeO 2 ) and from 1% to about 5% of phosphorus pentoxide (P 2 O 5 ), by mole percent.
Inventors
- 👤 John M. Pierce
- 👤 William I. Lehrer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C03; C03C; C03C3/00; C03C3/04; C03C3/062; C03C3/076; C03C3/097; C03C4/00; C03C4/16; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/40; H10W74/43; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/22; H05K3/28; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6923
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
111 words
An integrated circuit comprising: a semiconductor material; insulation formed on said semiconductor material; interconnect leads formed on said insulation and selectively brought into contact with the underlying semiconductor material through openings in said insulation; and a glass layer formed on said interconnect leads, said glass layer consisting of about 45% to 50% SiO 2 , about 50% to 45% of GeO 2 and from 1% to about 5% of P 2 O 5 , by mole percent, said glass layer having a flow temperature sufficiently low to prevent damage to said leads and being capable of flowing over said leads at said flow temperature to provide a smooth glass layer surface.
Claim 2
Dependent Claim
111 words
An integrated circuit comprising: a semiconductor material; insulation formed on said semiconductor material; interconnect leads formed on said insulation and selectively brought into contact with the underlying semiconductor material through openings in said insulation; and a glass layer formed on said interconnect leads, said glass layer consisting of about 45% to 50% SiO 2 , about 50% to 45% of GeO 2 and from 1% to about 5% of P 2 O 5 , by mole percent, said glass layer having a flow temperature sufficiently low to prevent damage to said leads and being capable of flowing over said leads at said flow temperature to provide a smooth glass layer surface.
Claim 3
Dependent Claim
16 words
An integrated circuit as in claim 1 wherein said glass layer has a substantially smooth surface.
Claim 4
Dependent Claim
13 words
An integrated circuit as in claim 1, wherein said interconnect leads comprise aluminum.
Claim 5
Dependent Claim
20 words
An integrated circuit as in claim 1, wherein said interconnect leads comprise polycrystalline silicon selectively doped to a desired conductivity.
Claim 6
Dependent Claim
89 words
In combination a low temperature insulating glass and an interconnect structure of a semiconductor device, said insulating glass consisting of about 45% to 50% SiO 2 , about 50% to 45% GeO 2 and 1 to 5% of P 2 O 5 , all by mole percent, wherein said glass has a flow temperature under 1000° C. for smoothing said glass while preventing damage to said interconnect structure and wherein said glass is deposited on said structure by chemical vapor deposition at a temperature less than the flow temperature.
Claim 7
Dependent Claim
89 words
In combination a low temperature insulating glass and an interconnect structure of a semiconductor device, said insulating glass consisting of about 45% to 50% SiO 2 , about 50% to 45% GeO 2 and 1 to 5% of P 2 O 5 , all by mole percent, wherein said glass has a flow temperature under 1000° C. for smoothing said glass while preventing damage to said interconnect structure and wherein said glass is deposited on said structure by chemical vapor deposition at a temperature less than the flow temperature.
Claim 8
Dependent Claim
79 words
In combination a low-temperature insulating glass and an interconnect structure of a semiconductor device, said insulating glass consisting of about 45% to 50% SiO 2 , about 50% to 45% GeO 2 , and about 5% P 2 O 5 , all by mole percent, wherein said glass has a flow temperature under 1000° C. for smoothing said glass while preventing damage to said interconnect structure and wherein said glass is deposited on said structure by chemical vapor deposition.
Claim 9
Dependent Claim
79 words
In combination a low-temperature insulating glass and an interconnect structure of a semiconductor device, said insulating glass consisting of about 45% to 50% SiO 2 , about 50% to 45% GeO 2 , and about 5% P 2 O 5 , all by mole percent, wherein said glass has a flow temperature under 1000° C. for smoothing said glass while preventing damage to said interconnect structure and wherein said glass is deposited on said structure by chemical vapor deposition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |