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US4495219A
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Process for producing dielectric layers for semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1982-10-08
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Granted: 1985-01-22
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Expires: 2002-10-08
Abstract
Abstract A process for producing a dielectric layer which on a semiconductor layer comprises the steps of forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of the semiconductor layer and heating the semiconductor layer having the oxide layer thereon in an oxidizing atmosphere. The semiconductor layer is thermally oxidized so as to form an insulating layer which comprises oxide of the semiconductor material at the interface between the semiconductor layer and the oxide layer.
Inventors
- 👤 Takashi Kato
- 👤 Nobuo Toyokura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6314; H10P14/6322; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
103 words
A process for producing a dielectric layer on a semiconductor layer, comprising the steps of: forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of the semiconductor layer; and heating the semiconductor layer, having the oxide layer thereon, in a wet oxidizing atmosphere at a temperature in the range of 700° C. to 1200° C., to thermally oxidize the semiconductor layer so as to form an insulating layer, which comprises the oxide of the semiconductor layer, at the interface between the semiconductor layer and the oxide layer.
Claim 2
Dependent Claim
103 words
A process for producing a dielectric layer on a semiconductor layer, comprising the steps of: forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of the semiconductor layer; and heating the semiconductor layer, having the oxide layer thereon, in a wet oxidizing atmosphere at a temperature in the range of 700° C. to 1200° C., to thermally oxidize the semiconductor layer so as to form an insulating layer, which comprises the oxide of the semiconductor layer, at the interface between the semiconductor layer and the oxide layer.
Claim 3
Dependent Claim
12 words
A process according to claim 1, wherein the semiconductor layer comprises silicon.
Claim 4
Dependent Claim
21 words
A process according to claim 1, wherein said forming step comprises forming a layer of tantalum oxide on the semiconductor layer.
Claim 5
Dependent Claim
101 words
A process for producing a dielectric layer on a silicon semiconductor layer, comprising the steps of: depositing a tantalum layer on the surface of the silicon semiconductor layer; oxidizing the tantalum layer to convert the tantalum into tantalum oxide; and heating the silicon semiconductor layer, having the tantalum oxide layer thereon, in a wet oxidizing atmosphere at a temperature in the range of 700° C. to 1200° C., thereby thermally oxidizing the silicon comprising the semiconductor layer, so as to form an insulating layer which comprises silicon oxide at the interface between the silicon semiconductor layer and the tantalum oxide layer.
Claim 6
Dependent Claim
101 words
A process for producing a dielectric layer on a silicon semiconductor layer, comprising the steps of: depositing a tantalum layer on the surface of the silicon semiconductor layer; oxidizing the tantalum layer to convert the tantalum into tantalum oxide; and heating the silicon semiconductor layer, having the tantalum oxide layer thereon, in a wet oxidizing atmosphere at a temperature in the range of 700° C. to 1200° C., thereby thermally oxidizing the silicon comprising the semiconductor layer, so as to form an insulating layer which comprises silicon oxide at the interface between the silicon semiconductor layer and the tantalum oxide layer.
Claim 7
Dependent Claim
15 words
A process according to claim 4, wherein the silicon semiconductor layer is one conductivity type.
Claim 8
Dependent Claim
21 words
A process according to claim 4, further comprising the step of forming an electrically conductive layer on the tantalum oxide layer.
Claim 9
Dependent Claim
23 words
A process according to claim 1, wherein said heating step further comprises heating the semiconductor layer at 800 degrees C. for ten minutes.
Claim 10
Dependent Claim
26 words
A process according to claim 1, wherein said heating step further comprises heating the semiconductor layer at a temperature of 1,000 degrees C. for eighty minutes.
Claim 11
Dependent Claim
24 words
A process according to claim 4, wherein said heating step further comprises heating the tantalum oxide layer at a temperature of 800 degrees C.
Claim 12
Dependent Claim
27 words
A process according to claim 4, wherein said heating step further comprises heating the tantalum oxide layer at a temperature of 1,000 degrees C. for twenty minutes.
Claim 13
Dependent Claim
122 words
A process for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium and vanadium on the surface of the semiconductor substrate; (b) heating the semiconductor substrate, having the oxide layer formed thereon, at a temperature in the range of 700° C. to 1200° C. in a wet oxidizing atmosphere to thermally oxidize the semiconductor substrate so as to form a dielectric layer, which comprises the oxide of the semiconductor substrate, at the interface between the semiconductor substrate and the oxide layer; and (c) forming an electrode on the surface of the oxide layer produced by said step (a).
Claim 14
Dependent Claim
122 words
A process for producing a semiconductor device having a semiconductor substrate, comprising the steps of: (a) forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium and vanadium on the surface of the semiconductor substrate; (b) heating the semiconductor substrate, having the oxide layer formed thereon, at a temperature in the range of 700° C. to 1200° C. in a wet oxidizing atmosphere to thermally oxidize the semiconductor substrate so as to form a dielectric layer, which comprises the oxide of the semiconductor substrate, at the interface between the semiconductor substrate and the oxide layer; and (c) forming an electrode on the surface of the oxide layer produced by said step (a).
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |