US4495262A
Expired / Lapsed
US
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Photosensitive member for electrophotography comprises inorganic layers
Assignee: Konica Minolta Inc
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Filing: 1983-04-28
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Granted: 1985-01-22
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Expires: 2003-04-28
Abstract
Abstract Disclosed is a photosensitive member, or an electrophotographic photosensitive member, characterised by having a photoconductive layer comprising at least one of an amorphous hydrogenated and/or fluorinated silicon germanium and an amorphous hydrogenated and/or fluorinated silicon germanium carbide, a first amorphous hydrogenated and/or fluorinated silicon carbide layer formed on the photoconductive layer and a second amorphous hydrogenated and/or fluorinated silicon carbide layer formed beneath said photoconductive layer.
Inventors
- 👤 Masatoshi Matsuzaki
- 👤 Toshinori Yamazaki
- 👤 Isao Myokan
- 👤 Tetsuo Shima
- 👤 Hiroyuki Nomori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:13
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
131 words
A photosensitive member which comprises a substrate, a second silicon carbide layer on said substrate, a silicon germanium photoconductive layer on said second silicon carbide layer, and a first silicon carbide layer on said silicon germanium layer; said first silicon carbide layer comprising amorphous hydrogenated silicon carbide or amorphous fluorinated silicon carbide or amorphous hydrogenated and fluorinated silicon carbide; said second silicon carbide layer comprising amorphous hydrogenated silicon carbide or amorphous fluorinated silicon carbide or amorphous hydrogenated and fluorinated silicon carbide; and said silicon germanium photoconductive layer comprising at least one silicon germanium selected from the group consisting of amorphous hydrogenated silicon germanium, amorphous fluorinated silicon germanium, amorphous hydrogenated and fluorinated silicon germanium, amorphous hydrogenated silicon germanium carbide, amorphous fluorinated silicon germanium carbide and amorphous hydrogenated and fluorinated silicon germanium carbide.
Claim 2
Dependent Claim
131 words
A photosensitive member which comprises a substrate, a second silicon carbide layer on said substrate, a silicon germanium photoconductive layer on said second silicon carbide layer, and a first silicon carbide layer on said silicon germanium layer; said first silicon carbide layer comprising amorphous hydrogenated silicon carbide or amorphous fluorinated silicon carbide or amorphous hydrogenated and fluorinated silicon carbide; said second silicon carbide layer comprising amorphous hydrogenated silicon carbide or amorphous fluorinated silicon carbide or amorphous hydrogenated and fluorinated silicon carbide; and said silicon germanium photoconductive layer comprising at least one silicon germanium selected from the group consisting of amorphous hydrogenated silicon germanium, amorphous fluorinated silicon germanium, amorphous hydrogenated and fluorinated silicon germanium, amorphous hydrogenated silicon germanium carbide, amorphous fluorinated silicon germanium carbide and amorphous hydrogenated and fluorinated silicon germanium carbide.
Claim 3
Dependent Claim
22 words
The photosensitive member of claim 1, wherein said first silicon carbide layer has a thickness of from 50 Å to 5000 Å.
Claim 4
Dependent Claim
38 words
The photosensitive member of claim 1, wherein said silicon germanium photoconductive layer has a thickness of from 5000 Å to 80 μm, and said second silicon carbide layer has a thickness of from 50 Å to 5000 Å.
Claim 5
Dependent Claim
38 words
The photosensitive member of claim 1, wherein said silicon germanium photoconductive layer has a thickness of from 1000 Å to 5 μm, and said second silicon carbide layer has a thickness of from 5000 Å to 80 μm.
Claim 6
Dependent Claim
38 words
The photosensitive member of claim 2, wherein said silicon germanium photoconductive layer has a thickness of from 5000 Å to 80 μm, and said second silicon carbide layer has a thickness of from 50 Å to 5000 Å.
Claim 7
Dependent Claim
38 words
The photosensitive member of claim 2, wherein said silicon germanium photoconductive layer has a thickness of from 1000 Å to 5 μm, and said second silicon carbide layer has a thickness of from 5000 Å to 80 μm.
Claim 8
Dependent Claim
27 words
The photosensitive member of claim 1, wherein the number of carbon atoms in said first silicon carbide layer is from 40 atomic % to 90 atomic %.
Claim 9
Dependent Claim
27 words
The photosensitive member of claim 1, wherein the number of carbon atoms in said second silicon carbide layer is from 10 atomic % to 90 atomic %.
Claim 10
Dependent Claim
27 words
The photosensitive member of claim 3, wherein the number of germanium atoms in said silicon germanium photoconductive layer is from 0.1 atomic % to 50 atomic %.
Claim 11
Dependent Claim
26 words
The photosensitive member of claim 3, wherein the number of carbon atoms in said silicon germanium photoconductive layer is from 0.001 ppm to 30 atomic %.
Claim 12
Dependent Claim
25 words
The photosensitive member of claim 3, wherein said silicon germanium photoconductive member is doped with an element of Group III A of the Periodic Table.
Claim 13
Dependent Claim
21 words
The photosensitive member of claim 11, wherein said element is selected from the group consisting of B, A1, Ga and In.
Claim 14
Dependent Claim
27 words
The photosensitive member of claim 4, wherein the number of germanium atoms in said silicon germanium photoconductive layer is from 0.1 atomic % to 50 atomic %.
Claim 15
Dependent Claim
26 words
The photosensitive member of claim 4, wherein the number of carbon atoms in said silicon germanium photoconductive layer is from 0.001 ppm to 30 atomic %.
Claim 16
Dependent Claim
23 words
The photosensitive member of claim 4, wherein said photoconductive member is doped with an element of Group III A of the Periodic Table.
Claim 17
Dependent Claim
21 words
The photosensitive member of claim 15, wherein said element is selected from the group consisting of B, A1, Ga and In.
Claim 18
Dependent Claim
27 words
The photosensitive member of claim 5, wherein the number of germanium atoms in said silicon germanium photoconductive layer is from 0.1 atomic % to 50 atomic %.
Claim 19
Dependent Claim
26 words
The photosensitive member of claim 5, wherein the number of carbon atoms in said silicon germanium photoconductive layer is from 0.001 ppm to 30 atomic %.
Claim 20
Dependent Claim
25 words
The photosensitive member of claim 5, wherein said silicon germanium photoconductive member is doped with an element of Group III A of the Periodic Table.
Claim 21
Dependent Claim
27 words
The photosensitive member of claim 6, wherein the number of germanium atoms in said silicon germanium photoconductive layer is from 0.1 atomic % to 50 atomic %.
Claim 22
Dependent Claim
26 words
The photosensitive member of claim 6, wherein the number of carbon atoms in said silicon germanium photoconductive layer is from 0.001 ppm to 30 atomic %.
Claim 23
Dependent Claim
25 words
The photosensitive member of claim 6, wherein said silicon germanium photoconductive member is doped with an element of Group III A of the Periodic Table.
Claim 24
Dependent Claim
25 words
The photosensitive member of claim 1, wherein said second silicon carbide layer is directly in contact with said substrate and said silicon germanium photoconductive layer.
Claim 25
Dependent Claim
33 words
The photosensitive element of claim 1, wherein the number of hydrogen atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 1 to 40 atomic %.
Claim 26
Dependent Claim
33 words
The photosensitive element of claim 5, wherein the number of hydrogen atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 1 to 40 atomic %.
Claim 27
Dependent Claim
33 words
The photosensitive element of claim 6, wherein the number of hydrogen atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 1 to 40 atomic %.
Claim 28
Dependent Claim
33 words
The photosensitive element of claim 1, wherein the number of fluorine atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 0.01 to 20 atomic %.
Claim 29
Dependent Claim
33 words
The photosensitive element of claim 5, wherein the number of fluorine atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 0.01 to 20 atomic %.
Claim 30
Dependent Claim
33 words
The photosensitive element of claim 6, wherein the number of fluorine atoms in each of said first silicon carbide layer and said second silicon carbide layer is from 0.1 to 20 atomic %.
References Cited (Backward Citations)
US4342044A
Cited
US4289822A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |