Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
48 words
A method comprising the steps of: supporting at least one semiconductor device over a first surface of a conductive layer; disposing a second opposing surface of the conductive layer on a bonding surface; and bonding portions of the conductive layer underlying the semiconductor device onto the bonding surface.
Claim 2
Independent Claim
48 words
A method comprising the steps of: supporting at least one semiconductor device over a first surface of a conductive layer; disposing a second opposing surface of the conductive layer on a bonding surface; and bonding portions of the conductive layer underlying the semiconductor device onto the bonding surface.
Claim 3
Dependent Claim
35 words
The method as recited in claim 1 further comprising the steps of: etching selected portions adjacent to the underlying portions of the common conductive layer to provide a frame structure; and removing the frame structure.
Claim 4
Independent Claim
61 words
A method comprising the steps of: forming a plurality of semiconductor elements over a first surface of a common conductive layer; disposing the second opposing surface of the common conductive layer on a bonding surface; bonding the portion of the common conductive layer underlying each semiconductor element onto the bonding surface; and removing remaining unbonded portions of the common conductive layer.
Claim 5
Independent Claim
61 words
A method comprising the steps of: forming a plurality of semiconductor elements over a first surface of a common conductive layer; disposing the second opposing surface of the common conductive layer on a bonding surface; bonding the portion of the common conductive layer underlying each semiconductor element onto the bonding surface; and removing remaining unbonded portions of the common conductive layer.
Claim 6
Dependent Claim
38 words
The method as recited in claim 3 further comprising the steps of: etching the common conductive layer to provide a frame structure from the common conductive layer; and wherein during the removing step the frame structure is removed.
Claim 7
Independent Claim
100 words
A method comprising the steps of: forming a semiconductor device disposed over a first surface of a plated conductive layer, said device and a second opposite surface of said conductive layer being supported by a plated apertured support layer; masking portions of the plated conductive layer and the support layer; etching unmasked portions of the conductive layer to provide at least one finger portion from such conductive layer said finger portion being disposed between masked portions of the conductive layer and such support layer; and removing the apertured support layer and portions of the unetched portions of the conductive layer.
Claim 8
Independent Claim
100 words
A method comprising the steps of: forming a semiconductor device disposed over a first surface of a plated conductive layer, said device and a second opposite surface of said conductive layer being supported by a plated apertured support layer; masking portions of the plated conductive layer and the support layer; etching unmasked portions of the conductive layer to provide at least one finger portion from such conductive layer said finger portion being disposed between masked portions of the conductive layer and such support layer; and removing the apertured support layer and portions of the unetched portions of the conductive layer.
Claim 9
Independent Claim
93 words
A method of forming a web-shaped frame structure for holding together at least one semiconductor element comprising the steps of: supporting at least one semiconductor device over a first region of a support layer; masking selected portions of said first region of the support layer; and etching unmasked portions of said first region of said support layer to provide at least one portion of such support layer integrally formed between a second region of such support layer and unetched portions of the first region of such support layer to provide the web-shaped frame.
Claim 10
Independent Claim
93 words
A method of forming a web-shaped frame structure for holding together at least one semiconductor element comprising the steps of: supporting at least one semiconductor device over a first region of a support layer; masking selected portions of said first region of the support layer; and etching unmasked portions of said first region of said support layer to provide at least one portion of such support layer integrally formed between a second region of such support layer and unetched portions of the first region of such support layer to provide the web-shaped frame.
Claim 11
Independent Claim
68 words
A method of holding a plurality of semiconductor elements having a conductive layer integrally formed with a support comprising the step of: etching selected portions of said conductive layer to provide a first region of said conductive layer disposed over a surface of said semiconductor elements and a second region of said conductive layer comprising a plurality of finger portions integrally formed between such first region and support.
Claim 12
Independent Claim
68 words
A method of holding a plurality of semiconductor elements having a conductive layer integrally formed with a support comprising the step of: etching selected portions of said conductive layer to provide a first region of said conductive layer disposed over a surface of said semiconductor elements and a second region of said conductive layer comprising a plurality of finger portions integrally formed between such first region and support.