Abstract The present invention is an improvement of a semiconductor memory device, preferably a PROM or a mask ROM, wherein: MOS transistors are formed in a semiconductor substrate, are arranged in rows, and are isolated from each other by a plurality of field insulation films arranged in an island pattern; the MOS transistors aligned in one of the rows have one common gate which extends over one row of field insulation films; the MOS transistors aligned in one of the rows have a common first region for forming a drain or a source parallel to the common gates; and a second region for forming another drain or source is surrounded by a pair of common gates and a pair of field insulation films so that a plurality of second regions are isolated from each other. According to the present invention, the field insulation films and the common gates are delineated to coincide with one another at the ends thereof facing the common first region using a mask film extending between a pair of common gates and covering the region between the pair of common gates and the part of the common gates not covered by the mask film.
Inventors
👤 Kazunari Shirai
👤 Izumi Tanaka
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-28 23:54
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/20; H10B20/25
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
210 words
In a semiconductor memory device, comprising: a semiconductor substrate; MOS transistors for use as memory cells formed in said semiconductor substrate and arranged in a plurality of rows; a plurality of field insulation films arranged in an island pattern formed on said semiconductor substrate, aligned in rows, isolating said MOS transistors from each other and each having an end; common gates of respective said MOS transistors running in the direction of the rows and said common gates formed on and extending on one row of said field insulation films and having an edge; a common first region for forming a source or a drain of said MOS transistors running in the direction of the rows and said common first region being parallel to said common gates; and second regions each for forming another source or drain of each MOS transistor, surrounded by both a pair of said common gates and a pair of said field insulation films that are arranged in an island pattern and each of said second regions being isolated from each other; and the end of said field insulation films facing said common first region and coinciding with the edge of said common gate extending on said field insulation films and also facing said common first region.
Claim 2
Dependent Claim
210 words
In a semiconductor memory device, comprising: a semiconductor substrate; MOS transistors for use as memory cells formed in said semiconductor substrate and arranged in a plurality of rows; a plurality of field insulation films arranged in an island pattern formed on said semiconductor substrate, aligned in rows, isolating said MOS transistors from each other and each having an end; common gates of respective said MOS transistors running in the direction of the rows and said common gates formed on and extending on one row of said field insulation films and having an edge; a common first region for forming a source or a drain of said MOS transistors running in the direction of the rows and said common first region being parallel to said common gates; and second regions each for forming another source or drain of each MOS transistor, surrounded by both a pair of said common gates and a pair of said field insulation films that are arranged in an island pattern and each of said second regions being isolated from each other; and the end of said field insulation films facing said common first region and coinciding with the edge of said common gate extending on said field insulation films and also facing said common first region.
Claim 3
Dependent Claim
55 words
A semiconductor memory device according to claim 1, wherein the ends of said field insulation films are delineated by etching using a mask film extending between a pair of common gates and covering the region between the pair of common gates and using the part of the common gates not covered by said mask film.
Claim 4
Dependent Claim
20 words
A semiconductor memory device according to claim 1, wherein said common first region is the source of said MOS transistors.
Claim 5
Dependent Claim
22 words
A semiconductor memory device according to claim 3, wherein the width of said common first region is from 2 to 5 microns.