US4514636A — Ion treatment apparatus

Claim 1

Independent Claim 260 words

An apparatus for treating substantially flat wafer articles with a focused ion beam comprising: a high vacuum chamber adapted to be evacuated to a pressure a substantial number of orders of magnitude below 1 torr, sufficient to enable formation and focusing of said ion beam, a treating station within said high vacuum chamber, means for producing, focusing and directing said ion beam onto wafer articles at the treating station, a mounting member having a substantially, flat, temperature-controlled support surface on which each wafer is positioned at the treating station, and means for controlling the temperature of the wafer comprising an open clamping member for engageing one flat surface of said wafer at its periphery to clamp the other flat surface of said wafer against said substantially flat support surface of said mounting member, said focused beam passing through the opening of said clamping member to said one surface of said wafer, means for introducing, to the interface between the surface of the wafer and the surface of the mounting member, gas under subatmospheric pressure of sufficient value to enable the gas to have substantial heat conductance, said pressure being greater than about 1 torr, whereby effective heat transfer by conduction is obtained between said surfaces of said wafer and mounting member due to the presence of said conductive gas in the short paths that exist between the urged-together surfaces while leakage of said gas into said high vacuum chamber is substantially inhibited by said clamping of said surfaces against one another, thereby to prevent said gas from influencing said treatment.

Claim 2

Independent Claim 260 words

An apparatus for treating substantially flat wafer articles with a focused ion beam comprising: a high vacuum chamber adapted to be evacuated to a pressure a substantial number of orders of magnitude below 1 torr, sufficient to enable formation and focusing of said ion beam, a treating station within said high vacuum chamber, means for producing, focusing and directing said ion beam onto wafer articles at the treating station, a mounting member having a substantially, flat, temperature-controlled support surface on which each wafer is positioned at the treating station, and means for controlling the temperature of the wafer comprising an open clamping member for engageing one flat surface of said wafer at its periphery to clamp the other flat surface of said wafer against said substantially flat support surface of said mounting member, said focused beam passing through the opening of said clamping member to said one surface of said wafer, means for introducing, to the interface between the surface of the wafer and the surface of the mounting member, gas under subatmospheric pressure of sufficient value to enable the gas to have substantial heat conductance, said pressure being greater than about 1 torr, whereby effective heat transfer by conduction is obtained between said surfaces of said wafer and mounting member due to the presence of said conductive gas in the short paths that exist between the urged-together surfaces while leakage of said gas into said high vacuum chamber is substantially inhibited by said clamping of said surfaces against one another, thereby to prevent said gas from influencing said treatment.

Claim 3

Dependent Claim 41 words

The apparatus of claim 1 wherein said means for introducing said gas to said interface between said surfaces is adapted to maintain said gas at a pressure about six orders of magnitude greater than the pressure in said high vacuum chamber.

Claim 4

Dependent Claim 24 words

The apparatus of claim 1 including elastomeric seal means for sealing the wafer article to the mounting member adjacent the periphery of the article.

Claim 5

Dependent Claim 38 words

The apparatus of claim 1 including means for cooling the mounting member whereby the wafer being treated is cooled by heat conduction from the wafer via the gas to the cooled support surface against which it is clamped.

Claim 6

Dependent Claim 225 words

Apparatus for treating semiconductor wafers with a focused ion beam comprising: a high vacuum chamber adapted to be evacuated to a pressure a substantial number of orders of magnitude below 1 torr sufficient to enable formation and focusing of said ion beam, a treating station within said vacuum chamber including a mounting member for the wafer, said mounting member including a substantially flat, temperature-controlled support surface engageable by a surface of said wafer, said support surface adapted to enable said wafer to slide face-to-face thereupon, gravity slide means for enabling the wafer to slide from a first position to the treating station and onto said flat surface of said mounting member, means at the periphery of said wafer for clamping a flat surface of said wafer against said support surface, means for producing, focusing and directing an ion beam to the treating station along an ion beam path, means for exposing the opposite surfaces of said wafer to said ion beam while said wafer is clamped against said support surface, means for introducing, to the interface between the surfaces of said wafer and mounting member, gas under subatmospheric pressure of sufficient value to enable the gas to have substantial heat conductance, said pressure being greater than about 1 torr, and means enabling the wafer to slide off of said mounting member to a further position.

Claim 7

Dependent Claim 225 words

Apparatus for treating semiconductor wafers with a focused ion beam comprising: a high vacuum chamber adapted to be evacuated to a pressure a substantial number of orders of magnitude below 1 torr sufficient to enable formation and focusing of said ion beam, a treating station within said vacuum chamber including a mounting member for the wafer, said mounting member including a substantially flat, temperature-controlled support surface engageable by a surface of said wafer, said support surface adapted to enable said wafer to slide face-to-face thereupon, gravity slide means for enabling the wafer to slide from a first position to the treating station and onto said flat surface of said mounting member, means at the periphery of said wafer for clamping a flat surface of said wafer against said support surface, means for producing, focusing and directing an ion beam to the treating station along an ion beam path, means for exposing the opposite surfaces of said wafer to said ion beam while said wafer is clamped against said support surface, means for introducing, to the interface between the surfaces of said wafer and mounting member, gas under subatmospheric pressure of sufficient value to enable the gas to have substantial heat conductance, said pressure being greater than about 1 torr, and means enabling the wafer to slide off of said mounting member to a further position.

Claim 8

Dependent Claim 70 words

The apparatus of claim 5 wherein said mounting member is tiltable from a wafer receiving position via gravity feed, to a position where it intercepts the line of said beam, said tiltable mounting member having a passage therethrough for said gas and including means for cooling said mounting member whereby the wafer being treated is cooled by heat conduction from the wafer through the gas to said tiltable mounting member.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1988-04-29	1988-10-29	1989-04-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1992-04-29	1992-10-29	1993-04-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1996-04-29	1996-10-29	1997-04-30	$7700.00	Window Closed / Lapsed

Ion treatment apparatus

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag