Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
288 words
Photo transistor, comprising a semiconductor body having a surface, a collector zone disposed in said body and having at least a part thereof emerging to the surface of said body, the collector zone being of a first conductivity type and being connectable to a potential, a base zone being embedded in a planar manner in said collector zone and having at least a part thereof emerging to the surface of said body and being of a second conductivity type, an emitter zone being embedded in a planar manner in said base zone and being of the first conductivity type, an emitter electrode disposed on said emitter zone, a region disposed on the surface of said body being intended for exposure having an edge and a remainder of said region, the region comprising the emitter zone, said part of the base zone emerging to the surface of said body and a part of the collector zone, an insulating layer covering said surface, an auxiliary zone being embedded in the surface of said body and having the second conductivity type and being connectable to a potential, an auxiliary electrode being connectable to a potential and being transparent to light and being disposed on said insulating layer and overlapping at least said part of said base zone emerging to the surface and said auxiliary zone and covering said part of said collector zone emerging to the surface, said insulating layer having a relatively thicker part and a relatively thinner part both being disposed under said auxiliary electrode, said thicker part being disposed over the edge of said region intended for exposure and overlapping said auxiliary zone and said thinner part being disposed over the remainder of said region intended for exposure.
Claim 2
Dependent Claim
288 words
Photo transistor, comprising a semiconductor body having a surface, a collector zone disposed in said body and having at least a part thereof emerging to the surface of said body, the collector zone being of a first conductivity type and being connectable to a potential, a base zone being embedded in a planar manner in said collector zone and having at least a part thereof emerging to the surface of said body and being of a second conductivity type, an emitter zone being embedded in a planar manner in said base zone and being of the first conductivity type, an emitter electrode disposed on said emitter zone, a region disposed on the surface of said body being intended for exposure having an edge and a remainder of said region, the region comprising the emitter zone, said part of the base zone emerging to the surface of said body and a part of the collector zone, an insulating layer covering said surface, an auxiliary zone being embedded in the surface of said body and having the second conductivity type and being connectable to a potential, an auxiliary electrode being connectable to a potential and being transparent to light and being disposed on said insulating layer and overlapping at least said part of said base zone emerging to the surface and said auxiliary zone and covering said part of said collector zone emerging to the surface, said insulating layer having a relatively thicker part and a relatively thinner part both being disposed under said auxiliary electrode, said thicker part being disposed over the edge of said region intended for exposure and overlapping said auxiliary zone and said thinner part being disposed over the remainder of said region intended for exposure.
Claim 3
Dependent Claim
28 words
Photo transistor according to claim 1, wherein at least the part of the auxiliary electrode disposed over said thinner part of said insulating layer, is formed of polysilicon.
Claim 4
Dependent Claim
42 words
Photo transistor according to claim 1 or 2, wherein said base zone has an edge, said emitter zone and said base zone are wider than said emitter electrode, and said emitter electrode is in contact with the edge of said base zone.
Claim 5
Dependent Claim
29 words
Photo transistor according to claim 1, wherein the area of said region intended for exposure is 300 to 800 times as large as the area of said base zone.