Surface acoustic wave device from eutectic deposit

Claim 2

In a surface acoustic wave device having at least two transducers situated on the surface of a body of single crystal piezoelectric material, each transducer comprising a first comb-like structure interdigitated with and electrically insulated from a second comb-like structure, each said comb-like structure comprising a spaced array of linear metallic elements electrically interconnected at one end by means of a metallic interconnect, the improvement which comprises as the metallic elements of one of the spaced arrays the metallic phase of composition substantially corresponding to one of the phases of a metallic eutectic alloy system and the widths of the metallic elements of arrays being less than 0.33 micron.

Claim 3

The improvement substantially as recited in claim 1 wherein said eutectic alloy system is one selected from the group consisting of the lead-tin, lead-cadmium, aluminum-copper, chrome-silicon, and molybdenum-silicon systems.

Claim 4

The improvement substantially as recited in claim 1 wherein the widths of the spaces in-between said metallic elements are less than about 0.33 micron.

Claim 5

A surface acoustic wave device comprising (a) a body of piezoelectric material, said body having substantially parallel major surfaces and a peripheral edge area interconnecting said major surfaces; (b) a thin film lamellar metallic eutectic on at least a portion of one of said major surfaces of said body; (c) one of the phases of said thin film lamellar metallic eutectic being removed to form a first spaced array of substantially parallel metallic elements; (d) a first interconnect electrically connecting said metallic elements of said first spaced array, to form a first comb-like structure; (e) a layer of an insulating material over the exposed surfaces of said first comb-like structure; (f) a conducting material in the spaces between the insulated elements of said first spaced array forming a second spaced array of metallic elements substantially juxtaposed from said insulated metallic elements of said first spaced array; (g) a second interconnect electrically connecting said metallic elements of said second spaced array, forming a second comb-like structure interdigitated with said first comb-like structure and electrically insulated from said first comb-like structure; and (h) the lateral spacing of the metallic elements of said first spaced array being less than about 0.33 microns.

Claim 6

A surface acoustic wave device comprising (a) a body of piezoelectric material, said body having substantially parallel major surfaces and a peripheral edge area interconnecting said major surfaces; (b) a thin film lamellar metallic eutectic on at least a portion of one of said major surfaces of said body; (c) one of the phases of said thin film lamellar metallic eutectic being removed to form a first spaced array of substantially parallel metallic elements; (d) a first interconnect electrically connecting said metallic elements of said first spaced array, to form a first comb-like structure; (e) a layer of an insulating material over the exposed surfaces of said first comb-like structure; (f) a conducting material in the spaces between the insulated elements of said first spaced array forming a second spaced array of metallic elements substantially juxtaposed from said insulated metallic elements of said first spaced array; (g) a second interconnect electrically connecting said metallic elements of said second spaced array, forming a second comb-like structure interdigitated with said first comb-like structure and electrically insulated from said first comb-like structure; and (h) the lateral spacing of the metallic elements of said first spaced array being less than about 0.33 microns.

Claim 7

A surface acoustic wave device comprising (a) a body of piezoelectric material, said body having substantially parallel major surfaces and a peripheral edge area interconnecting said major surfaces; (b) a thin film lamellar metallic eutectic on at least a portion of one of said major surfaces of said body; (c) one of the phases of said thin film lamellar metallic eutectic forming a first spaced array of substantially parallel metallic elements; (d) a first interconnect to electrically connect said metallic elements of said first spaced array and forming a first comb-like structure; (e) a layer of an insulating material over the exposed surfaces of said first comb-like structure; (f) the top surface of said first interconnect being masked; (g) a substantially continuous layer of a conducting material over the insulated first comb-like structure and filling the spaces between the insulated elements of said first spaced array; (h) segments of the deposited conducting material being absent from above the insulated metallic elements of said first spaced array to form a second spaced array of metallic elements substantially juxtaposed from said insulated metallic elements of said first spaced array; (i) the top surface of said first and second spaced arrays being masked; (j) a second interconnect to electrically connect said metallic elements of said second spaced array, and forming a second comb-like structure interdigitated with and electrically insulated from said first comb-like structure; (k) the masking material and metal deposited thereon being removed from the top surface of said first interconnect and from the top surface of the first and second spaced arrays, and (l) the lateral spacing of the first spaced array of substantially parallel metallic elements being less than about 0.33 microns.

Claim 8

A surface acoustic wave device comprising (a) a body of piezoelectric material, said body having substantially parallel major surfaces and a peripheral edge area interconnecting said major surfaces; (b) a thin film lamellar metallic eutectic on at least a portion of one of said major surfaces of said body; (c) one of the phases of said thin film lamellar metallic eutectic forming a first spaced array of substantially parallel metallic elements; (d) a first interconnect to electrically connect said metallic elements of said first spaced array and forming a first comb-like structure; (e) a layer of an insulating material over the exposed surfaces of said first comb-like structure; (f) the top surface of said first interconnect being masked; (g) a substantially continuous layer of a conducting material over the insulated first comb-like structure and filling the spaces between the insulated elements of said first spaced array; (h) segments of the deposited conducting material being absent from above the insulated metallic elements of said first spaced array to form a second spaced array of metallic elements substantially juxtaposed from said insulated metallic elements of said first spaced array; (i) the top surface of said first and second spaced arrays being masked; (j) a second interconnect to electrically connect said metallic elements of said second spaced array, and forming a second comb-like structure interdigitated with and electrically insulated from said first comb-like structure; (k) the masking material and metal deposited thereon being removed from the top surface of said first interconnect and from the top surface of the first and second spaced arrays, and (l) the lateral spacing of the first spaced array of substantially parallel metallic elements being less than about 0.33 microns.