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US4528583A Expired / Lapsed US ⏱️ 0.0 years remaining

Programmable semiconductor device and method of manufacturing same

Assignee: US Philips Corp
•
Filing: 1984-04-19
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Granted: 1985-07-09
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Expires: 2004-04-19
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Abstract

Abstract A programmable semiconductor device having a microswitch (11) which over a part of its length is provided separately from a bridging conductor (10), for example, a word line and a supporting element. Since the dimensions of the switch (11) and the conductor (10) are independent of each other, the resistance of the conductor (10) may be low so that programmable memories having a high read-in and read-out rate are obtained. In addition the circuit element, for example a Schottky diode (3, 8) can be realized below the bridging part (12) of the conductor (10), which results in a high bit density. Since the switch (11) is present below the conductor (10) the assembly can be passivated in the unprogrammed state by means of a protective layer (20), so that the switch 11 is encapsulated in a hollow space (21).

Inventors

  • 👤 Ties S. Te Velde
  • 👤 Arie Slob

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 14:00
CPC Classifications
H; H10; H10W; H10W42/00; G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H01; H01H; H01H59/00; H01H59/0009; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H01H1/00; H01H1/0036

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 196 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor which belongs to a first line and which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively at least at one end of the conductor belonging to the first line, which strip is separated from the semiconductor circuit element or a contact layer connected thereto electrically conductively at least over a part of its length by gas or a vacuum, which part extends separately from the electric conductor above the semiconductor circuit element or the contact layer and is separated therefrom by an intermediate space proportioned such that as a result of electrostatic attraction between the strip and the semiconductor circuit element or the contact layer a connection can be formed between the strip and the semiconductor circuit element or the contact layer; wherein said strip of electrically conductive material consists of a material different from the material used for said electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 2
Dependent Claim 196 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor which belongs to a first line and which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively at least at one end of the conductor belonging to the first line, which strip is separated from the semiconductor circuit element or a contact layer connected thereto electrically conductively at least over a part of its length by gas or a vacuum, which part extends separately from the electric conductor above the semiconductor circuit element or the contact layer and is separated therefrom by an intermediate space proportioned such that as a result of electrostatic attraction between the strip and the semiconductor circuit element or the contact layer a connection can be formed between the strip and the semiconductor circuit element or the contact layer; wherein said strip of electrically conductive material consists of a material different from the material used for said electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 3
Dependent Claim 175 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor belonging to a first line which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively to the semiconductor circuit element, in which a part of the strip extends separately from the supporting member, the semiconductor circuit element or a contact layer connected therewith electrically conductively below the electric conductor belonging to the first line, which part is separated from the conductor by gas or a vacuum with an intermediate space between the strip and the conductor proportioned such that as a result of electrostatic attraction between the strip and the conductor a connection can be formed between the strip and the conductor; wherein said strip of electrically conductive material consists of a material different from the material used for the electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 4
Dependent Claim 175 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor belonging to a first line which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively to the semiconductor circuit element, in which a part of the strip extends separately from the supporting member, the semiconductor circuit element or a contact layer connected therewith electrically conductively below the electric conductor belonging to the first line, which part is separated from the conductor by gas or a vacuum with an intermediate space between the strip and the conductor proportioned such that as a result of electrostatic attraction between the strip and the conductor a connection can be formed between the strip and the conductor; wherein said strip of electrically conductive material consists of a material different from the material used for the electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 5
Dependent Claim 52 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the strip is present in a hollow space the walls of which are formed at least partly by protective material which is provided over parts of the supporting member or the semiconductor circuit element present beside the conductor.
Claim 6
Dependent Claim 33 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the strip of conductive material comprises one or more of the materials of the group nickel, cobalt and platinum.
Claim 7
Dependent Claim 28 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the thickness of the strip of electrically conductive material is at most 0.5 μm.
Claim 8
Dependent Claim 43 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the intermediate space between the separately extending part of the strip of electrically conductive material and the semiconductor circuit element or the contact layer is at most 0.5 micrometer.
Claim 9
Dependent Claim 40 words
A programmable semiconductor device as claimed in claim 2, characterized in that the intermediate space between the conductors belonging to the first line and the part of the strip of electrically conductive material extending separately is at most 0.5 micrometer.
Claim 10
Dependent Claim 67 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the first line forms part of a first group of lines which forms a cross-bar system with a second group of lines which cross the first group, the semiconductor circuit element being present at the area of a crossing of the cross-bar system and being connected to a line of the second group.
Claim 11
Dependent Claim 29 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the supporting member comprises a semiconductor body in which the semiconductor circuit element is provided.
Claim 12
Dependent Claim 28 words
A programmable semiconductor device as claimed in claim 9, characterized in that the line of the second group comprises at least a zone buried in the semiconductor body.
Claim 13
Dependent Claim 34 words
A programmable semiconductor device as claimed in claim 10, characterized in that the buried zone is contacted at regular distances to a strip electrically conductive material present on the surface of the semiconductor body.
Claim 14
Dependent Claim 25 words
A programmable semiconductor device as claimed in claim 11, characterized in that the strip of electrically conductive material extends substantially parallel to the buried zone.
Claim 15
Dependent Claim 39 words
A programmable semiconductor device as claimed in claim 9, characterized in that the semiconductor circuit element comprises diodes having a rectifying junction between a low-doped semiconductor zone above the buried zone and an electrode contacting the low-doped semiconductor zone.

References Cited (Backward Citations)

US3553540A Cited
US3539705A Cited
US3564354A Cited
US3575645A Cited
US4070654A Cited
US4222062A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-08 1989-01-07 1989-07-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-08 1993-01-07 1993-07-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-08 1997-01-07 1997-07-09 $7700.00 Window Closed / Lapsed

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