Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
196 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor which belongs to a first line and which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively at least at one end of the conductor belonging to the first line, which strip is separated from the semiconductor circuit element or a contact layer connected thereto electrically conductively at least over a part of its length by gas or a vacuum, which part extends separately from the electric conductor above the semiconductor circuit element or the contact layer and is separated therefrom by an intermediate space proportioned such that as a result of electrostatic attraction between the strip and the semiconductor circuit element or the contact layer a connection can be formed between the strip and the semiconductor circuit element or the contact layer; wherein said strip of electrically conductive material consists of a material different from the material used for said electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 2
Dependent Claim
196 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor which belongs to a first line and which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively at least at one end of the conductor belonging to the first line, which strip is separated from the semiconductor circuit element or a contact layer connected thereto electrically conductively at least over a part of its length by gas or a vacuum, which part extends separately from the electric conductor above the semiconductor circuit element or the contact layer and is separated therefrom by an intermediate space proportioned such that as a result of electrostatic attraction between the strip and the semiconductor circuit element or the contact layer a connection can be formed between the strip and the semiconductor circuit element or the contact layer; wherein said strip of electrically conductive material consists of a material different from the material used for said electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 3
Dependent Claim
175 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor belonging to a first line which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively to the semiconductor circuit element, in which a part of the strip extends separately from the supporting member, the semiconductor circuit element or a contact layer connected therewith electrically conductively below the electric conductor belonging to the first line, which part is separated from the conductor by gas or a vacuum with an intermediate space between the strip and the conductor proportioned such that as a result of electrostatic attraction between the strip and the conductor a connection can be formed between the strip and the conductor; wherein said strip of electrically conductive material consists of a material different from the material used for the electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 4
Dependent Claim
175 words
A programmable semiconductor device comprising a supporting member having a semiconductor circuit element and an electric conductor belonging to a first line which can be connected electrically conductively to the semiconductor circuit element, characterized in that the device comprises: a strip of electrically conductive material which is connected electrically conductively to the semiconductor circuit element, in which a part of the strip extends separately from the supporting member, the semiconductor circuit element or a contact layer connected therewith electrically conductively below the electric conductor belonging to the first line, which part is separated from the conductor by gas or a vacuum with an intermediate space between the strip and the conductor proportioned such that as a result of electrostatic attraction between the strip and the conductor a connection can be formed between the strip and the conductor; wherein said strip of electrically conductive material consists of a material different from the material used for the electric conductor and for the semiconductor metallization; and said strip of electrically conductive material is positioned below said electric conductor.
Claim 5
Dependent Claim
52 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the strip is present in a hollow space the walls of which are formed at least partly by protective material which is provided over parts of the supporting member or the semiconductor circuit element present beside the conductor.
Claim 6
Dependent Claim
33 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the strip of conductive material comprises one or more of the materials of the group nickel, cobalt and platinum.
Claim 7
Dependent Claim
28 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the thickness of the strip of electrically conductive material is at most 0.5 μm.
Claim 8
Dependent Claim
43 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the intermediate space between the separately extending part of the strip of electrically conductive material and the semiconductor circuit element or the contact layer is at most 0.5 micrometer.
Claim 9
Dependent Claim
40 words
A programmable semiconductor device as claimed in claim 2, characterized in that the intermediate space between the conductors belonging to the first line and the part of the strip of electrically conductive material extending separately is at most 0.5 micrometer.
Claim 10
Dependent Claim
67 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the first line forms part of a first group of lines which forms a cross-bar system with a second group of lines which cross the first group, the semiconductor circuit element being present at the area of a crossing of the cross-bar system and being connected to a line of the second group.
Claim 11
Dependent Claim
29 words
A programmable semiconductor device as claimed in claim 1 or 2, characterized in that the supporting member comprises a semiconductor body in which the semiconductor circuit element is provided.
Claim 12
Dependent Claim
28 words
A programmable semiconductor device as claimed in claim 9, characterized in that the line of the second group comprises at least a zone buried in the semiconductor body.
Claim 13
Dependent Claim
34 words
A programmable semiconductor device as claimed in claim 10, characterized in that the buried zone is contacted at regular distances to a strip electrically conductive material present on the surface of the semiconductor body.
Claim 14
Dependent Claim
25 words
A programmable semiconductor device as claimed in claim 11, characterized in that the strip of electrically conductive material extends substantially parallel to the buried zone.
Claim 15
Dependent Claim
39 words
A programmable semiconductor device as claimed in claim 9, characterized in that the semiconductor circuit element comprises diodes having a rectifying junction between a low-doped semiconductor zone above the buried zone and an electrode contacting the low-doped semiconductor zone.