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US4529617A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for the amorphous growth of an element with crystallization under radiation

Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1984-04-18
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Granted: 1985-07-16
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Expires: 2004-04-18
📄 Original PDF 🌐 Google Patents

Abstract

Abstract The present invention relates to a process for the amorphous growth of an element with crystallization under radiation. An element is deposited on a support contained in an enclosure under a vacuum in known manner and simultaneously one or more predetermined surfaces of the layer deposited on the support are irradiated, said irradiation being obtained by a coherent electromagnetic irradiation radiation beam having a power and wavelength suitable for desorbing said surfaces.

Inventors

  • 👤 Andre Chenevas-Paule
  • 👤 Robert Cuchet
  • 👤 Jean-Francois Eloy

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 14:38
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B23/06; C30B23/063; C30B25/00; C30B25/02; C30B25/04; C30B25/10; C30B25/105; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/913; Y10S148/00; Y10S148/093

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 116 words
A process for the amorphous growth of an element with local crystallization under coherent electromagnetic raidiation, the growth of said element being effected on a support contained in an enclosure which is under a vacuum, said enclosure containing the source of said element, which process comprises: (a) continuously depositing said element on the support in amporphous form, and (b) temporarily irradiating one or more predetermined surfaces of the layer deposited on the support during said continuous deposition, wherein said irradiation is effected by a coherent electromagnetic radiation beam, the power W of the beam being able to effect a desorption of said surface, and the wavelength λ of the coherent electromagnetic radiation being below 400 nm.
Claim 2
Dependent Claim 116 words
A process for the amorphous growth of an element with local crystallization under coherent electromagnetic raidiation, the growth of said element being effected on a support contained in an enclosure which is under a vacuum, said enclosure containing the source of said element, which process comprises: (a) continuously depositing said element on the support in amporphous form, and (b) temporarily irradiating one or more predetermined surfaces of the layer deposited on the support during said continuous deposition, wherein said irradiation is effected by a coherent electromagnetic radiation beam, the power W of the beam being able to effect a desorption of said surface, and the wavelength λ of the coherent electromagnetic radiation being below 400 nm.
Claim 3
Dependent Claim 21 words
The process according to claim 1, wherein the coherent electromagnetic radiation beam is emitted in the form of low frequency pulses.
Claim 4
Dependent Claim 19 words
The process according to claim 1, wherein the coherent electromagnetic radiation beam is a spatially scanned continuous light source.
Claim 5
Dependent Claim 18 words
The process according to claim 1, wherein doping elements are sequentially added to the source of said element.
Claim 6
Dependent Claim 15 words
The process according to claim 2, wherein the pulse emission frequency is below 5 Hz.
Claim 7
Dependent Claim 26 words
The process according to claim 5, in which the said element is silicon, wherein the temperature of the substrate is between 300° and 500 ° C.
Claim 8
Dependent Claim 12 words
The process according to claim 1, wherein the element is boron-doped silicon.
Claim 9
Dependent Claim 13 words
The process according to claim 1, wherein the said element is phosphorus-doped silicon.
Claim 10
Dependent Claim 25 words
The process according to claim 2, wherein the coherent electromagnetic radiation beam is emitted in the form of very short pulses lasting approximately 10 ns.
Claim 11
Dependent Claim 31 words
The process according to claim 1, wherein the coherent electromagnetic radiation beam is a laser beam having a wavelength λ of about 350 nm and a power W of 35 MW.

References Cited (Backward Citations)

US3343829A Cited
US3519901A Cited
US4317844A Cited
US4059461A Cited
US4187126A Cited
US4309225A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-15 1989-01-14 1989-07-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-15 1993-01-14 1993-07-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-15 1997-01-14 1997-07-16 $7700.00 Window Closed / Lapsed

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