US4549195A
Expired / Lapsed
US
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Heterojunction semiconductor device
Assignee: Westinghouse Electric Corp
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Filing: 1983-04-14
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Granted: 1985-10-22
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Expires: 2003-04-14
Abstract
Abstract A semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode and wherein the layer having the greatest energy band gap fully covers the boundaries or perimeter of the layer having a lesser energy band gap to reduce surface leakage current. Further, a semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode wherein the layer having the greatest energy band gap has spaced-apart P regions to form the anode of the heterojunction diode whereby the heterojunction diode is buried below the surface of the layer having the greatest energy band gap. The invention reduces the problem of surface and bulk leakage across heterojunction diodes.
Inventors
- 👤 Nathan Bluzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/826; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10P; H10P14/00; H10P14/60; H10P14/69
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
114 words
A semiconductor device comprising a semiconductor substrate having an upper surface, a first layer of n-type semiconductor material having a first composition and a first energy band gap, said first layer supported by said substrate and terminating interior of the edge of said upper surface of said substrate, a second layer of p-type semiconductor material having a second composition and a second energy band gap, said second layer covering said first layer and extending beyond the perimeter of said first layer and onto said substrate, a layer of passivation over said second layer, first means for making electrical contact to said first layer and second means for making electrical contact to said second layer.
Claim 2
Dependent Claim
114 words
A semiconductor device comprising a semiconductor substrate having an upper surface, a first layer of n-type semiconductor material having a first composition and a first energy band gap, said first layer supported by said substrate and terminating interior of the edge of said upper surface of said substrate, a second layer of p-type semiconductor material having a second composition and a second energy band gap, said second layer covering said first layer and extending beyond the perimeter of said first layer and onto said substrate, a layer of passivation over said second layer, first means for making electrical contact to said first layer and second means for making electrical contact to said second layer.
Claim 3
Dependent Claim
22 words
The semiconductor device of claim 1 wherein said first energy band gap has a value less than said second energy band gap.
Claim 4
Dependent Claim
15 words
The semiconductor device of claim 1 wherein said semiconductor substrate includes cadmium telluride of n-type.
Claim 5
Dependent Claim
19 words
A semiconductor device of claim 1 wherein said first composition includes an intermixture of mercury telluride and cadmium telluride.
Claim 6
Dependent Claim
28 words
The semiconductor device of claim 4 wherein the ratio of mercury telluride to cadmium telluride forms an energy band gap in the range from eight to twelve micrometers.
Claim 7
Dependent Claim
19 words
The semiconductor device of claim 1 wherein said second composition includes an intermixture of mercury telluride and cadmium telluride.
Claim 8
Dependent Claim
31 words
The semiconductor device of claim 6 wherein said ratio of mercury telluride to cadmium telluride is adjusted to provide an energy band gap in the range of three to five micrometers.
Claim 9
Dependent Claim
14 words
The semiconductor device of claim 1 wherein said layer of passivation includes zinc sulfide.
Claim 10
Dependent Claim
26 words
The semiconductor device of claim 1 wherein said second means of making electrical contact includes indium metallization passing through an opening in said layer of passivation.
Claim 11
Dependent Claim
35 words
The semiconductor device of claim 1 wherein said substrate includes n-type mercury cadmium telluride having an energy band gap in the three to five micrometer range with a layer of cadmium telluride of n-type thereover.
Claim 12
Dependent Claim
67 words
A semiconductor device for sensing radiant energy comprising: a heterojunction diode formed by first and second layers of semiconductor material each having a different energy band gap, a substrate for supporting said first layer, said second layer having the greatest energy band gap and fully covering said first layer and the perimeter of said first layer and a portion of said substrate to reduce surface leakage current.
Claim 13
Dependent Claim
67 words
A semiconductor device for sensing radiant energy comprising: a heterojunction diode formed by first and second layers of semiconductor material each having a different energy band gap, a substrate for supporting said first layer, said second layer having the greatest energy band gap and fully covering said first layer and the perimeter of said first layer and a portion of said substrate to reduce surface leakage current.
Claim 14
Dependent Claim
18 words
The semiconductor device of claim 15 wherein said substrate is of semiconductor material including cadmium telluride of n-type.
Claim 15
Dependent Claim
19 words
The semiconductor device of claim 15 wherein said first layer includes an intermixture of mercury telluride and cadmium telluride.
Claim 16
Dependent Claim
27 words
The semiconductor device of claim 17 wherein the ratio of mercury telluride to cadmium telluride forms an energy band gap within the eight to twelve micrometer range.
Claim 17
Dependent Claim
19 words
The semiconductor device of claim 15 wherein said second layer includes an intermixture of mercury telluride and cadmium telluride.
Claim 18
Dependent Claim
31 words
The semiconductor device of claim 19 wherein the ratio of mercury telluride to cadmium telluride is adjusted to provide an energy band gap in the range of three to five micrometers.
Claim 19
Dependent Claim
20 words
The semiconductor device of claim 15 further including a layer of passivation including zinc sulfide over and said second layer.
Claim 20
Dependent Claim
41 words
The semiconductor device of claim 15 wherein said substrate includes n-type mercury cadmium telluride having an energy band gap in the three to five micrometer range and including a layer of cadmium telluride of n-type over said n-type mercury cadmium telluride.
Claim 21
Dependent Claim
30 words
The semiconductor device of claim 15 wherein said layer of passivation includes silicon dioxide deposited by a low temperature process in the temperature range from 100° C. to 150° C.
Claim 22
Dependent Claim
125 words
A semiconductor device comprising a semiconductor substrate having an upper surface, a first layer of N-type semiconductor material having a first composition and a first energy band gap, said first layer supported by said substrate, a second layer of semiconductor material having a second composition and a second energy band gap, said second layer having spaced-apart P regions in contact with said first layer to form pn heterojunctions, the region between said spaced-apart P regions of said second layer being N-type conductivity material and being in ohmic contact with said first layer, a layer of passivation over said second layer, first means for making electrical contact to said first layer and second means for making electrical contact to said P regions in said second layer.
Claim 23
Dependent Claim
125 words
A semiconductor device comprising a semiconductor substrate having an upper surface, a first layer of N-type semiconductor material having a first composition and a first energy band gap, said first layer supported by said substrate, a second layer of semiconductor material having a second composition and a second energy band gap, said second layer having spaced-apart P regions in contact with said first layer to form pn heterojunctions, the region between said spaced-apart P regions of said second layer being N-type conductivity material and being in ohmic contact with said first layer, a layer of passivation over said second layer, first means for making electrical contact to said first layer and second means for making electrical contact to said P regions in said second layer.
Claim 24
Dependent Claim
22 words
The semiconductor device of claim 24 wherein said first energy band gap has a value less than said second energy band gap.
Claim 25
Dependent Claim
15 words
The semiconductor device of claim 23 wherein said semiconductor substrate includes cadmium telluride of N-type.
Claim 26
Dependent Claim
19 words
A semiconductor device of claim 24 wherein said first composition includes an intermixture of mercury telluride and cadmium telluride.
Claim 27
Dependent Claim
34 words
The semiconductor device of claim 27 wherein the ratio of mercury telluride and cadmium telluride forms a first layer having a first energy band gap in the range from 8 to 12 micrometers wavelength.
Claim 28
Dependent Claim
19 words
The semiconductor device of claim 24 wherein said second composition includes an intermixture of mercury telluride and cadmium telluride.
Claim 29
Dependent Claim
33 words
The semiconductor device of claim 29 wherein the ratio of mercury telluride to cadmium telluride is adjusted to provide a second energy band gap in the range of 3 to 5 micrometers wavelength.
Claim 30
Dependent Claim
14 words
The semiconductor device of claim 24 wherein said layer of passivation includes zinc sulfide.
Claim 31
Dependent Claim
26 words
The semiconductor device of claim 24 wherein said second means for making electrical contact includes indium metallization passing through an opening in said layer of passivation.
Claim 32
Dependent Claim
74 words
A semiconductor device for sensing ultraviolet radiant energy comprising: a heterojunction diode formed by first and second layers of semiconductor material each having a different energy band gap, a substrate for supporting said first layer, said second layer having the greatest energy band gap and having spaced-apart P regions in contact with said first layer with the region between said spaced apart P regions being N-type, a layer of passivation over said second layer.
Claim 33
Dependent Claim
74 words
A semiconductor device for sensing ultraviolet radiant energy comprising: a heterojunction diode formed by first and second layers of semiconductor material each having a different energy band gap, a substrate for supporting said first layer, said second layer having the greatest energy band gap and having spaced-apart P regions in contact with said first layer with the region between said spaced apart P regions being N-type, a layer of passivation over said second layer.
Claim 34
Dependent Claim
18 words
The semiconductor device of claim 37 wherein said substrate is of semiconductor material including cadmium telluride of N-type.
Claim 35
Dependent Claim
19 words
The semiconductor device of claim 37 wherein said first layer includes an intermixture of mercury telluride and cadmium telluride.
Claim 36
Dependent Claim
33 words
The semiconductor device of claim 39 wherein the ratio of mercury telluride and cadmium telluride forms a first layer having an energy band gap in the range from 8 to 12 micrometer wavelength.
Claim 37
Dependent Claim
19 words
The semiconductor device of claim 37 wherein said second layer includes an intermixture of mercury telluride and cadmium telluride.
Claim 38
Dependent Claim
36 words
The semiconductor device of claim 41 wherein the ratio of mercury telluride to cadmium telluride is adjusted to provide a second layer having an energy band gap in the range of 3 to 5 micrometer wavelength.
Claim 39
Dependent Claim
14 words
The semiconductor device of claim 37 wherein said layer of passivation includes zinc selenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-21 | 1989-04-22 | 1989-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-21 | 1993-04-22 | 1993-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-21 | 1997-04-22 | 1997-10-22 | $7700.00 | Window Closed / Lapsed |