US4553317A
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Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
Assignee: NOJIRI HIDETOSHI 1-23 MIDORIGAOKA MATSUDO-SHI CHIBA-KEN
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Filing: 1982-10-29
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Granted: 1985-11-19
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Expires: 2002-10-29
Abstract
Abstract In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition: X.sub.A <X.sub.B, X.sub.A +E.sub.gA <X.sub.B +E.sub.gB where X A is the electron affinity of the semiconductor A, E gA is the forbidden band width of the semiconductor A, X B is the electron affinity of the semiconductor B and E gB is the forbidden band width of the semiconductor B, are layered and an electric field is applied in parallelism to the layer, whereby an impact ionization coefficient rate is obtained by junction of the different kinds of semiconductors. At least one of the semiconductors A and B is composed of a mixed crystal comprising three or more elements, and the mole fraction of said one semiconductor is varied to thereby control the value of the impact ionization coefficient rate.
Inventors
- 👤 Hiroyuki Sakaki
- 👤 Tomonori Tanoue
- 👤 Hidetoshi Nojiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:34
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1272; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D8/00; H10D8/40; H10D8/50; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; H10F71/134; H10F71/135; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
155 words
A method of obtaining an impact ionization coefficient rate, comprising the steps of: forming a layer of a semiconductor A and a semiconductor B so that the following conditions are satisfied: X.sub.A <X.sub.B, X.sub.A +E.sub.gA <X.sub.B +E.sub.gB wherein X A is the electron affinity of the semiconductor A, E gA is the forbidden band width of the semiconductor A, X B is the electron affinity of the semiconductor B and E gB is the forbidden band width of the semiconductor B; irradiating said layer with light to generate holes and electrons; separating said holes and electrons by diffusion into the layers of the semiconductors A and B, respectively; and applying a direct-current electric field in a direction parallel to said layer to accelerate said holes and electrons in said layers of the semiconductors A and B, respectively, thereby causing avalanche multiplication due to impact ionization, said electric field being provided independently of said irradiating light.
Claim 2
Independent Claim
155 words
A method of obtaining an impact ionization coefficient rate, comprising the steps of: forming a layer of a semiconductor A and a semiconductor B so that the following conditions are satisfied: X.sub.A <X.sub.B, X.sub.A +E.sub.gA <X.sub.B +E.sub.gB wherein X A is the electron affinity of the semiconductor A, E gA is the forbidden band width of the semiconductor A, X B is the electron affinity of the semiconductor B and E gB is the forbidden band width of the semiconductor B; irradiating said layer with light to generate holes and electrons; separating said holes and electrons by diffusion into the layers of the semiconductors A and B, respectively; and applying a direct-current electric field in a direction parallel to said layer to accelerate said holes and electrons in said layers of the semiconductors A and B, respectively, thereby causing avalanche multiplication due to impact ionization, said electric field being provided independently of said irradiating light.
Claim 3
Dependent Claim
47 words
A method according to Claim 1, wherein at least one of said semiconductors A and B is a mixed crystal including three or more elements and the value of the impact ionization coefficient rate is controlled by varying the mole fraction of said at least one semicondutor.
Claim 4
Dependent Claim
46 words
A method according to claim 1, further comprising the steps of introducing acceptor impurity into said semiconductor A and donor impurity into said semiconductor B, wherein an electric field created thereby in a direction perpendicular to said layer accelerates the separation of said holes and electrons.
Claim 5
Dependent Claim
46 words
A method according to claim 2, further comprising the steps of introducing acceptor impurity into said semiconductor A and donor impurity into said semiconductor B, wherein and electric field created thereby in a direction perpendicular to said layer accelerates the separation of said holes and electrons.
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