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US4565607A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of fabricating an electroplated substrate

Assignee: United Solar Systems Corp
•
Filing: 1985-05-16
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Granted: 1986-01-21
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Expires: 2005-05-16
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Abstract

Abstract An electroplated substrate, characterized by a substantially reduced number of surface defects, for the fabrication of thin film electronic devices. The substrate is prepared in an electroforming process by electroplating onto and removing a metallic layer from the surface of a specifically prepared, substantially defect-free mandril. The substrate may be provided with a preselected surface finish by either (1) texturing the mandril or (2) controlling the parameters of the electroplating process to control the morphology of the deposit. The substrate is especially adapted for the fabrication of thin film photoresponsive devices which incorporate specular or diffuse back reflectors, since the texture may be controlled to provide for the appropriate type of reflectivity. Large area, thin film semiconductor devices incorporating the electroplated substrate are readily scribed to form electrically isolated small area segments for the fabrication of modules, arrays and the like.

Inventors

  • 👤 Joseph J. Hanak
  • 👤 Prem Nath
  • 👤 Masatsugu Izu
  • 👤 James Young

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 09:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; C; C25; C25D; C25D1/00; C25D1/04

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 163 words
A method of fabricating a large area semiconductor device, said device divided into a plurality of small area segments; each small area segment including a thin film body of semiconductor material and a substrate having a substantially defect-free surface; said method including the steps of: electroplating, from a mandril, a relatively thin metallic substrate characterized by a substantially defect free deposition surface having features which (1) provide for the reflection of light and (2) do not substantially interfere with the subsequent deposition of the uniform and homogeneous thin film body of semiconductor material thereupon, depositing the thin film body of semiconductor material atop the substantially defect free deposition surface of the substrate; removing portions of the (1) body of semiconductor material and/or (2) subjacent metallic substrate; and securing an insulating support member to the surface of the metallic substrate opposite the substantially defect-free deposition surface thereof; whereby the large area semiconductor device is divided into a plurality of electrically discrete small area segments.
Claim 2
Independent Claim 163 words
A method of fabricating a large area semiconductor device, said device divided into a plurality of small area segments; each small area segment including a thin film body of semiconductor material and a substrate having a substantially defect-free surface; said method including the steps of: electroplating, from a mandril, a relatively thin metallic substrate characterized by a substantially defect free deposition surface having features which (1) provide for the reflection of light and (2) do not substantially interfere with the subsequent deposition of the uniform and homogeneous thin film body of semiconductor material thereupon, depositing the thin film body of semiconductor material atop the substantially defect free deposition surface of the substrate; removing portions of the (1) body of semiconductor material and/or (2) subjacent metallic substrate; and securing an insulating support member to the surface of the metallic substrate opposite the substantially defect-free deposition surface thereof; whereby the large area semiconductor device is divided into a plurality of electrically discrete small area segments.
Claim 3
Dependent Claim 42 words
A method as in claim 1, including the further steps of: depositing an electrode atop the body of semiconductor material; and removing those portions of the electrode which correspond to the subjacent portions of the body of semiconductor material and metallic substrate.
Claim 4
Dependent Claim 33 words
A method as in claim 2, including the further step of removing the portions of the (1) electrode, (2) body of semiconductor material, and (3) metallic substrate in a single step scribing process.
Claim 5
Dependent Claim 32 words
A method as in claim 3, wherein the scribing process is selected essentially from the group of removal techniques including: chemical etching; plasma etching; laser scribing; water jet scribing; and combinations thereof.
Claim 6
Dependent Claim 32 words
A method as in claim 3, including the further step of removing the portions of the (1) electrode, (2) body of semiconductor material, and (3) metallic substrate in a multi-step scribing process.
Claim 7
Dependent Claim 33 words
A method as in claim 5, wherein the multi-step scribing process is selected essentially from the group of removal techniques including: chemical etching; plasma etching; laser scribing; water jet scribing; and combinations thereof.
Claim 8
Dependent Claim 23 words
A method as in claim 1, including the further step of electrically connecting the discrete small area segments of the large area device.
Claim 9
Dependent Claim 22 words
A method as in claim 1, including the further step of forming the metallic substrate to additionally provide a light reflective function.
Claim 10
Dependent Claim 51 words
A method as in claim 8, including the further step of depositing a multi-function layer atop the highly reflective coating, said multi-function layer adapted to (1) passivate the subjacent reflective coating and the subsequently deposited semiconductor material, and (2) facilitate adherence of the subsequently deposited semiconductor material to the reflective coating.
Claim 11
Dependent Claim 29 words
A method as in claim 8, including the further step of texturing the substantially defect-free deposition surface of the substrate, whereby the textured substrate provides a diffuse back reflector.
Claim 12
Dependent Claim 32 words
A method as in claim 8, including the further step of forming the substantially defect-free deposition surface of the substrate as a smooth veneer, whereby the smooth substrate provides specular back reflector.
Claim 13
Dependent Claim 26 words
A method as in claim 1, including the further step of depositing the body of semiconductor material as at least one triad of p-i-n type layers.
Claim 14
Dependent Claim 27 words
A method as in claim 1, including the further step of forming the insulating support member from at least a single layer of a synthetic plastic resin.
Claim 15
Dependent Claim 45 words
A method as in claim 13, including the further step of forming the insulating support member as a dual layered structure comprising: the synthetic plastic resin layer in contact with the substrate material, and the opposite surface of which has secured thereto a rigidifying member.
Claim 16
Dependent Claim 60 words
A method as in claim 1, wherein the electroplating process includes the further steps of: providing a mandril; treating the mandril so as to provide a substantially defect-free outer surface thereon; electroplating a metallic substrate material onto the defect-free mandril surface; and removing the substrate material from the mandril surface for replicating the substantially defect-free outer surface of the mandril.
Claim 17
Dependent Claim 16 words
A method as in claim 1, wherein said metallic substrate is formed of a nickel alloy.
Claim 18
Dependent Claim 20 words
A method as in claim 16, including the further step of providing a 0.2 to 4 mil thick metallic substrate.

References Cited (Backward Citations)

US2433441A Cited
US1704247A Cited
US3414487A Cited
US3463719A Cited
US3767537A Cited
US4053370A Cited
US4169018A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-01-20 1989-07-22 1990-01-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-01-20 1993-07-22 1994-01-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-01-20 1997-07-22 1998-01-21 $7700.00 Window Closed / Lapsed

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