CCD Picture element defect compensating apparatus

Claim 2

A solid-state image sensing apparatus comprising: (a) solid-state image sensor means for generating signal charges in response to incident image light thereto to produce an electrical CCD output signal at its output terminal, said CCD output signal including an image signal component corresponding to the signal charges and a reset pulse signal component arising due to the mixing of a reset pulse signal supplied to said image sensor means into the CCD output signal; and (b) picture element compensating means for, when said image sensor means contains a defective picture element, detecting in an analog manner an increment of a signal level corresponding to a dark current generated at the defective picture element, and for compensating the picture element defect in such a way as to reduce, by the increment of said detected signal level, the mixed reset pulse component contained in the CCD output signal produced from said defective picture element, whereby the output signal from said image sensor means is substantially equivalent to that of a normal image sensor.

Claim 3

The device accoding to claim 1, wherein picture element defect compensating means comprises: memory means for storing data representing a position of the defective picture element of said image sensor means; and amplitude controller means, connected to said memory means, for reducing the amplitude of said reset pulse signal by said dark current component generated at said defective picture element according to the position data of the defective picture element only at the time of outputting the image signal from said defective picture element.

Claim 4

The device according to claim 2, wherein said amplitude controller means reduces the amplitude of said reset pulse signal so that the sum of the increment of the signal level corresponding to the dark current generated at said defective picture element and said reduced mixed pulse component contained in the CCD output signal produced from said defective picture element is substantially equal to a mixed reset pulse component contained in a CCD output signal produced from another normal picture element of said image sensor means.

Claim 5

The device according to claim 3, wherein said memory means and said amplitude controller means are provided separately from said image sensor means.

Claim 6

The device according to claim 3, wherein said memory means and said amplitude controller means are at least partially assembled inside said image sensor means.

Claim 7

The device according to claim 3, wherein said memory means and said amplitude controller means are previously assembled into said image sensor means.

Claim 8

The device according to claim 3, wherein said picture element defect compensating means further comprises a thermo-sensing means previously formed in said image sensor means, for sensing temperature of said image sensor means to generate a temperature signal.

Claim 9

The device according to claim 7, wherein said amplitude controller means is connected to said temperature detector means, for detecting an increment of a signal level corresponding to a dark current which is generated at said defective picture element and changes with temperature, and for reducing the amplitude of said reset pulse signal so that the sum of the detected increment of the signal level and said reduced mixed pulse component contained in the CCD output signal produced from said defective picture element is substantially equal to the mixed reset pulse component contained in the CCD output signal produced from said normal picture element of said image sensor means.

Claim 10

The device according to claim 1, wherein said picture element defect compensating means reduces the mixed reset pulse component contained in the CCD output signal produced from said defective picture element by temporarily decreasing the amplitude of the reset pulse signal at the time of reading out the image signal generated at said defective picture element.

Claim 11

The device according to claim 1, wherein said image sensor means comprises: a semiconductive substrate; photosensing cells formed on said sbustrate in a matrix fashion, for generating charge packet or signal carriers in response to incident light thereto and for storing therein the signal carriers; charge transfer means formed on said substrate, for successively transferring the signal carriers stored in said photosensing cell to the output terminal of said image sensor means; charge sensing means formed on said substrate and, for receiving an output gate signal and for reading out said signal charges in response to the output gate signal, said charge sensing means including an output gate electrode and an electrically floating layer, which are formed on said substrate, said electrode and said layer forming a first parasitic capacitance therebetween; and reset means formed on said substrate, for receiving the reset pulse signal and for discharging, at fixed periods, the signal charges transferred to said charge sensing means in response to the reset pulse signal, said reset means having a reset gate electrode formed on said substrate substantially adjacent to said electrically floating layer, and an electrically floating drain layer, said reset gate electrode and said drain layer forming therebetween a second parasitic capacitance through which the reset pulse signal is leaked to the CCD output signal of said image sensor means.

Claim 12

The device according to claim 10, wherein said picture element defect compensating means reduces the mixed reset pulse component contained in the CCD output signal from said defective picture element by temporarily decreasing the amplitude of the reset pulse signal at the time of reading out the image signal generated at said defective picture element.

Claim 13

The device according to claim 10, wherein, at the time of reading out the image signal produced from said defective picture element, said picture element compensating means generates, during an ON-period of the reset pulse signal supplied to said image sensor means, a pulse signal with its polarity opposite to that of said reset pulse signal, and reduces or decreases the mixed reset pulse component contained in the CCD output signal from said defective picture element in such a manner as to temporarily apply the pulse signal to said output gate electrode and, at the same time, apply the pulse signal to the CCD output signal produced from said image sensor means through said first parasitic capacitance.