US4570332A
Expired / Lapsed
US
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Method of forming contact to thin film semiconductor device
Assignee: Sharp Corp
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Filing: 1983-05-09
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Granted: 1986-02-18
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Expires: 2003-05-09
Abstract
Abstract A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface comprising the steps of applying an electrical pulse signal across the semiconductor layer at the desired region to lower the resistivity of the region and then forming an electrode film on the desired region of said semiconductor layer opposite said conductive surface, is disclosed. In one alternative embodiment, an electrode film is formed on the thin film semiconductor layer and thereafter an electrical pulse signal is applied across the semiconductor layer at the desired region to lower the resistivity of the region.
Inventors
- 👤 Yutaka Yamauchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:39
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85; H10F; H10F19/00; H10F19/30; H10F19/31; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/20; H10F77/206; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
67 words
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface, comprising the steps of: applying an electrical pulse signal across said semiconductor layer at said desired region to lower the resistivity of said region; and forming an electrode film on said desired region of said semiconductor layer opposite said conductive surface.
Claim 2
Independent Claim
67 words
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface, comprising the steps of: applying an electrical pulse signal across said semiconductor layer at said desired region to lower the resistivity of said region; and forming an electrode film on said desired region of said semiconductor layer opposite said conductive surface.
Claim 3
Dependent Claim
19 words
The method as recited in claim 1, wherein the electrical pulse signal includes a pulse of a single polarity.
Claim 4
Dependent Claim
24 words
The method as recited in claim 2, wherein the pulse has a voltage of 50 volts and a pulse width of 4 n sec.
Claim 5
Dependent Claim
19 words
The method as recited in claim 1, wherein the electrical pulse signal includes pulses of positive and negative polarities.
Claim 6
Dependent Claim
37 words
The method as recited in claim 1, wherein said thin film semiconductor layer includes a single layer with a junction selected from the group consisting of a p-n junction, p-i-n junction, M-I-S junction, and a Schottky barrier.
Claim 7
Dependent Claim
40 words
The method as recited in claim 1, wherein said thin film semiconductor layer includes a plurality of layers with a junction selected from the group consisting on a p-n junction, a p-i-n junction, a M-I-S junction, and a Schottky barrier.
Claim 8
Dependent Claim
16 words
The method as recited in claim 1, wherein the thin film semiconductor layer comprises amorphous silicon.
Claim 9
Dependent Claim
36 words
The method as recited in claim 1, wherein the conductive surface comprises a substrate formed of a metal selected from the group consisting of stainless steel, iron, copper, silver, aluminum, aluminum alloys, nickel, and iron-nickel alloys.
Claim 10
Dependent Claim
38 words
The method as recited in claim 1, wherein the electrode film is selected from the group consisting of a mixture of In 2 O 3 and SnO 2 , a mixture of SnO 2 and Sb, and aluminum.
Claim 11
Dependent Claim
20 words
The method as recited in claim 1, wherein the conductive surface comprises a conductive film formed on a glass plate.
Claim 12
Dependent Claim
53 words
The method as recited in claim 1, wherein said step of forming an electrode film on said desired region of said semiconductor layer opposite said conductive surface is performed before said step of applying an electrical pulse signal across said semiconductor layer at a desired region to lower the resistivity of said region.
Claim 13
Dependent Claim
53 words
The method as recited in claim 1, wherein said step of forming an electrode film on said desired region of said semiconductor layer opposite said conductive surface is performed after said step of applying an electrical pulse signal across said semiconductor layer at a desired region to lower the resistivity of said region.
Claim 14
Dependent Claim
34 words
The method as recited in claim 1, wherein said step of applying an electrical pulse signal across said semiconductor layer at said desired region lowers the resistivity of said region by destroying said junction.
Claim 15
Dependent Claim
23 words
The method as recited in claim 1, wherein the region of lowered resistivity has a resistance of about 1 to about 100 ohms.
Claim 16
Independent Claim
89 words
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein, comprising the steps of: depositing a semiconductor layer on a surface; depositing a transparent electrode film on the surface of said semiconductor layer opposite said conductive surface; etching said transparent electrode film to divide it into two electrode zones, one of said zones being located over said desired region; applying an electrical pulse signal across said desired region of said semiconductor layer to lower the resistivity of said region.
Claim 17
Independent Claim
89 words
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein, comprising the steps of: depositing a semiconductor layer on a surface; depositing a transparent electrode film on the surface of said semiconductor layer opposite said conductive surface; etching said transparent electrode film to divide it into two electrode zones, one of said zones being located over said desired region; applying an electrical pulse signal across said desired region of said semiconductor layer to lower the resistivity of said region.
Claim 18
Dependent Claim
37 words
The method as recited in claim 15, wherein said thin film semiconductor layer includes a single layer with a junction selected from the group consisting of a p-n junction, p-i-n junction, M-I-S junction, and a Schottky barrier.
Claim 19
Dependent Claim
40 words
The method as recited in claim 16, wherein said thin film semiconductor layer includes a plurality of layers with a junction selected from the group consisting of a p-n junction, a p-i-n junction, a M-I-S junction, and a Schottky barrier.
Claim 20
Dependent Claim
38 words
The method as recited in claim 15, wherein said transparent electrode film is selected from the group consisting of a mixture of In 2 O 3 and SnO 2 , and a mixture of SnO 2 and Sb.
Claim 21
Dependent Claim
22 words
The method as recited in claim 18, wherein the transparent electrode film has a thickness of about 600 to about 1000 angstroms.
Claim 22
Dependent Claim
53 words
The method as recited in claim 15, wherein said step of depositing a transparent electrode film on the surface of said semiconductor layer opposite said conductive surface is performed before said step of applying an electrical pulse signal across said desired region of said semiconductor layer to lower the resistivity of said region.
Claim 23
Dependent Claim
53 words
The method as recited in claim 15, wherein said step of depositing a transparent electrode film on the surface of said semiconductor layer opposite said conductive surface is performed after said step of applying an electrical pulse signal across said desired region of said semiconductor layer to lower the resistivity of said region.
Claim 24
Dependent Claim
38 words
The method as recited in claim 15, wherein said step of applying an electrical pulse signal across said desired region located under one of said two electrode zones lowers the resistivity of said region by destroying said junction.
Claim 25
Dependent Claim
23 words
The method as recited in claim 15, wherein the region of lowered resistivity has a resistance of about 1 to about 100 ohms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-17 | 1989-08-19 | 1990-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-17 | 1993-08-19 | 1994-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-17 | 1997-08-19 | 1998-02-18 | $7700.00 | Window Closed / Lapsed |