Thyristor cathode and transistor emitter structures with insulator islands

Claim 1

In a bipolar transistor semiconductor device having an emitter terminal and a collector terminal, and a base terminal for controlling current flow through said collector and emitter terminals, and wherein said device includes a semiconductor wafer having three regions of alternating conductivity type overlying each other, the inner region comprising the base region and the outer regions comprising the emitter and collector regions of said device, the emitter region including a plurality of individual cellular regions, the improvement comprising: a plurality of adjacently spaced regions of predetermined resistivity extending from said base region substantially centrally into each of said cellular regions, respectively, each of said regions of predetermined resistivity being of higher resistivity than its respective surrounding cellular region, each of said cellular regions extending into said base region from a common surface thereof so as to be completely surrounded by said base region; a base electrode situated atop said base region and surrounding each of said cellular regions; an insulating layer overlying each said region of predetermined resistivity, respectively, for precluding any significant current flow from said base to said cellular regions during the nonconducting state of said device; and conductive means electrically interconnecting said cellular regions.