US4587105A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integratable oxygen sensor
Assignee: Honeywell Inc
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Filing: 1984-05-17
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Granted: 1986-05-06
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Expires: 2004-05-17
Abstract
Abstract An O 2 sensor built on a silicon chip which has a SiO 2 dielectric layer bridging over a depression in the surface of the chip. A ZrO 2 layer overlies the bridge and a pair of spaced apart palladium electrodes are on the surface of the ZrO 2 . A heater for the ZrO 2 is embedded in the SiO 2 bridge.
Inventors
- 👤 Ulrich Bonne
- 👤 Robert G. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:36
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/406; G01N27/407; G01N27/4071
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
69 words
An oxygen sensor comprising: a semiconductor substrate body with a depression therein; a dielectric thin film on said body and bridging said depression; a thin film heater embedded within the dielectric film bridge; a ZrO 2 film over said dielectric film bridge; and, first and second conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the dielectric film.
Claim 2
Dependent Claim
69 words
An oxygen sensor comprising: a semiconductor substrate body with a depression therein; a dielectric thin film on said body and bridging said depression; a thin film heater embedded within the dielectric film bridge; a ZrO 2 film over said dielectric film bridge; and, first and second conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the dielectric film.
Claim 3
Dependent Claim
24 words
The sensor according to claim 1 in which the space between the first and second conductive films defines a gap located over the depression.
Claim 4
Dependent Claim
14 words
The sensor according to claim 1 in which the semiconductor substrate is of silicon.
Claim 5
Dependent Claim
16 words
The sensor according to claim 3 in which the dielectric thin film is of silicon dioxide.
Claim 6
Dependent Claim
16 words
The sensor according to claim 3 in which the dielectric thin film is of silicon nitride.
Claim 7
Dependent Claim
17 words
The sensor according to claim 1 in which the first and second conductive films are palladium films.
Claim 8
Dependent Claim
18 words
The sensor according to claim 1 in which at least the first conductive film is a palladium film.
Claim 9
Dependent Claim
86 words
An oxygen sensor comprising: a silicon substrate body with a depression therein; a silicon dioxide thin film on said body and bridging said depression; a thin film heater embedded in the SiO 2 film bridge; a ZrO 2 film on said SiO 2 film bridge; and, first and second conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the SiO 2 film, said conductive films selected from the group consisting of palladium, platinum and nickel.
Claim 10
Dependent Claim
86 words
An oxygen sensor comprising: a silicon substrate body with a depression therein; a silicon dioxide thin film on said body and bridging said depression; a thin film heater embedded in the SiO 2 film bridge; a ZrO 2 film on said SiO 2 film bridge; and, first and second conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the SiO 2 film, said conductive films selected from the group consisting of palladium, platinum and nickel.
Claim 11
Dependent Claim
95 words
An oxygen sensor comprising: a semiconductor substrate body having a major planar surface with a depression therein; a dielectric thin film having a heater film embedded therein; a ZrO 2 film, said dielectric film overlaying said substrate major planar surface and bridging said depression so that a hollow exists under said dielectric film at said depression, said ZrO 2 film overlaying said dielectric film in the bridging area; and, a pair of conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from said dielectric film.
Claim 12
Dependent Claim
95 words
An oxygen sensor comprising: a semiconductor substrate body having a major planar surface with a depression therein; a dielectric thin film having a heater film embedded therein; a ZrO 2 film, said dielectric film overlaying said substrate major planar surface and bridging said depression so that a hollow exists under said dielectric film at said depression, said ZrO 2 film overlaying said dielectric film in the bridging area; and, a pair of conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from said dielectric film.
Claim 13
Dependent Claim
23 words
The sensor according to claim 9 in which the space between said pair of conductive films defines a gap located over the depression.
Claim 14
Dependent Claim
14 words
The sensor according to claim 9 in which the semiconductor substrate is of silicon.
Claim 15
Dependent Claim
16 words
The sensor according to claim 9 in which the dielectric thin film is of silicon dioxide.
Claim 16
Dependent Claim
16 words
The sensor according to claim 9 in which the dielectric thin film is of silicon nitride.
Claim 17
Dependent Claim
21 words
The sensor according to claim 9 in which at least one of the pair of conductive films is a palladium film.
Claim 18
Dependent Claim
99 words
An oxygen sensor comprising: a silicon substrate body having a major planar surface with a depression therein; a thin film of silicon dioxide having a heater film embedded therein; a ZrO 2 film, said silicon dioxide film overlaying said substrate surface and bridging said depression so that a hollow exists under said silicon dioxide film at said depression, said ZrO 2 film overlaying said silicon dioxide film in the bridging area; and, a pair of conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the SiO 2 film.
Claim 19
Dependent Claim
99 words
An oxygen sensor comprising: a silicon substrate body having a major planar surface with a depression therein; a thin film of silicon dioxide having a heater film embedded therein; a ZrO 2 film, said silicon dioxide film overlaying said substrate surface and bridging said depression so that a hollow exists under said silicon dioxide film at said depression, said ZrO 2 film overlaying said silicon dioxide film in the bridging area; and, a pair of conductive films spaced apart one from the other on the surface of said ZrO 2 film which is away from the SiO 2 film.
Claim 20
Dependent Claim
21 words
The sensor according to claim 15 in which at least one of the pair of conductive films is a palladium film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-05 | 1989-11-04 | 1990-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-05 | 1993-11-04 | 1994-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-05 | 1997-11-04 | 1998-05-06 | $7700.00 | Window Closed / Lapsed |