US4597159A
Expired / Lapsed
US
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Method of manufacturing SiO2 -Si interface for floating gate semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-02-27
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Granted: 1986-07-01
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Expires: 2005-02-27
Abstract
Abstract A semiconductor device is manufactured by forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type, and a first nonmonocrystalline silicon film is formed on the first insulating film. A second insulating film is deposited on the first nonmonocrystalline silicon film by CVD, sputtering or molecular beam method. An impurity is then ion-implanted in the first nonmonocrystalline silicon film through the second insulating film. The second insulating film is then removed to expose the surface of the first nonmonocrystalline silicon film doped with the impurity, and a thermal oxide film is formed on the exposed portion of the first nonmonocrystalline silicon film. Subsequently, a second nonmonocrystalline silicon film is formed on the thermal oxide film, and a third insulating film is formed on the second nonmonocrystalline silicon film.
Inventors
- 👤 Toshiro Usami
- 👤 Yuuichi Mikata
- 👤 Kazuyoshi Shinada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:09
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/138; Y10S148/169
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type; (b) forming a first nonmonocrystalline silicon film on said first insulating film; (c) depositing a second insulating film on said first nonmonocrystalline silicon film under a condition that said first nonmonocrystalline silicon film is not oxidized but that an insulating film can be deposited on said first nonmonocrystalline silicon film; (d) ion-implanting an impurity in said first nonmonocrystalline silicon film through said second insulating film; (e) removing said second insulating film to expose said first nonmonocrystalline silicon film doped with the impurity; (f) forming, by thermal oxidation, an oxide film on an exposed portion of said first nonmonocrystalline silicon film; (g) forming a second nonmonocrystalline silicon film on said oxide film; and (h) forming a third insulating film on said second nonmonocrystalline silicon film.
Claim 2
Independent Claim
153 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type; (b) forming a first nonmonocrystalline silicon film on said first insulating film; (c) depositing a second insulating film on said first nonmonocrystalline silicon film under a condition that said first nonmonocrystalline silicon film is not oxidized but that an insulating film can be deposited on said first nonmonocrystalline silicon film; (d) ion-implanting an impurity in said first nonmonocrystalline silicon film through said second insulating film; (e) removing said second insulating film to expose said first nonmonocrystalline silicon film doped with the impurity; (f) forming, by thermal oxidation, an oxide film on an exposed portion of said first nonmonocrystalline silicon film; (g) forming a second nonmonocrystalline silicon film on said oxide film; and (h) forming a third insulating film on said second nonmonocrystalline silicon film.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said second insulating film is formed by chemical vapor deposition.
Claim 4
Dependent Claim
15 words
A method according to claim 1, wherein said second insulating film is formed by sputtering.
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said second insulating film is formed by a molecular beam method.
Claim 6
Dependent Claim
13 words
A method according to claim 1, wherein said impurity is phosphorus or arsenic.
Claim 7
Dependent Claim
81 words
A method according to claim 1, further including the step of sequentially removing parts of said third insulating film, said second nonmonocrystalline silicon film, said oxide film, said first nonmonocrystalline silicon film and said first insulating film to partially expose the surface of said semiconductor substrate, and doping said semiconductor substrate with an impurity having a second conductivity type opposite to the first conductivity type through said exposed surfaces of said semiconductor substrate to form semiconductor regions in said semiconductor substrate.
References Cited (Backward Citations)
No citation records indexed.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |