Patterning process using ladder-type organosiloxane resin and process for production of electronic devices utilizing said patterning process

Claim 1

A process comprising the steps of: coating a substrate with a ladder-type organosiloxane resin represented by the general formula: ##STR4## wherein: each R 1 is independently selected from alkyl groups having 1 to 6 carbon atoms, and phenyl and halophenyl groups; R 2 and R 3 are indpendently selected from alkoxy groups having 1 to 3 carbon atoms, a hydroxyl group and alkyl groups having 1 to 3 carbon atoms; R 4 and R 5 are independently selected from hydrogen and alkyl groups having 1 to 3 carbon atoms; and n is a number giving a weight average molecular weight of about 1,000 to 1,000,000 to the ladder-type organosiloxane resin, said ladder-type organosiloxane resin having a dispersivity of from about 1.5 to about 4; directly irradiating the coated organosiloxane resin with energy rays according to a desired pattern; subjecting the irradiated coated organosiloxane resin to a development treatment to remove the non-irradiated portion of the resin to form a mask of said ladder-type resin with said desired pattern; after forming said mask, heating said mask at a temperature of from 200° to 500° C. in an inert gas atmosphere, wherein said mask after said heating comprises said ladder-type resin; using said mask to etch a respective exposed part of said substrate; leaving at least a portion of said mask permanently on said substrate as an insulating layer; and heating said portion of said mask remaining as said insulating layer to a temperature of at least 450° C.; wherein said insulating layer after said heating, has said ladder-type structure and is provided with a low weight loss characteristic for a temperature of up to approximately 700° C.