US4609565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating solar cells
Assignee: Schott Solar CSP Inc
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Filing: 1984-12-13
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Granted: 1986-09-02
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Expires: 2004-12-13
Abstract
Abstract A solar cell fabrication procedure is described which is characterized by (1) removal of the front surface electrode plating mask after preliminary metallization of the front surface electrodes, (2) a passivation step which, inter alia, results in the formation of an altered silicon substrate surface layer, and (3) use of the altered surface layer as a plating mask for subsequent metallization steps involving, for example, immersion plating of nickel and immersion plating or electroplating of copper.
Inventors
- 👤 Douglas A. Yates
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:43
CPC Classifications
C; C23; C23C; C23C28/00; H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F71/00; H10F71/121; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
82 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing a silicon substrate having opposing first and second surfaces; (b) exposing selected regions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said first surface to which selected metals will only poorly adhere; and (c) metallizing said first surface exclusive of said selected regions with at least one of said selected metals.
Claim 2
Independent Claim
82 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing a silicon substrate having opposing first and second surfaces; (b) exposing selected regions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said first surface to which selected metals will only poorly adhere; and (c) metallizing said first surface exclusive of said selected regions with at least one of said selected metals.
Claim 3
Dependent Claim
22 words
The method according to claim 1 and further including the step of forming a junction in said substrate adjacent said first surface.
Claim 4
Dependent Claim
25 words
The method according to claim 1 wherein said devices are photovoltaic and further including the step of applying an anti-reflection coating to said first surface.
Claim 5
Dependent Claim
26 words
Method according to claim 1 wherein said metallization is performed using a metal chosen from the group of metals including nickel, palladium, cobalt, platinum, and rhodium.
Claim 6
Independent Claim
204 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and having a junction adjacent said first surface and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface; (b) applying a coating of aluminum to said second surface; (c) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum of said coating of aluminum to alloy with said silicon substrate; (d) applying a nickel coating to said first selected portions of said first surface; (e) removing said plating mask; (f) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; (g) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at their interface; and (h) coating said nickel and aluminum coatings with at least one layer of at least one of said conductive metals.
Claim 7
Independent Claim
204 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and having a junction adjacent said first surface and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface; (b) applying a coating of aluminum to said second surface; (c) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum of said coating of aluminum to alloy with said silicon substrate; (d) applying a nickel coating to said first selected portions of said first surface; (e) removing said plating mask; (f) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; (g) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at their interface; and (h) coating said nickel and aluminum coatings with at least one layer of at least one of said conductive metals.
Claim 8
Dependent Claim
35 words
The method according to claim 5 wherein said at least one layer is applied by (a) contacting said nickel coating with an etchant to remove unbonded nickel, and (b) overcoating said nickel coating with copper.
Claim 9
Dependent Claim
20 words
The method according to claim 5 and firther including the step of applying an anti-reflection coating to said first surface.
Claim 10
Dependent Claim
33 words
The method according to claim 5 wherein additionally the exposure of said substrate to said hydrogen ion beam is of sufficient time and intensity to decrease the minority carrier losses of said substrate.
Claim 11
Independent Claim
159 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and having a junction adjacent said first surface and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface; (b) applying a nickel coating to said first selected portions of said first surface; (c) removing said plating mask; (d) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; (e) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at their interface; and (f) coating said nickel coating with at least one additional conductive metal layer.
Claim 12
Independent Claim
159 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and having a junction adjacent said first surface and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface; (b) applying a nickel coating to said first selected portions of said first surface; (c) removing said plating mask; (d) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; (e) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at their interface; and (f) coating said nickel coating with at least one additional conductive metal layer.
Claim 13
Dependent Claim
27 words
A method according to claim 9 wherein said at least one additional conductive metal layer comprises a nickel layer that is formed by an immersion plating process.
Claim 14
Dependent Claim
20 words
A method according to claim 10 wherein said plating process utilizes a bath comprising a nickel salt and fluoride ions.
Claim 15
Dependent Claim
26 words
A method according to claim 7 wherein said at least one additional conductive metal layer comprises a layer of copper formed by immersion plating or electroplating.
Claim 16
Dependent Claim
24 words
Method according to claim 1 wherein the metallization of said first surface comprises formation of a layer of nickel by an immersion plating process.
Claim 17
Dependent Claim
19 words
Method according to claim 5 wherein step (d) comprises formation of a nickel coating by an immersion plating process.
Claim 18
Dependent Claim
12 words
Method according to claim 5 wherein said plating mask is a dielectric.
Claim 19
Dependent Claim
19 words
Method according to claim 9 wherein step (f) comprises formation of a nickel coating by an immersion plating process.
Claim 20
Independent Claim
216 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and a junction adjacent said first surface, and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface. (b) applying a coating of aluminum to said second surface; (c) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum of said coating of aluminum to alloy with said silicon substrate; (d) applying a nickel coating to said first selected portions of said first surface; (e) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at there interface; (f) removing said plating mask so as to expose said second selected portions of said first surface; (g) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; and (h) coating said nickel and aluminum coatings with at least one layer of at least one of said selected conductive metals.
Claim 21
Independent Claim
216 words
A method of fabricating solid state semiconductor devices comprising in sequence the steps of: (a) providing (1) a silicon substrate having opposing first and second surfaces and a junction adjacent said first surface, and (2) a plating mask exposing first selected portions of said first surface and covering second selected portions of said first surface. (b) applying a coating of aluminum to said second surface; (c) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum of said coating of aluminum to alloy with said silicon substrate; (d) applying a nickel coating to said first selected portions of said first surface; (e) sintering said nickel coating so that the nickel and silicon at said first selected portions react to form nickel silicide at there interface; (f) removing said plating mask so as to expose said second selected portions of said first surface; (g) exposing said second selected portions of said first surface to a hydrogen ion beam of an intensity and for a duration sufficient to form a surface layer on said second selected portions of said first surface to which selected conductive metals will only poorly adhere; and (h) coating said nickel and aluminum coatings with at least one layer of at least one of said selected conductive metals.
Claim 22
Dependent Claim
19 words
The method according to claim 17 wherein said nickel and aluminum coatings are coated with a layer of nickel.
Claim 23
Dependent Claim
20 words
The method according to claim 17 wherein said nickel and aluminum coatings are coated with layers of nickel and copper.
Claim 24
Dependent Claim
26 words
The method according to claim 17 wherein said nickel and aluminum coatings are coated with at least one layer of nickel by an immersion plating process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |