US4613888A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device of multilayer wiring structure
Assignee: Toshiba Corp
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Filing: 1984-07-24
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Granted: 1986-09-23
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Expires: 2004-07-24
Abstract
Abstract A semiconductor device is disclosed which includes a multilayer formed of a hard inorganic main insulation film and a soft subinsulation film as insulation interlayers, and a hard inorganic insulation film as a final passivation film. The final passivation film is directly deposited on the hard inorganic main insulation film of the multilayer.
Inventors
- 👤 Yasukazu Mase
- 👤 Masahiro Abe
- 👤 Masaharu Aoyama
- 👤 Takashi Ajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
132 words
A semiconductor device of a multilayer wiring structure comprising: a semiconductor substrate; a first insulation film having a predetermined pattern formed on said semiconductor substrate; a first wiring layer having a predetermined pattern formed on said first insulation film; a second insulation film having a predetermined pattern formed on said first insulation film; a third insulation film having a predetermined pattern formed on said second insulation film, said second and third insulation films having a first continuous contact hole; a second wiring layer formed on said third insulation film to fully cover said third insulation film, said second wiring layer extending into said first contact hole and contacting said first wiring layer; and a fourth insulation film formed on an entire major surface of the structure and contacting said second insulation film.
Claim 2
Dependent Claim
132 words
A semiconductor device of a multilayer wiring structure comprising: a semiconductor substrate; a first insulation film having a predetermined pattern formed on said semiconductor substrate; a first wiring layer having a predetermined pattern formed on said first insulation film; a second insulation film having a predetermined pattern formed on said first insulation film; a third insulation film having a predetermined pattern formed on said second insulation film, said second and third insulation films having a first continuous contact hole; a second wiring layer formed on said third insulation film to fully cover said third insulation film, said second wiring layer extending into said first contact hole and contacting said first wiring layer; and a fourth insulation film formed on an entire major surface of the structure and contacting said second insulation film.
Claim 3
Dependent Claim
21 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said first wiring layer is a metal layer.
Claim 4
Dependent Claim
21 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said second wiring layer is a metal layer.
Claim 5
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said fourth insulation film is a final passivation film.
Claim 6
Dependent Claim
20 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said second insulation film is an interlayer.
Claim 7
Dependent Claim
20 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said third insulation film is an interlayer.
Claim 8
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said third insulation film is an inorganic resin film.
Claim 9
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 1, wherein said fourth insulation film is an inorganic resin film.
Claim 10
Dependent Claim
159 words
A semiconductor device of a multilayer wiring structure comprising: a semiconductor substrate; a first insulation film having a predetermined pattern formed on said semiconductor substrate; a first wiring layer having a predetermined pattern formed on said first insulation film; a second insulation film having a predetermined pattern formed on said first insulation film; a third insulation film having a predetermined pattern formed on said second insulation film, said third insulation film having a section from which a damaged portion has been removed and said second and third insulation films having a first continuous contact hole; a second wiring layer formed on said third insulation film, except at said section, to fully cover said third insulation film except at said section, said second wiring layer extending into said first contact hole and contacting said first wiring layer; and a fourth insulation film formed on an entire major surface of the structure and contacting said section of said third insulation film.
Claim 11
Dependent Claim
159 words
A semiconductor device of a multilayer wiring structure comprising: a semiconductor substrate; a first insulation film having a predetermined pattern formed on said semiconductor substrate; a first wiring layer having a predetermined pattern formed on said first insulation film; a second insulation film having a predetermined pattern formed on said first insulation film; a third insulation film having a predetermined pattern formed on said second insulation film, said third insulation film having a section from which a damaged portion has been removed and said second and third insulation films having a first continuous contact hole; a second wiring layer formed on said third insulation film, except at said section, to fully cover said third insulation film except at said section, said second wiring layer extending into said first contact hole and contacting said first wiring layer; and a fourth insulation film formed on an entire major surface of the structure and contacting said section of said third insulation film.
Claim 12
Dependent Claim
21 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said first wiring layer is a metal layer.
Claim 13
Dependent Claim
21 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said second wiring layer is a metal layer.
Claim 14
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said fourth insulation film is a final passivation film.
Claim 15
Dependent Claim
20 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said second insulation film is an interlayer.
Claim 16
Dependent Claim
20 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said third insulation film is an interlayer.
Claim 17
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said third insulation film is an inorganic resin film.
Claim 18
Dependent Claim
22 words
A semiconductor device of a multilayer wiring structure according to claim 9, wherein said fourth insulation film is an inorganic resin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-09-22 | 1990-03-24 | 1990-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-22 | 1994-03-24 | 1994-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-22 | 1998-03-24 | 1998-09-23 | $7700.00 | Window Closed / Lapsed |