US4617079A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching system
Assignee: Lam Research Corp
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Filing: 1985-04-12
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Granted: 1986-10-14
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Expires: 2005-04-12
Abstract
Abstract A relatively small amount of high frequency RF power is mixed with a predominantly low frequency RF power to provide an improved etch rate uniformity of a semiconductor wafer in a low frequency plasma etching system.
Inventors
- 👤 David H. Tracy
- 👤 Brian G. Balistee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:00
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32174; H01J37/32137; H01J37/32155; H01J37/32165; H01J37/32431; H01J37/32532; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
141 words
In combination with a plasma etching process including a planar reactor for producing plasma gas therein and a pair of electrodes with one of the electrodes disposed to receive thereon a wafer to be etched, a source of power connected across said pair of electrodes comprising: (a) a source of relatively low radio frequency signals having a predetermined output power for providing the main source of energy for etching said wafer; (b) a source of relatively high radio frequency signals having a predetermined output power substantially lower than said source of said relatively low radio frequency signals; (c) a combining circuit; (d) means for applying said low radio frequency signals and said high radio frequency signals to said combining circuit; and (e) means for applying the combined high and low radio frequency signals from combining circuit across said pair of electrodes.
Claim 2
Dependent Claim
141 words
In combination with a plasma etching process including a planar reactor for producing plasma gas therein and a pair of electrodes with one of the electrodes disposed to receive thereon a wafer to be etched, a source of power connected across said pair of electrodes comprising: (a) a source of relatively low radio frequency signals having a predetermined output power for providing the main source of energy for etching said wafer; (b) a source of relatively high radio frequency signals having a predetermined output power substantially lower than said source of said relatively low radio frequency signals; (c) a combining circuit; (d) means for applying said low radio frequency signals and said high radio frequency signals to said combining circuit; and (e) means for applying the combined high and low radio frequency signals from combining circuit across said pair of electrodes.
Claim 3
Dependent Claim
27 words
The invention as set forth in claim 1 wherein said combining circuit includes means for isolating said sources of high and low frequency signals from each other.
Claim 4
Dependent Claim
49 words
The invention as set forth in claim 2 wherein said combining circuit further comprises a radio frequency trap tuned to the frequency of the high frequency signals from said high frequency source to prevent said high frequency signals from being fed back into said source of low frequency signals.
Claim 5
Dependent Claim
36 words
The invention as set forth in claim 3 wherein said combining circuit further comprises capacitive means to prevent the low frequency signals passing through said radio frequency trap from reaching said source of high frequency signals.
Claim 6
Dependent Claim
53 words
The invention as set forth in claim 4 wherein said combining circuit further comprises a match network providing an impedance transformation to minimize high frequency power from being reflected back to said source of high frequency signals while plasma is being generated in said planar reactor by said source of low frequency signals.
Claim 7
Dependent Claim
43 words
The invention as set forth in claim 5 wherein said match network further comprises an impedance which changes when plasma is not being generated in said planar reactor and said high frequency source is not matched to a load including said planar reactor.
Claim 8
Dependent Claim
20 words
The invention as set forth in claim 6 wherein the frequency of said low frequency signals is approximately 400 kHz.
Claim 9
Dependent Claim
20 words
The invention as set forth in claim 7 wherein the frequency of said high frequency signals is about 27 MHz.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-13 | 1990-04-14 | 1990-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-13 | 1994-04-14 | 1994-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-13 | 1998-04-14 | 1998-10-14 | $7700.00 | Window Closed / Lapsed |